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赵静
2023-05-06 11:53
  • 赵静
  • 赵静 - 副教授-北京理工大学-机电学院-个人资料

近期热点

资料介绍

个人简历


教育背景
2010.09-2016.06 中国科学院物理研究所 凝聚态物理学 理学博士
工作经历
2016.07-2018.12 中国科学院北京纳米能源与系统研究所 助理研究员
2019.01至今 北京理工大学机电学院 副教授

研究领域


二维材料柔性电子学器件"专利:一种基于纳米石墨烯隧穿效应的人造皮肤。专利号:ZL 2012 1 0574577.4"

近期论文


1. J. Zhao, Z. Wei, Q. Zhang, H. Yu, S. Wang, X. Yang, S. Qin, G. Zhang, Q. Sun and Z. L. Wang, Static and Dynamic Piezopotential Modulation in Piezo-Electret Gated MoS2 Field-Effect Transistor. ACS Nano 2018, DOI:10.1021/acsnano.8b07477.(SCI,影响因子:13.7,top,一区)
2. J. Zhao, N. Li, H. Yu, Z. Wei, M. Z. Liao, P. Chen, S. P. Wang, D. X. Shi, Q. J. Sun, G. Y. Zhang, Highly Sensitive MoS2 Humidity Sensors Array for Non-contact Sensation. Adv. Mater. 2017, 29, 1702076. (SCI,影响因子:25.8,top,一区)
3. J. Zhao, W. Chen, J. L. Meng, H. Yu, M. Z. Liao, J. Q. Zhu, Z. Wei, R.Yang, D. X. Shi, G. Y. Zhang, Integrated Flexible and High-quality Thin Film Transistors Based on MoS2. Adv. Electr. Mater. 2015, 150039. (SCI,影响因子:5.49,一区)
4. J. Zhao, H. Yu, W. Chen, R. Yang, J. Q. Zhu, J. L. Meng, D. X. Shi, G. Y. Zhang, Patterned Peeling 2D MoS2 off the Substrate. .ACS Appl. Mat. & Interfaces 2016, 8, 16546. (SCI,影响因子:8.46,top,一区)
5. W. Chen*, J. Zhao*, J. Zhang*, L. Gu, Z. Z. Yang, H. Yu, X. T. Zhu, R. Yang, D. X. Shi, X. C. Lin, J. D. Guo, G. Y. Zhang, Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2. J. Am. Chem. Soc. 2015, 137, 15632. *= equal contribution.(SCI,影响因子:14.36,top,一区)
6. J. Zhao, G. L. Wang, R. Yang, X. B. Lu, M. Cheng, C. L. He, J. L. Meng, D. X. Shi, G. Y. Zhang, Tunable Piezoresistivity of nanographene films for strain sensoring. ACS Nano, 2015, 9, 1622.(SCI,影响因子:13.7,top,一区)
7. J. Zhao, G. Y. Zhang, D. X. Shi, Review on graphene-based strain sensors. Chin. Phys. B., 2013, 22, 057701. (SCI)
8. J. Zhao, C. L. He, R. Yang, Z. W. Shi, M. Cheng, W. Yang, G. B. Xie, D. M. Wang, D. X. Shi, G. Y. Zhang, Ultra-sensitive strain sensors based on piezoresistive nanographene films. Appl. Phys. Lett., 2012, 101, 063112. (SCI,影响因子:3.58,top,一区)

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