个人简历

2009年 美国普度大学电子与计算机工程系博士，曾任IBM T.J Watson 研究中心研究员，华中科技大学教授。

研究领域

""后摩尔器件，低维材料及异质结，柔性射频器件，神经形态器件""""

近期论文

X. Li, Z. Yu, X. Xiong, T. Li, T. Gao, R. Wang, R. Huang, and Y.Q. Wu*, “High-Speed Black Phosphorus Field-Effect Transistors Approaching Ballistic Limit”, Science Advances. (In press)\r
\r
T. Li , X. Li , M. Tian , Q. Hu , X. Wang , S. Li and Y.Q. Wu*, “Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D-3D heterostructure”, Nanoscale, 11, 4701-4706, 2019\r
\r
M. Tian, B. Hu, H. Yang, C. Tang, M. Wang, Q. Gao, X. Xiong, Z. Zhang, T. Li, X. Li, C. Gu, Y.Q. Wu*, “Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors”, Advanced Electronic Materials，2019, 1800711\r
\r
M. Wang, X. Li, X. Xiong, J. Song, C. Gu, D. Zhan, Q. Hu, S. Li and Y.Q. Wu*, “High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition”, IEEE Electron Device Letters 40, 3, 419-422, 2019\r
\r
M. Tian, X. Li, Q. Gao, X. Xiong, Zhenfeng Zhang, Y.Q. Wu*, “Improvement of Conversion Loss of Resistive Mixers Using Bernal-stacked Bilayer Graphene”, IEEE Electron Device Letters 40, 325 – 328, 2019\r
\r
S. Li, Q. Hu, X. Wang, T. Li, Xuefei Li, Y.Q. Wu*, “Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiOx as Gate Dielectric”, IEEE Electron Device Letters 40, 295 – 298, 2019\r
\r
L. Liang, W. Li, S. Li, X. Li and Y.Q. Wu*, “Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric”, AIP Advances 8, 125314, 2018\r
\r
Q. Gao, Z. Zhang, X. Xu, J. Song, X. Li and Y.Q. Wu*, “Scalable high performance radio frequency electronics based on large domain bilayer MoS2”, Nature Communications 9, 4778, 2018\r
\r
Z. Zhang, X. Xu, J. Song, Q. Gao, S. Li, Q. Hu, X. Li, and Y.Q. Wu*, “High-performance transistors based on monolayer CVD MoS2 grown on molten glass”, Applied Physics Letters 113, 202103, 2018\r
\r
X. Li, X. Xiong, T. Li, T. Gao, Y.Q. Wu*, “Optimized Transport of Black Phosphorus Top Gate Transistors using Alucone Dielectrics”, IEEE Electron Device Letters 39, 12, 1952 – 1955, 2018\r
\r
Q. Hu, S. Li, T. Li, X. Wang, X. Li and Y.Q. Wu*, “Channel Engineering of Normally-Off AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-κ Dielectric”, IEEE Electron Device Letters 39, 9, 1377 – 1380, 2018\r
\r
T. Li, M. Tian, S. Li, M. Huang, X. Xiong, Q. Hu, S. Li, X. Li, Y.Q. Wu*, “Black Phosphorus Radio Frequency Electronics at Cryogenic Temperatures”, Advanced Electronic Materials 4, 1800138, 2018\r
\r
Y.Q. Wu*, “Multifunctional devices from asymmetry”, Nature Electronics 1, 331–332, 2018 (News & Views)\r
\r
M. Tian, X. Li, T. Li, Q. Gao, X. Xiong, Q. Hu, M. Wang, X. Wang, and Y.Q. Wu*, “High Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High Frequencies”, ACS Applied Materials Interfaces 10 (24), 20219–20224, 2018\r
\r
T. Gao, X. Li, X. Xiong, M. Huang, T. Li, and Y.Q. Wu*, “Optimized Transport Properties in Lithium Doped Black Phosphorus Transistors”, IEEE Electron Dev. Lett. 39, 5, 769 – 772, 2018\r
\r
X. Xiong, X. Li, M. Huang, T. Li, T. Gao and Y.Q. Wu*, “High Performance Black Phosphorus Electronic and Photonic Devices with HfLaO Dielectric”, IEEE Electron Dev. Lett. 39, 1, 127 – 130, 2018\r
\r
X. Li, T. Li, Z. Zhang, X. Xiong, S. Li and Y.Q. Wu*, “Tunable Low-Frequency Noise in Dual-Gate MoS2 Transistors”, IEEE Electron Dev. Lett. 39, 131-134, 2018\r
\r
X. Li, R. Grassi, S. Li, T. Li, X. Xiong, T. Low*, and Y.Q. Wu*, “Anomalous temperature dependence in metal-black phosphorus contact”, Nano Lett., 18 (1), 26–31, 2018\r
\r
X. Li, X. Xiong, T. Li, S. Li, Z. Zhang and Y.Q. Wu*, “Effect of Dielectric Interface on the Performance of MoS2 Transistors”, ACS Applied Materials & Interfaces, 9 (51), 44602–44608, 2017\r
\r
20. M. Huang, S. Li, Z. Zhang, X. Xiong, X. Li and Y.Q. Wu*, “Multifunctional high-performance van der Waals heterostructures”, Nature Nanotechnology, Nature Nanotechnology 12, 1148–1154, 2017