近期论文

“Fundamental band gap and direct-indirect crossover in Ge1-x-ySixSny alloys ” J.D. Gallagher, Chi Xu, Liying Jiang, John Kouvetakis and José Menéndez, submitted, Applied Physics Letters .r
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“Electrical characterization studies of p-type Ge, Ge1-ySny, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates”Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Richard T. Beeler, John Kouvetakis, submitted, Current Applied Physics.r
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“Rational design of mono-crystalline Ge5-2y(InP)y/Ge/Si(100) semiconductors: Synthesis and fundamental properties”P. E. Sims, A.V.G. Chizmeshya, L. Jiang, R.T. Beeler, C. D. Poweleit, J. Gallagher, D. J. Smith, J. Menéndez and J. Kouvetakis, Journal of the American Chemical Society135(33), 12388-12399 (2013).r
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“Optical properties of Ge1-x-ySixSny alloys with y > x: direct band gaps beyond 1550 nm” Chi Xu, Liying Jiang, J. Kouvetakis and J. Menendez, Applied Physics Letters 103, 072111, 1-4 (2013).r
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“Synthetic routes and optical properties of Sn-rich Ge1-x-ySixSny alloys: tunable direct-gap photoluminescence beyond 1.55 um” Chi Xu, Richard T. Beeler, Liying Jiang, James Gallagher, Ruben Favaro, José Menéndez and John Kouvetakis, in press, Thin Solid Films.r
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“Bandpap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices” Richard T. Beeler, James Gallagher, Chi Xu, Liying Jiang, Charutha Senaratne, David J. Smith, José Menéndez, A.V.G. Chizmeshya, and John Kouvetakis, ECS Journal of Solid State Science and Technology 2(9), Q172-Q177 (2013).r
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“Fundamental experimental and theoretical aspects of high-order Ge-hydride chemistry for versatile low-temperature Ge-based materials fabrication”G. Grzybowski, A.V.G. Chizmeshya, C. Senaratne, J. Menendez and J. Kouvetakis, Journal of Materials Chemistry C: Materials for Optical and Electronic Devices 1(34), 5223-5234.r
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“Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content ” Mee-Yi Ryu, Tom R. Harris, Y.K. Yeo, R.T. Beeler and J. Kouvetakis, Applied Physics Letters 102, 171908 (2013).r
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“New Strategies for Ge on Si materials and devices: Fabrication based on non conventional hydride chemistries: The tetragermane case” Chi Xu, R.T. Beeler, Liying Jiang, G. Grzybowski, A.V.G. Chizmeshya, J. Menéndez and J. Kouvetakis, Semiconductor Science and Technology 28, 105001 (2013).r
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“Nanoscale assembly of Silicon like Al(As1-xNx)ySi5-2y alloys: Fundamental theoretical and experimental studies of structural and optical properties” L. Jiang, P. E. Sims, R. T. Beeler, G. Gryzbowski, A.V.G. Chizmeshya, D.J. Smith, J. Kouvetakis, and J. Menéndez, Physical Review B 88, 045208, 1-10, (2013).r
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“Molecular synthesis of high-performance near-IR photodetectors with independently tunable structural and optical properties based on Si-Ge-Sn” Chi Xu, R.T. Beeler G. Grzybowski, A.V.G Chizmeshya J. Menendez and J. Kouvetakis Journal of the American Chemical Society 134(51), 20756-20767 (2012).r
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