个人简历
1975年出生于四川，1998年和2003年在北京大学先后获得理学学士和理学博士学位。2003年进入北京大学信息学院做博士后研究，2005年任副教授，2012年任教授。
研究领域
主要研究领域为半导体器件模型、模拟及参数提取。
近期论文
1. Du, Gang; Liu, Xiaoyan; Xia, Zhiliang; Kang, Jinfeng; Wang, Yi; Han, Ruqi; Yu, HongYu; Kwong, Dim-Lee. Monte Carlo simulation of p- and n-channel GOI MOSFETs by solving the quantum boltzmann equation. IEEE Transactions on Electron Devices, v 52, n 10, October, 2005, p 2258-2263 2. Du, Gang; Liu, Xiao Yan; Xia, Zhi Liang; Wang, Ya Ke; Hou, Dan Qiong; Kang, Jin Feng; Han, Ru Qi. Evaluations of scaling properties for Ge on insulator MOSFETs in nano-scale Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, v 44, n 4 B, April, 2005, Solid State Devices and Materials, p 2195-2197 3. Du, Gang; Liu, Xiao-Yan; Han, Ru-Qi. Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation Chinese Physics, v 15, n 1, Jan 1, 2006, p177-181 4. Du Gang， Liu Xiaoyan， Xia Zhiliang, Yang Jingfeng and Han Ruqi. Effect of Interface Roughness on the Carrier Transport in Germanium MOSFETs Investigated by Monte Carlo Method. Chinese Physics B, v 19, n 5, p 0573041-0573046, 2010. 5. Du Gang; Liu XiaoYan; Han RuQi. High Frequency Performance of Nano-ScaleUltra-Thin-Body Schottky-Barrier n- MOSFETs. Science China-Information Scienses v 54, n 8, p 1756-1761. AUG 2011 6. Chang, Pengying; Liu, Xiaoyan; Zeng, Lang; Wei, Kangliang; Du, Gang. Investigation of Hole Mobility in Strained InSb Ultrathin Body pMOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES v 62,n 3,p 947-954, MAR 2015 7. Hai Jiang; Longxiang Yin; Yun Li; Nuo Xu; Kai Zhao; Yandong He; Gang Du; Xiaoyan Liu; Xing Zhang. Comprehensive understanding of hot carrier degradation in multiple-fin SOI FinFETs. Reliability Physics Symposium (IRPS), 2015 8. Pengying Chang, Xiaoyan Liu, Gang Du, Xing Zhang. Assessment of Hole Mobility in Strained InSb, GaSb and InGaSb Based Ultra-Thin Body pMOSFETs with Different Surface Orientations IEDM 2014 9. Huang, Peng; Wang, Yijiao; Li, Haitong; Gao, Bin; Chen, Bing; Zhang, Feifei; Zeng, Lang; Du, Gang; Kang, Jinfeng; Liu, Xiaoyan. Analysis of the Voltage-Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching IEEE TRANSACTIONS ON NANOTECHNOLOGY v 13,n 6, p 1127-1132, NOV 2014 10. Wang, Juncheng; Du, Gang; Wei, Kangliang; Zhao, Kai; Zeng, Lang; Zhang, Xing; Liu, Xiaoyan. Mixed-mode analysis of different mode silicon nanowire transistors-based inverter. IEEE Transactions on Nanotechnology, v 13, n 2, p 362-367, March 2014 11. Liu, Gai; Du, Gang; Lu, Tiao; Liu, Xiaoyan; Zhang, Pingwen; Zhang, Xing. Simulation study of quasi-ballistic transport in asymmetric DG-MOSFET by directly solving Boltzmann transport equation. IEEE Transactions on Nanotechnology, v 12, n 2, p 168-173, 2013 12. Wang, Jun-Cheng; Du, Gang; Wei, Kang-Liang; Zhang, Xing; Liu, Xiao-Yan. Three-dimensional Monte Carlo simulation of bulk fin field effect transistor. Chinese Physics B, v 21, n 11, November 2012 13. Wu, Wei; Du, Gang; Liu, Xiaoyan; Sun, Lei; Kang, Jinfeng; Han, Ruqi. Physical-based threshold voltage and mobility models including shallow trench isolation stress effect on nMOSFETs. IEEE Transactions on Nanotechnology, v 10, n 4, p 875-880, July 2011 14. Zhu, Shufang; Wei, Kangliang; Du, Gang; Liu, Xiaoyan. 3D Monte Carlo simulation of gate-all-around germanium nmosfet with effective potential quantum correction. Journal of Circuits, Systems and Computers, v 22, n 10, December 2013 15.Lun, Zhiyuan; Du, Gang; Zhao, Kai；Xiao-Yan Liu, Yi Wang. A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory. SCIENCE CHINA-INFORMATION SCIENCES vol.59,no.12, DEC 2016 16.Zhi-Yuan Lun, Yun Li, Kai Zhao, Gang Du, Xiao-Yan Liu, Yi Wang. Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level. Chinese Physics B, Vol. 25, No. 8, 2016.
