个人简历

07.2017-现今 特聘教授，博士生导师，中南大学机电工程学院\r
中国科学院半导体研究所 \r
01.2016-07.2017 博士后研究员, 英国谢菲尔德大学氮化物材料与器件中心, EPSRC 英国国家III-V族半导体研发中心 \r
04.2015-12.2015 博士后研究科学家，新加坡科技与设计大学工程研究中心，新加坡科技-麻省理工学院联合设计中心, 新加坡国立大学先进二维材料&石墨烯材料与器件研发中心\r
07.2013-04.201 博士后研究员，新加坡南洋理工大学电力与电子工程系，卓越半导体发光与显示中心\r
09.2008-07.2013 博士, 中国科学院大学，中国科学院半导体研究所，中国科学院半导体照明中心\r
09.2004–07.2008 学士, 中南大学材料科学与工程学院

研究领域

"""""1. 微纳制造技术与装备； 2. 微纳光学和光电子器件系统； 3. 新型光电显示功能组件和系统； 3. 宽禁带半导体（III-氮化物) 光电器件； 4.生物传感器件。欢迎对纳米科技、微系统、微加工、光电显示，光电功能器件等方向感兴趣的同学加入，专业背景可为物理，光学工程，光电子微电子，力学等。课题组与国内外众多顶级课题组有深入合作关系，加入课题组的学生将有机会和国内外研究机构，如中科院半导体所，清华大学，新加坡科技大学以及业界公司等深入合作，联合培养等机会，将为组内同学提供充足的工资绩效，生活补贴，竭诚争取，努力创造良好的工作环境和科研条件，深造机会等。"

