个人简历

教育经历 1991-1995年，南京大学，物理系，大学/本科，张荣 1995-2000年，南京大学，物理系，研究生/博士，郑有炓 工作经历 2000-2002年，北京大学，凝聚态物理博士后流动站，博士后 2001-2002年，上海蓝光科技有限公司，LED芯片部，高级工程师 2002-2004年，北京大学，物理学院凝聚态物理研究所，讲师 2004至今，北京大学，物理学院凝聚态物理研究所，副教授 2005年2月，比利时鲁汶大学，高能粒子研究所，短期访问学者 2009年8月-2010年8月，英国Strathclyde大学，光电子研究所，访问学者

研究领域

主要研究方向III族氮化物器件物理，包含GaN基垂直结构 LED；GaN基微纳米出光结构；GaN基微纳米器件；调节生物节律的LED光源等等。近年来，作为负责人多次承担国家 863，973和自然科学基金课题。

近期论文

Resonant absorption and scattering suppression of localized surface plasmons in Ag particles on green LED Shuang Jiang, Zhe Hu, Zhizhong Chen,* Xingxing Fu, Xianzhe Jiang, Qianqian Jiao, Tongjun Yu, and Guoyi Zhang, OPTICS EXPRESS, Vol. 21, No. 10, 12100( 2013) GaN based substrates and optoelectronic materials and devices ZHANG GuoYi1,2, SHEN Bo1,2, CHEN ZhiZhong1,2*, HU XiaoDong1,2, QIN ZhiXin1,2, WANG XinQiang1,2, WU JieJun1,2, YU TongJun1,2, KANG XiangNing1,2, FU XingXing1,2, YANG Wei1,2, YANG ZhiJian1,2 & GAN ZhiZhao1,2 Chinese Science Bulletin（2013，已接受） Quasi- homoepitaxial GaN-based blue light emitting diode on thick GaN template J.Z.Li, Y.B.Tao, Z.Z.Chen*, X.Z.Jiang, X.X.Fu, S.Jiang, Q.Q.Jiao, T.J.Yu and G.Y.Zhang. Chinese Physics B，（2013，已接受） Morphology evolution of MOCVD grown GaN epitaxial layers on nanoPSS Xianzhe Jiang, Zhizhong Chen*, Junze Li, Shuang Jiang, Xiangning Kang, and Guoyi Zhang. Physica Status Solidi, (2013, be accepted) Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on NanoPSS Xianzhe Jiang, Zhizhong Chen*, Junze Li, Shuang Jiang, Xiangning Kang and Guoyi Zhang. 10th International Conference on Nitride Semiconductors (ICNS-10)， AP2.17(2013) Fabrication Characterization and Comparison of GaN Nanorods by both Selective Area MOVPE Growth and Etching Shunfeng Li,*, Qianqian Jiao, Zhizhong Chen, Xue Wang, Soenke Fuending, Milena Erenburg, Jiandong Wei, Hergo-Heinrich Wehmann, Andreas Waag and Guoyi Zhang 10th International Conference on Nitride Semiconductors (ICNS-10)， BP2.19(2013) Crystal Quality Improvement of GaN Coalesced Using Nano-PSS with Void-Embedded Nanostructure by MOVPE JunZe Lee, Zhizhong Chen, Xianzhe Jiang, Zhe Hu, Xiangning Kang, and GuoYi Zhang; 10th International Conference on Nitride Semiconductors (ICNS-10)， AP3.10(2013) Emission enhancement of green LED through coupling with localized surface plasmon in Ag hexagonal arrays by nanoimprint S. Jiang, Z.Z. Chen*, Z. Hu, X.X. Fu, X. Z. Jiang, Q.Q. Jiao, J. Z. Li, T.J. Yu, Y. Gu, G.Y. Zhang. APWS-2013, (oral, Taiwan, China） Wafer-scale Photonic Crystals fabrication on GaN-based LED Using Nanoimprint Lithography with Anodic Aluminum Oxide Template Xianzhe Jiang , Xingxing Fu, Zhizhong Chen*, Bei Zhang, Xiangning Kang, Shuang Jiang, Tongjun Yu, and Guoyi Zhang. APWS-2013, (oral, Taiwan, China） The remarkable performances of GaN based blue micron-scale LED with the reduction of Size Q.Q.Jiao, S.Y.Wang, ZZ.Chen*, Y.B.Tao, S.Jiang, X.X.Fu, X.Z.Jiang,T.J.Yu, J.J.Wu,G.Y.Zhang. APWS-2013, (oral, Taiwan, China) Modeling of InGaN/GaN MQWs LED with wells sandwiched by symmetrical thin low indium-InGaN layers Junze Li, Zhizhong Chen*, Xianzhe Jiang, Zhe Hu, Xiangning Kang and Guoyi Zhang. APWS-2013, (oral, Taiwan, China） Patterned Growth of GaN Rods and Core-shell LED Structure by MOVPE Shunfeng Li, Zhizhong Chen, Xue Wang, Soenke Fuending, Milena Erenburg, Jiandong Wei, Hergo-Heinrich Wehmann, Andreas Waag and Guoyi Zhang. APWS-2013, (oral, Taiwan, China） Size effect on radiative recombination of nanorod light emitting diode by focused ion beam etching Zhizhong Chen, Shunfeng Li, Qianqian Jiao, Shuang Jiang, Xianzhe Jiang, Junze Li and Guoyi Zhang. Sino-German symposium of Nano-X Fundmental instruments and research on Novel Nanodevices (Suzhou, oral, 2013) Fabrication and Characterization of GaN nanorods and nano LED by top-down and bottom-up Shunfeng Li,, Zhizhong Chen , Xue Wang, Soenke Fuending, Milena Erenburg, Jiandong Wei, Hergo-Heinrich Wehmann, Andreas Waag and Guoyi Zhang. Sino-German symposium of Nano-X Fundmental instruments and research on Novel Nanodevices (Suzhou, oral, 2013) Wafer-scale photonic crystals fabrication using anodic alumina oxide template and nanoimprint lithography X. X. Fu, Z. Z. Chen*, B. Zhang, X. Z. Jiang, C. Y. Jia, S. Jiang, D. Li, X. N. Kang, T. J. Yu, and G. Y. Zhang. IWN-2012, Oct. Japan, (oral) Changing oblique angles of pyramid facets fabricated by wet etching of N polar GaN Feng Yu, Zhizhong Chen, Shengli Qi,Suyuan Wang, Shuang Jiang, Xingxing Fu, Xianzhe Jiang,Tongjun Yu, Zhixin Qin, Xiangning Kang, Jiejun Wu and Guoyi Zhang. Cryst. Eng. Comm.,14， 4781（2012） Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes Pengfei Tian, Erdan Gu, Zhizhong Chen et al. Appl. Phys. Lett. 101, 231110 (2012) Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging E. Y. Xie, Z. Z. Chen, P. R. Edwards, Z. Gong, N. Y. Liu et al. J. Appl. Phys. 112, 013107 (2012); Size effect on efficiency droop of blue light emitting diode* Y.B.Tao, S.Y.Wang, Z.Z.Chen*, Phys. Status Solidi C 9, No. 3–4, 616–619 (2012) Formation of low-resistance and thermally stable Ohmic contacts to LLO prepared N-polar n-GaN * Junjing Deng, Zhizhong Chen*, Suyuan Wang, Feng Yu, Tongjun Yu, Guoyi Zhang. Phys. Status Solidi C 9, No. 3–4, 527–529 (2012)