个人简历

西安交通大学 电子科学与技术 学士
香港科技大学 电子及计算机工程 博士
麦吉尔大学 物理系 访问学者
香港科技大学 电子及计算机工程 研究助理教授 (至2017.12)
深圳大学 电子科学与技术 副教授 (至2020.03)
目前开展的课题包括先进工艺节点CMOS器件建模、新型低功耗器件如隧穿晶体管、铁电负电容晶体管、电路模拟器的动态时间演进算法/模型降阶算法等。
IEEE Senior Member, IEEE EDS Technical Committee Member (Compact Modeling), 国际会议IEEE EDTM 技术委员会成员/分会主席，IEEE JEDS 客座编辑(2018)。获得IEEE EDSSC最佳论文奖(2019)、William Mong纳米科学与技术杰出论文奖(2012)等。指导学生获得IEEE EDSSC最佳学生论文奖(2018)。
近年来取得的主要成果：
专著/章节：
[1] Lining Zhang and Mansun Chan, Book Editors, Tunneling Field-Effect Transistor Technology, Springer, 2016
[2] Lining Zhang, Jun Huang, Mansun Chan, “Steep Slope Devices and TFETs,” Chapter 1 of Tunneling Field Effect Transistor Technology, Springer, 2016, pp. 1-31.

博士后招收：
诚招相关方向的博士后进行合作研究。详见学院网站的招聘启事。
对计划招收研究生的基本要求:
1、专业范围： 微电子，物理，数学，计算机；
2、乐观、主观能动性、对解决工程问题有好奇心、有团队合作精神

研究领域

研究方向：电子设计自动化EDA、微纳器件物理及建模、神经形态计算用器件。"主要研究领域为新型半导体器件理论和电路应用，涉及微纳尺度半导体器件的物理、器件模型和电路模拟方法、器件和电路的可靠性、神经形态电路的电子设计自动化。"

近期论文

代表性期刊文章：
[1] Z. Rong, W. Cai, Y. Zhang, P. Wu, X. Li, Lining Zhang*, “On the enhanced Miller capacitance of source- gated thin film transistors,” IEEE Electron Device Letter, to appear. [一作为本科生]
[2] Z. Ahmed, Q. Shi, Z. Ma, Lining Zhang*, H. Guo, M. Chan, “Analytical Monolayer MoS2 MOSFET Modeling Verified by First Principle Simulations,” IEEE Electron Device Letter, vol. 41, no. 1, pp. 171-174, Jan. 2020
[3] Lining Zhang*, C. Ma, Y. Xiao, H. Zhang, X. Lin, M. Chan, “A dynamic time evolution method for concurrent device-circuit aging simulations,” IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 184-190, Jan. 2019
[4] Lining Zhang*, D. Song, Y. Xiao, X. Lin, M. Chan, “On the formulation of self-heating models for circuit simulations,” Journal of Electronic Device Society, vol. 6, no. 1, pp. 291-297, Feb. 2018
[5] Lining Zhang*, Mansun Chan, “SPICE Modeling of Double-Gate Tunnel-FETs Including Channel Transports,” IEEE Trans. on Electron Devices, vol. 61, no. 2, pp. 300-307, Feb. 2014
代表性会议文章：
[1] Qing Shi, Lining Zhang*, Yu Zhu, Lei Liu, Mansun Chan, Hong Guo, “Atomic disorder scattering in emerging transistors by parameter-free first principle modeling,’ 2014 IEEE International Electron Device Meeting (IEDM), Dec. 15-17, 2014, San Francisco, USA
[2] Lining Zhang*, Jin He and Mansun Chan, “A Compact Model for Double-Gate Tunneling Field-Effect-Transistors and Its Implications on Circuit Behaviors”, 2012 IEEE International Electron Device Meeting (IEDM), Dec. 10-12, 2012, San Francisco, USA
[3] H. Hu, Lining Zhang, X. Lin, M. Chan, “Modeling the heating effects in PCM for circuit simulation accelerations,” IEEE Conference on Electron Devices and Solid-State Circuits, June.12-14, 2019, Xi’an, China [Best Paper Award]
[4] D. Song, Lining Zhang*, D. Liu, H. Zhang, X. Lin, “An improvement of BSIM for fast circuit simulations,” IEEE Conference on Electron Devices and Solid-State Circuits, June.6-8, 2018, Shenzhen, China [Best Student Paper Award]
[5] P. Wu, C. Ma, Lining Zhang*, X. Lin, M. Chan, “Investigation of nitrogen enhanced NBTI effect using the universal prediction model,” 2015 International Reliability Physics Symposium, Apr. 19 –23, Monterey, USA