个人简历

学 历： 1980－1984：浙江大学无线电电子工程学系电子物理与技术专业学习，获工学学士学位； 1984－1987：浙江大学信息与电子工程学系电子物理与器件专业学习，获工学硕士学位； 1996－1999：德国Augsburg大学物理系，获德国理学博士（Dr. rer. nat.）学位。 工作经历： 2003－现在：武汉大学物理科学与技术学院，珞珈学者•特聘教授，博士生导师； 2001－2003：日本National Institute of Advanced Industrial Science and Technology (AIST), Research fellow 2000－2001：葡萄牙Nuclear and Technological Institute博士后； 1996－1999：德国Augsburg大学物理系，获德国DAAD博士生奖学金；

近期论文

1. T. Wang, H. Wu, H. Zheng, J. B. Wang, Z. Wang, C. Chen, Y. Xu, and C. Liu*, Nonpolar light emitting diodes of m-plane ZnO on c-plane GaN with the Al2O3 interlayer, Appl. Phys. Lett. 102, 141912 (2013). 2. Ying Lin, Xing Qiang Liu, Ti Wang, Chao Chen, Hao Wu, Lei Liao and Chang Liu*, Shape-dependent localized surface plasmon enhanced UV-emission from ZnO grown by atomic layer deposition, Nanotechnol. 24, 125705 (Mar. 7, 2013) (5pp) 3. T. Wang, Hao Wu, Z. Wang, C. Chen, and C. Liu*, Blue light emission from the heterostructured ZnO/InGaN/GaN, Nanoscale Research Lett. 8, 99 (2013). 4. Zhi Wei Ai, Yun Wu, Hao Wu, Ti Wang, Chao Chen, Yang Xu and Chang Liu*, Enhanced band-edge photoluminescence from ZnO-passivated ZnO nanoflowers by atomic layer deposition, Nanoscale Research Lett. 8, 105 (2013). 5. T. Wang, H. Wu, Z. Wang, C. Chen, and C. Liu*, Improvement of optical performance of ZnO/GaN p-n junctions with an InGaN interlayer, Appl. Phys. Lett. 101, 161905 (2012). 6. T. Wang, Hao Wu, Z. Wang, C. Chen, and C. Liu*, Ultralow Emission Threshold Light-Emitting Diode of Nanocrystalline ZnO/p-GaN Heterojunction，IEEE Elect. Device Lett., 33, 1030 (2012). 7. Z. An, F. Q. Liu, Y. Lin, and C. Liu*, The universal definition of spin current, Sci. Rep. 2, 388 (2012). 8. T. Wang, H. Wu, C. Chen, and C. Liu*，Growth, optical, and electrical properties of nonpolar m-plane ZnO on p-Si substrates with Al2O3 buffer layers, Appl. Phys. Lett. 100, 011901 (2012). 9. Yang Pan, Zheng Wang, Ting Peng, Kemin Wu, Hao Wu, C. Liu*, Improvement of structural and electrical properties of Cu2O films with InN epilayers, J. Cryst. Growth, 334， 46 (2011). 10. Z. P. Zhou, S. J. Luo, Y. Wang, Z. W Ai, C. Liu*, D. F. Wang, Y.P. Lee, Room temperature ferromagnetism and hopping transport in amorphous CrN thin films, Thin Solid Films, 519，1989 (2011). 11. K. M. Wu, T. Han, K. Shen, B. Liu, T. Peng, Y. Pan, H. D. Sun, and C. Liu*, Growth of vertically aligned InGaN nanorod arrays on p-Type Si substrates for heterojunction diodes, J. Nanosci. Nanotechnol. 10 , 8139 (2010). 12. Y. Pan, T. Wang, K. Shen, T. Peng, K. M. Wu, W. Y. Zhang, C. Liu*, Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In, J. Cryst. Growth 313, 16 (2010). 13. T. Peng, K. Shen, H. Wu, C. Hu, and C Liu*, Room-temperature ferromagnetism and electrical properties of Cu2O/GaN heterostructures, J. Phys. D: Appl. Phys. 43, 315101 ( 2010). 14. Q. M. Fu, T. Peng, Y. Pan and C. Liu*, Effects of AlN/GaN superlattices on structural properties of Al0.45Ga0.55N grown on AlN/sapphire templates, J. Kor. Phys. Soc., 55, 2659 (2009). 15. H. Wu, J. Yuan, T. Peng, Y. Pan, T. Han, K. Shen, B. R. Zhao, C. Liu*, Control of the epitaxial orientation and reduction of the interface leakage current in YMnO3/GaN heterostructure, J. Phys. D - Appl. Phys. 18, 185302 (2009). 16. Yuan, Longyan, Fang, Guojia, Zhou, Hai, Gao, Yihua, Liu, Chang, Zhao, Xingzhong，Suppression of near-edge optical absorption band in sputter deposited hafnium oxynitride via nitrogen incorporation and annealing，J. Phys. D – Appl. Phys., 42, 145302 (2009). 17. Q. M. Fu, T. Peng, C. Liu*, Effects of real-time monitored growth interrupt on crystalline quality of AlN epilayer grown on sapphire by molecular beam epitaxy, J. Cryst. Growth, 311, 3553 (2009). 18. B. Liu, J. Gao, K. M. Wu and C. Liu*，Preparation and rapid thermal annealing of AlN thin films grown by molecular beam epitaxy, Solid State Commun. 149, 715 (2009). 19. Y. Tian, H. B. Lu, L. Liao, J. C. Li, C. Liu, Synthesis and evolution of hollow ZnO microspheres assisted by Zn powder precursor, Solid State Commun. 149, 456 (2009). 20. H. Wu, J. Yuan, T. Peng, Y. Pan, T. Han, and C. Liu*, Temperature- and field-dependent leakage current of epitaxial YMnO3/GaN heterostructure，Appl. Phys. Lett. 94, 122904 (2009).