个人简历

康晋锋，北京大学信息学院教授，北京大学上海微电子研究院副院长，IEEE Transactions on Electron Devices期刊编辑（Editor）。1984年毕业于大连工学院物理系获理学学士；分别于1992和1995年获在北京大学理学硕士和理学博士学位；1996年至1997年，在北京大学微电子所从事博士后研究工作；1997开始在北京大学微电子所任副教授，2001年8月开始任教授。2002年至2003年受邀以访问教授身份在新加坡国立大学半导体纳米器件实验室（SNDL）从事合作研究一年。

研究领域

智能化信息获取与存储处理技术（包括类脑计算与存储计算一体化器件与硬件架构实现技术）、新型纳米器件与系统设计与应用技术、新型存储器（RRAM）技术与应用、高K/金属栅技术等

近期论文

1. J.F. Kang, B. Gao, P. Huang, Z. Chen, Y.D. Zhao, C. Liu, H.T. Li, X.Y. Liu, “Oxide-based RRAM: Requirements and Challenges of Modeling and Simulation”, 2015 IEEE International Electron Devices Meeting (IEDM2015), December 7-9, 2015, Washington, DC, USA (Invited Talk) 2. J.F. Kang, B. Gao, P. Huang, Z. Chen, Y.D. Zhao, C. Liu, R.Z. Han, L.F. Liu, X.Y. Liu, Y.Y. Wang, “Physical Understanding and Optimization of Resistive Switching Characteristics in Oxide-ReRAM”, 46th European Solid-State Device Research Conference (ESSDERC/ESSCIRC 2016), pp.154-9 (Lausanne, Switzerland, September 12-15, 2016) (Invited Talk) 3. J.F. Kang, P. Huang, Y.D. Zhao, R.Z. Han, Z. Chen, C. Liu, L.F. Liu, and X.Y. Liu, “RRAM-based Cross-bar Arrays: Towards A Novel Data Processing Architectures”, International Conference Electronic Materials and Nanotechnology for Green Environment 2016 (ENGE 2016), November 6-9, 2016, Jeju, South Korea (Invited Talk) 4. J.F. Kang, B. Gao, Z. Chen, Y.D. Zhao, W.J. Ma, Z. Zhou, H.F. Ye, L.F. Liu, X.Y. Liu, “TMO-ReRAM based synaptic device for neuromorphic computing”, 2015 International Conference on Solid State Devices and Materials (SSDM2015), Sep. 27-30, 2015, Sapporo, Japan (Invited Talk) 5. J.F. Kang, B. Gao, P. Huang, Z. Chen, L.F. Liu, X.Y. Liu, S.M. Yu, H.-S. Philip Wong, “Design and Optimization of TMO-ReRAM based Synaptic Devices”, SPICE-Workshop on Bad Metal Behavior in Mott Systems, June 29-July 2, 2015, Schlo? Waldthausen, Mainz, Germany (Invited Talk) 6. J.F. Kang, B. Gao, P. Huang, Z. Chen, Y.D. Zhao, C. Liu, H.T. Li. F.F. Zhang, L.F. Liu, X.Y. Liu, “Design and Optimization of Transition Metal Oxide-based Resistive Switching Devices for Data Storage and Computing Systems”, 2015 MRS Spring Meeting, April 6-10, 2015, San Francisco, California, USA (Invited Talk) 7. J.F. Kang, H. T. Li, P. Huang, Z. Chen, B. Gao, X. Y. Liu, Z. Z. Jiang, and H.-S. P. Wong,“Modeling and Design Optimization of ReRAM”, 20TH ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE (ASP-DAC 2015), pp.576-581 (Makuhari, Japan, January 19th - 22th, 2015) (Invited Talk) 8. J.F. Kang, B. Gao, P. Huang, L.F. Liu, X.Y. Liu, H.Y. Yu, S. Yu, H.-S. P. Wong, “RRAM based Synaptic Devices for Neuromorphic Visual Systems”, 2015 IEEE INTERNATIONAL CONFERENCE ON DIGITAL SIGNAL PROCESSING (DSP), pp.1219-1222 (SINGAPORE, JUL 21-24, 2015) (Invited Talk) 9. J.F. Kang, B. Gao, Y.J. Bi, B. Chen, X.Y. Liu, S.M. Yu, H-Y. Chen, H.