个人简历

张盛东，信息工程学院执行院长。获北京大学微电子学系理学博士学位、东南大学电子工程系工学硕士和工学学士学位。博士论文获全国优秀博士学位论文奖。从1984年起分别在原航空部625研究所、原电子部55研究所和香港科技大学等海内外若干大型科研机构从事研究开发工作十余年。2002年8月加入北京大学信息科学技术学院微电子学系。现任北京大学信息工程学院执行院长。
张盛东教授获东南大学半导体物理与器件专业工学学士、东南大学半导体与微电子专业工学硕士、北京大学微电子学与固体电子学专业理学博士。自参加工作以来，一直工作在我国半导体与微电子领域科研和教学的第一线。上世纪80和90年代在国内大型科研机构和香港科技大学从事科学研究和工程技术开发工作。2002年加入北京大学信息科学技术学院，2009年1月被派至北京大学深圳研究生院工作至今。迄今已发表学术论文近300篇，大多为第一或通讯作者。其中，在国际权威学术刊物Advanced Materials，Advanced Functional Materials, Nanoscale, Advanced Electronic Materials, ACS Applied Material & Interfaces,Applied Physics Letters, IEEE Journal / Transactions / Letters上发表论文近100篇。迄今获授权的中外发明专利118件（美国10件），大多为第一发明人。部分专利已转让中芯国际、京东方、华星光电、龙腾光电等大中型半导体与显示企业并形成规模量产。曾获国家技术发明二等奖、北京市科学技术一等奖、广东省科学技术二等奖和深圳市技术发明一等奖等奖项，以及获国务院政府特殊津贴专家和深圳市国家级高层次领军人才等称号。

研究领域

研究方向：集成电路设计、薄膜晶体管器件、有源阵列显示、柔性显示等。"目前从事的主要研究领域为集成电路设计、薄膜晶体管器件、有源阵列显示、柔性显示等。"