近期论文

Liancheng Wang, Y. Y. Zhang, R. Chen, Z. Q. Liu, J. Ma, Z. Li, X. Y. Yi, H. J. Li, J. X. Wang, G. H. Wang, W. H. Zhu, J. M. Li, Optically-pumped lasing with Q-factor exceeding 6000 from Wet-etched GaN Micro-pyramids, Optics Lett., 2017, 42, 15, 2976.\r
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Liancheng Wang, Z. Li, Z. Liu, Y. Zhang, H. Li, X. Yi, J. Wang, G. Wang, J. Li, Nanostructure Nitride Light Emitting Diodes via Talbot Effect using Improved Colloidal Photolithography, Nanoscale, 2017, 9, 7021.\r
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Liancheng Wang, RJH Ng, S Safari Dinachali, M Jalali, Y Yu, JKW Yang, Large Area Plasmonic Color Palettes with Expanded Gamut Using Colloidal Self-Assembly, ACS Photonics 3 (4), 627-633, 2016. Plasmonic color via Nanosphere lithography. \r
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Liancheng Wang, Z Liu, X Yi, Y Zhang, H Li, J Li, G Wang, Analysis of symmetry breaking configurations in metal nanocavities: Identification of resonances for generating high-order magnetic modes and multiple tunable magnetic-electric Fano resonances, J. Appl. Phys. 119 (17), 173106, 2016. Plasmonic Modes Theoretical Analysis. \r
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Liancheng Wang, Z Liu, ZH Zhang, YD Tian, X Yi, J Wang, J Li, G Wang, Interface and photoluminescence characteristics of graphene-(GaN/InGaN)n multiple quantum wells hybrid structure, J. Appl.Phys.119(14), 143105, 2016. Graphene-(GaN/InGaN)n Interface Analysis. \r
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Liancheng Wang*, Y. Cheng, Z. Liu, X. Yi, H. Zhu, G. Wang, Hybrid tunnel junction-graphene transparent conductive electrodes for nitride lateral light Emitting Diodes, ACS Applied Materials & Interface, 2016, 8, 1176−1183. DOI: 10.1021/acsami.5b09419. Graphene transparent conductive electrodes for LEDs. \r
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Liancheng Wang*, E. Guo, Z. Liu, X. Yi, G. Wang, High Performance Nitride Vertical Light Emitting Diodes based on Cu Electroplating Technical route, IEEE Transaction on Electron Devices, 63, 3, 2016. 10.1109/TED.2016.2520393. Vertical structure LEDs Fabrication. \r
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Liancheng Wang*, Z-H. Zhang, N. Wang, Current crowding phenomenon: Theoretical and direct correlation with the efficiency droop of light emitting diodes by a modified ABC model, IEEE J. Quantum Electronics, 51, 5(2015). Current Diffusion Analysis. \r
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Liancheng Wang*, W. Liu, Y. Zhang, Z-H. Zhang, S.T.Tan, X. Yi, G. Wang*, X. Sun*, H. Zhu*, H.V. Demir*, Graphene transparent conductive electrodes in GaN-based light emitting diodes: Challenges and Countermeasures, Nano Energy (2015) 12, 419–436. Graphene Transparent Conductive Electrodes in GaN LEDs review. \r
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Liancheng Wang, Y. Zhang, X. Li, Z. Liu, E. Guo, X. Yi, J. Wang, H. Zhu*, G. Wang, Partially-sandwiched Multi-layer Graphene used as Transparent Conductive Layer for InGaN-based Vertical Light Emitting Diodes, Appl. Phys. Lett. 101, 061102 (2012).【covered by Semiconductor Today(27 August 2012)】 Graphene Transparent Conductive Electrodes for VLEDs. \r
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Liancheng Wang, J. Ma, Z. Liu, X. Yi*, H. Zhu*, G. Wang, In-situ fabrication of bendable hexagonal pyramids array vertical light emitting diodes with graphene as interconnected transparent conductive layer. ACS Photonics 2014, 1, 421−429. Bendable VLEDs Fabrication. \r
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Liancheng Wang*, Z. Liu, E. Guo, H. Yang, X. Yi*, G. Wang, Interface and transport properties of metallization contacts to wet etching roughed and un-roughed N-polar n-type GaN, ACS Applied Materials & Interfaces 2013, 5 (12), 5797-803. Metal/N-polar GaN contact investigation for VLEDs. \r
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Liancheng Wang, Y. Zhang, X. Li, Z. Liu, E. Guo, X. Yi, J. Wang, H. Zhu* G.Wang, Interface and transport properties of GaN/graphene junction InGaN-based LEDs, J. Phys. D: Appl. Phys. 45 (2012) 505102. GaN/graphene Contact. \r
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Liancheng Wang, Y. Zhang, X. Li, E. Guo, Z. Liu, X. Yi*, H. Zhu*, G. Wang, Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping, RSC Adv., 2013, 3, 3359. GaN/graphene Contact. \r
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Liancheng Wang, Y. Zhang, X. Li, E. Guo, Z. Liu, X. Yi*, H. Zhu*,G. Wang, InGaN-based vertical light emitting diodes with HNO3 modified-graphene transparent conductive layer and high reflective membrane current blocking layer, Proc. R. Soc. A 469: 20120652 (2013). Graphene TCEs for VLEDs. \r
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Liancheng Wang*, Z. Liu, Y. Zhang, H. Zheng, H. Xie, H. Yang, X. Yi*, G. Wang, Mechanism in Thermal Stress aided Electrodeless Etching of GaN Epitaxial on Sapphire and approaches to vertical devices, RSC Adv., 2013,3, 10934-10943. Chemical etching for sapphire removal towards VLEDs. \r
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Liancheng Wang*, J. Ma, Z. Liu, X. Yi*, G. Wang, N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array. J. Appl. Phys. 2013, 10, 114 (133101). N-polar GaN chemical etching towards micro VLEDs. \r
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Liancheng Wang, J. Ma (Joint first author), Z. Liu, G. Yuan, X. Ji, P. Ma, J. Wang, X. Yi*, G. Wang, J. Li, Hexagonal Pyramids Array micro vertical Light Emitting Diodes by N-polar Wet Etching, Optics Express, 21, 3, 3457 (2013). MicroVLEDs Fabrication. \r
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T. Tian, Liancheng Wang*, T. Zhan, J. Guo, X. Yi*, Z. Liu, J. Li, and G. Wang, Optimized subsequent-annealing-free Ni/Ag based metallization contact to p-type GaN for vertical light emitting diodes with high yield and extremely low operating voltage (2.75 V@350 mA,>95%), J. Phys. D Appl. Phys. 47 (2014)115102.\r
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Liancheng Wang*, G. Enqing, Liu. Zhiqiang, Yi Xiaoyan, Wang Guohong. Electrical characteristics of vertical light emitting diode with n-type contact on a selectively wet-etching roughed surface. J. Semiconductors. vol.32, no.2 (2011).