个人简历

1995年7月于中国科学院长春光学机密机械与物理研究所获得博士学位，1997年7月于复旦大学表面物理国家重点实验室博士后出站，1997年7月至今在北京交通大学作副教授和教授，其间先后在1998年4月—1999年4月于香港科技大学作高访，2001年7月—2002年8月于日本北海道大学作研究员。

研究领域

光电功能材料与器件物理 发光、显示与新能源技术 光学工程(专业学位) 光学

近期论文

Zuofu Hu, Zhenjun Li, Lu Zhu, Fengjuan Liu, Yanwu Lv, Xiqing Zhang and Yongsheng Wang, Narrow-band ultraviolet photodetector based on MgZnO and NPB heterojunction , Optics Letters, 37（2012）3072
F. J. Liu, Z. F. Hu, L. Zhu, Z. J. Li, H. Q. Huang, J.W. 5 Zhao, X. Q. Zhang, and Y. S. Wang，Solar-Blind Photoresistors Based on Mg0.48Zn0.52O Thin Films Grown on r-Al2O3 Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy，IEEE Transactions on electron devices，59(2012)1970
Zhenjun Li, Zuofu Hu, Li Jiang, Haiqin Huang, Fengjuan Liu, Xiqing Zhang, Yongsheng Wang, Penggang Yin , Lin Guo, Nanoporous ZnO film grown on sapphire by chemical vapor deposition, Materials Letters 79 (2012) 209–211
F.J. Liu, Z.F. Hu, J. Sun, Z.J. Li, H.Q. Huang, J.W. Zhao, X.Q. Zhang, Y.S. Wang，Ultraviolet photoresistors based on ZnO thin films grown by P-MBE, Solid-State Electronics,68 (2012)90
Jian-Wei Zhao, Jian Sun, Hai-Qin Huang, Feng-Juan Liu, Zuo-Fu Hu, Xi-Qing Zhang，Effects of ZnO buffer layer on GZO RRAM devices, Applied Surface Science, 258(2012)4588
Zhenjun Li, Zuofu Hu, Fengjuan Liu, Haiqin Hang, Xiqing Zhang，Yongsheng Wang, Lateral growth and optical properties of ZnO microcrystal on sapphire substrate, Optical materials, 34(2012)1908
Zhenjun Li, Zuofu Hu, Li Jiang, Haiqin Huang, Fengjuan Liu, Xiqing Zhang, Yongsheng Wang, Synthesis and optical properties of three-dimensional nanowall ZnO film prepared by atmospheric pressure chemical vapor deposition, Applied Surface Science,258 (2012)10175-10179
Zhao Jian-Wei, Liu Feng-Juan, Huang Hai-Qin, Hu Zuo-Fu, and Zhang Xi-Qing，Effects of substrate temperature on ZnO-based resistive random access memory devices, Chinese Physics B，21（2012）065201
DAI Qian, ZHU Lu, SUN Jian, ZHANG XiQing & WANG YongSheng，Organic photodetectors based on transparent electrodes for application in ultraviolet light detection，Science China, 55(2012)1551
Jianwei Zhao , Fengjuan Liu, Jian Sun,Haiqin Huang, Zuofu Hu , and Xiqing Zhang*，Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices, Chin. Optics Lett., 10 (2012) 013102
L. Zhu,W. Sh. Wang, Zh. G. Yao, X. Q. Zhang, and Y. S. Wang , Ultraviolet Photodetectors With Narrow-Band Spectral Response Using TAPC Donor, IEEE Transactions on Electron Devices，59(2012) 3583
Lu Zhu, Qian Dai, Zuo-fu Hu, Xi-qing Zhang, and Yong-sheng Wang, High response organic deep ultraviolet photodetector with PEDOT:PSS anode, Optics Letters, 36(2011) 1821
Lu Zhu, Qian Dai, Zuo-fu Hu, Xi-qing Zhang, and Yong-sheng Wang， Organic Deep Ultraviolet Photodetector With Response Peak Focusing on 270 nm Using the Acceptor BAlq, IEEE Photonics Technology Lett., 23（2011）1835
Zhenjun Li, Zuofu Hu, Fengjuan Liu, Jian Sun, Haiqin Huang, Xiqing Zhang, Yongsheng Wang, High quality hexangular ZnO crystals grown by chemical vapor deposition，Materials Letters, 65 (2011) 809
H.Q. Huang, F.J. Liu, J. Sun, J.W. Zhao, Z.F. Hu, Z.J. Li, X.Q. Zhang, Y.S. Wang, Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy, Applied Surface Science, 257 (2011) 10721
Fengjuan Liu, Rui Zhang, Zuofu Hu, Jian Sun, Haiqin Huang, Zhenjun Li, Jianwei Zhao, Penggang Yin, Lin Guo, Xiqing Zhang, and Yongsheng Wang, Structural and optical properties of non-polar (11-20) ZnO films grown by plasma-assisted molecular-beam epitaxy, IEEE Transactions on Plasma Science, 39(2011)700
HUANG Hai-Qin, LIU Feng-Juan, SUN Jian, ZHAO Jian-Wei, HU Zuo-Fu, LI Zhen-Jun, ZHANG Xi-Qing*, Influence of the active layer thickness on the electrical properties of ZnO thin film transistors fabricated by radio frequency magnetron sputtering, Journal of Physics and Chemistry of Solids, 72 (2011) 1393
SUN Jian, DAI Qian, LIU FengJuan, HUANG HaiQin, LI ZhenJun, ZHANG XiQing* & WANG YongSheng, Ultraviolet photoconductive detector based on Al-doped ZnO thin film with fast response，Science China（Physics, Mechanics & Astronomy）, 54（2011）102
HUANG Hai-Qin, SUN Jian, LIU Feng-Juan, ZHAO Jian-Wei, HU Zuo-Fu, LI Zhen-Jun, ZHANG Xi-Qing, WANG Yong-Sheng, Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering, Chin. Phys. Lett. 28 (2011) 128502
Jian Sun, Kuanjun Peng, Lu Zhu, Zuofu Hu, Qian Dai, Xiqing Zhang, and Yongsheng Wang, Ultraviolet photodetector with bandpass characteristic based on a blend of PVK and PBD, Chin. Optics Lett., 9(2011) 052501
Q. Dai and X. Q. Zhang, High-response ultraviolet photodetector based on NPB and PBD, Optics Express, 18（2010）11821
Jian Sun, Feng-Juan Liu, Hai-Qin Huang, Jian-Wei Zhao, Zuo-Fu Hu, Xi-Qing Zhang, Yong-Sheng Wang, Fast response ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by radio-frequency magnetron sputtering, Applied Surface Science, 257 (2010) 921–924