-S. Philip, Wong, “TMO-based Memoristive Devices and Aplication for Neuromorphic Systems”, CIMTEC 2014, June.16-19, 2014, Montecatini Terme, Italy (Invited Talk) 10. J. F. Kang, B. Gao, B. Chen, P. Huang, F. F. Zhang, X. Y. Liu, H.-Y. Chen, Z. Jiang, H.-S. P. Wong, and Shimeng Yu, Scaling and Operation Characteristics of HfOx based Vertical RRAM for 3D Cross- Point Architecture, 2014 IEEE International Symposium on Circuits and Systems (ISCAS2014), June 1-5, 2014, Melbourne, Australian, p.417 (Invited Talk) 11. J.F. Kang, Bin Gao, Bing Chen, Peng Huang and Xiaoyan Liu, “Modeling of Transition Metal Oxide Based RRAM Devices”, International Conference on Solid State Devices and Materials (SSDM2013), Sept. 24-27, 2013, Fukuoka, Japan (Invited Talk) 12. J.F. Kang, B. Gao, B. Chen, P. Huang, F.F. Zhang, X.Y. Liu, “Fundamental RRAM Mechanism and Potential Paths to High Density of RRAM Array”, Varian Semiconductor’s “Future Team” Meeting”, April 30, 2013, Gloucester, Massachusetts, USA (Invited Talk) 13. J. F. Kang, “Oxide-Based RRAM-Unified Physical Mechanism and Implementation for Cell Design Optimization”, 1st International Workshop on Resistive RAM, October 20th -21st, 2011, Leuven, Belgium (Invited Talk) 14. J.F. Kang, B. Gao, B. Chen, F.F. Zhang, L.F. Liu, X.Y. Liu, “Material-Oriented Methodology for High Performance TMO-based RRAM”, (IUMRS-ICA 2011), 19-22 Sept. 2011, Taipei (Invited Talk) 15. P. Huang, J.F. Kang*, Y.D. Zhao, S.J. Chen, R.Z. Han, Z. Zhou, Z. Chen, W.J. Ma, M. Li, L.F. Liu, and X.Y. Liu, “Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits”, Adv. Mater. 2016, Vol.28, pp.9758-9764 16. Y.D. Zhao, J. J. Hu, P. Huang, F. Yuan, Y. Chai, X. Y. Liu, and J. F. Kang*, “A Physics-Based Compact Model for Material- and Operation-Oriented Switching Behaviors of CBRAM” Tech. Dig of IEDM2016, p.188 17. Y.D. Zhao, P. Huang, Z. Chen, C. Liu, C, H.T. Li, B. Chen, W.J. Ma, F.F. Zhang, B. Gao,X.Y. Liu, J.F. Kang*, “Modeling and Optimization of Bilayered TaOx RRAM Based on Defect Evolution and Phase Transition Effects”, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 63(4), pp.1524-1532, APR 2016 18. Y.D. Zhao, P. Huang*, Z.H. Guo, Z.Y. Lun, B. Gao, X.Y. Liu, J.F. Kang*, ”Atomic Monte-Carlo Simulation for CBRAM with Various Filament Geometries”, 2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD2016) (Nuremberg, GERMANY, SEP 06-08, 2016), pp. 153-156, 2016 19. Z. Chen, B. Gao, Z. Zhou, P. Huang, H.T. Li, W.J. Ma, D.B. Zhou, L.F. Liu, X.Y. Liu, J.F. Kang*, H.Y. Chen, “Optimized Learning Scheme for Grayscale Image Recognition in a RRAM Based Analog Neuromorphic System”, Tech. Dig of IEDM2015, p.467; 20. H. Li, Z. Jiang, P. Huang, Y. Wu, H.-Y. Chen, B. Gao, X. Liu, J.F. Kang* and H.-S. P. Wong*, “Variation-aware, reliability-emphasized design and optimization of RRAM using SPICE model,” Design, Automation & Test in Europe (DATE), pp. 1425-1430, March 9-13, 2015 (Grenoble, France)