近期论文

(1)Huiling Lu, Xiaoliang Zhou, Ting Liang, Letao Zhang, and Shengdong Zhang, “Nonlinear photocurrent-intensity behavior of amorphous InZnO thin film transistors”, Applied Physics Letters, no. 4, vol. 112, 042103, 2018. (2)Junchen Dong, Huijin Li, Dedong Han, Wen Yu, Zhen Luo, Yi Liang, Shengdong Zhang, Xing Zhang, and Yi Wang, “Investigation of c-axis-aligned crystalline gadolinium doped aluminum-zinc-oxide films sputtered at room-temperature”, Applied Physics Letters, vol. 112, 012104, 2018. (3)Huijin Li, Dedong Han, Junchen Dong, WenYu, Yi Liang, Zhen Luo, Shengdong Zhang, Xing Zhang, Yi Wang, “Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition”, Applied Surface Science, 2018. (4)Xiang Xiao, Letao Zhang, Yang Shao, Xiaoliang Zhou, Hongyu He, and Shengdong Zhang, “Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor”, ACS Appl. Mater. Interfaces, December 13, 2017. (5)Huiling Lu, Xiaoliang Zhou, Ting Liang, Xiaobin Bi, Letao Zhang, and Shengdong Zhang, “Oxide Thin-Film Transistors with IMO and IGZO Stacked Active Layers for UV Detection”, IEEE Journal of the Electron Devices Society. Vol. 5,no. 6,pp. 504-508, 2017. (6)Hongyu He, Yuan Liu, Binghui Yan, Xinnan Lin, Xueren Zheng and Shengdong Zhang, “Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistoat Different Temperatures Considering Both Deep and Tail Trap States”, IEEE Trans. on Electron Devices, vol. 64, no. 9, pp. 3654 – 3660, 2017. (7)Xiaoliang Zhou, Yang Shao, Letao Zhang, Huiling Lu, Hongyu He, Dedong Han, Yi Wang, and Shengdong Zhang, “Oxygen Interstitial Creation in a-IGZO Thin-Film Transistors under Positive Gate-Bias Stress”, IEEE Electron Device Letters, vol. 38, no. 9, pp. 1252-1255, 2017. (8)Yizhe Sun, Yibin Jiang, Huiren Peng, Jiangliu Wei, Shengdong Zhang* and Shuming Chen, “Efficient quantum dot light-emitting diodes with a Zn0.85Mg0.15O interfacial modification layer”, Nanoscale, vol. 9, no. 26, pp. 8893–9248, 2017. (9)Letao Zhang, Xiaoliang Zhou, Baozhu Chang, Longyan Wang, Yuxiang Xiao, Hongyu He, and Shengdong Zhang, “Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer”, Materials Science in Semiconductor Processing, 68 (2017) 147–151. (10)Longyan Wang, Yin Sun, Xintong Zhang, Lining Zhang, Shengdong Zhang and Mansun Chan,“Tunneling Contact IGZO TFTs with Reduced Saturation Voltages”, Applied Physics Letters, vol. 110, 152105, 2017. (11)Wen Yu, Dedong Han, Junchen Dong, Yingying Cong, Guodong Cui, Yi Wang, Shengdong Zhang, “AZO Thin Film Transistor Performance Enhancement by Capping an Aluminum Layer”, IEEE Trans. on Electron Devices, vol. 64, no. 5, pp. 2228 - 2232, 2017. (12)Xiaoliang Zhou, Yang Shao, Letao Zhang, Xiang Xiao, Dedong Han, Yi Wang, and Shengdong Zhang, “Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors”, IEEE Electron Device Letters, vol. 38, no. 4, pp. 465 - 468, 2017. (13)Letao Zhang, Xiaoliang Zhou, Huan Yang, Hongyu He, Longyan Wang, Min Zhang, and Shengdong Zhang, “Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors”, IEEE Electron Device Letters, vol. 38, no. 2, pp. 213 - 216, 2017. (14)Yingying Cong, Dedong Han, Junchen Dong, Shengdong Zhang, Xing Zhang, and Yi Wang, “Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate”, SCIENTIFIC REPORTS Volume: 7 Article Number: 1497Published: MAY 4 2017. (15)Songnan Du, Gongtan Li, Xuhong Cao, Yan Wang, Huiling Lu, Shengdong Zhang, Chuan Liu and Hang Zhou, “Oxide Semiconductor Phototransistor with Organolead Trihalide Perovskite Light Absorber”, Advanced Electronic Materials, Vol. 3, Issue 4, Version of Record online: 24 FEB 2017. (16)Guodong Cui, Dedong Han, Junchen Dong, Yingying Cong, Xiaomi Zhang, Huijin Li, Wen Yu, Shengdong Zhang, Xing Zhang and Yi Wang, “Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition”, Japanese Journal of Applied Physics, Volume 56, Number 4S, 04CG03, 2017. (17)Yan Wang, Raymond Fullon, Muharrem Acerce, Christopher E. Petoukhoff, Jieun Yang, Chenggan Chen, Songnan Du, Sin Ki Lai, Shu Ping Lau, Damien Voiry, Deirdre O’Carroll, Gautam Gupta, Aditya D. Mohite, Shengdong Zhang, Hang Zhou, and Manish Chhowalla, “Solution-Processed MoS2/Organolead Trihalide Perovskite Photodetectors”, Advanced Materials, Vol. 29, no. 4, Jan. 25, 2017. (18)Huijin Li, Dedong Han, Liqiao Liu, Junchen Dong, Guodong Cui, Shengdong Zhang, Xing Zhang and Yi Wang, “Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique”, Nanoscale Research Letters, vol. 12, Article Number: 223, Published: MAR 24 2017. (19)Guodong Cui, Dedong Han, Yingying Cong, Junchen Dong, Wen Yu, Shengdong Zhang, Xing Zhang, Yi Wang, “High-Performance Ti-Doped Zinc Oxide TFTs With Double-Layer Gate Dielectric Fabricated at Low Temperature”, IEEE Electron Device Letters, vol. 38, no. 2, pp. 207 - 20, 2017. (20)Hongyu He, Yuan Liu, Binghui Yan, Xinnan Lin, Xueren Zheng, and Shengdong Zhang, “Analytical Drain Current Model for Organic Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States”, IEEE Trans. on Electron Devices, vol. 63, no. 10, pp. 4423 - 4431, 2016.