个人简历

经历：本科及硕士毕业于浙江大学材料系，博士毕业于浙江大学信电系 \r
海外经历：2007,2010-2011年美国UCF大学访问教授；2009-2010,2011年英国剑桥大学访问教授，2014年及2017年受香港城市大学资助赴该校讲学一周，2015年受东京工业大学资助赴该校讲学两周，2016年受新加坡科技设计大学资助赴该校讲学两周。 \r
主要兼职：科技部专项首席科学家、**科技委电子领域战略专家委员及**组专家、国家**奖励评审委员会委员，IEEE高级会员、IEEE EDSHZ Vice-president、中国静电学会标准委员会委员、ESDA China Vice-president、中华（台湾）ESD学会技术委员会委员等

研究领域

微电子与固体电子学 柔性电子 传感器及MEMS微系统""

近期论文

1) H. Jin, J. Zhou, X. He, W. Wang, H. Guo, S. Dong*, D. Wang, Y. Xu, J. Geng, J. K. Luo*, and W. I. Milne, Flexible surface acoustic wave resonators built on disposable plastic film for electronics and lab-on-a-chip applications, Scientific Reports,2013(3)2140-2145.\r
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2) Surface acoustic wave resonators based on (002) AlN/Pt/diamond/silicon layered structure' has been accepted for publication in Thin Solid Films，Changjian Zhou, Dr.; Yi Yang, Dr.; Hao Jin; Bin Feng; Shurong Dong; Jikui Luo; Tianling Ren; Mansun Chan; Cary Y. Yang\r
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3) X.L. He, D.J. Li, J. Zhou, W.B. Wang, W.P. Xuan, S.R.Dong*, H. Jin and J.K.Luo*，high sensitivity humidity sensors using flexible surface acoustic wave devices made on nanocrystalline ZnO/polyimide substrates，Journal of Materials Chemistry C，2013. DOI: 10.1039/c3tc31126k\r
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4) J. Zhou, X.L. He, H. Jin, W.B. Wang, B. Feng, S.R Dong*, D.M Wang,G.Y. Zou and J. K. Luo*, Crystalline structure effect on the performance of flexible ZnO/polyimide surface acoustic wave devices, Journal of Applied Physics, 2013(114) 044502,doi: 10.1063/1.4816002\r
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5) S. R. Dong*, X. L. Bian, Hao Jin, N. N. Hu, Jian Zhou, Hei Wong, M. J. Deen*，Electrically Tunable Film Bulk Acoustic Resonator，Applied Physics Letters, 2013 (103) 062904, doi: 10.1063/1.4818157\r
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6) J. Zhou, X. L. He, W. B. Wang, Q. Zhu, W. P. Xuan, H. Jin, S. R. Dong*, D. M. Wang,J. K. Luo*, Transparent surface acoustic wave devices on ZnO/Glass using Al doped ZnO as the electrode, IEEE Electron Device Letters, 2013. Doi: 10.1109/LED.2013.2276618\r
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7) Dong, S*., Zhong, L. Zeng, J. Guo, W. Li, H. Wang, J. Guo, Z. Liou, J.J. ，Study of graphene field-effect transistors under electrostatic discharge stresses， Electronics Letters (Interview highlight), 2013,49(17) doi:10.1049/el.2013.1865\r
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8) Shurong Dong*, Meng Miao, Jian Wu, Jie Zeng,Zhiwei Liu, Liou, J.J. , Low-Capacitance SCR Structure for RF I/O Application, IEEE Transactions on Electromagnetic Compatibility, 2013V55N2PP:241 - 247\r
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9) C. J. Zhou, Y. Yang*, Y. Shu, H. L. Cai, T. L. Ren*, M. Chan, J. Zhou, H. Jin, S. R. Dong, and C. Y. Yang，Visible-light photoresponse of AlN-based film bulk acoustic wave resonator, Applied Physics Letters, 2013(102) 191914\r
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10) Weifeng Zhang, Chao Ma, Jihong Fang, Jipeng Cheng,* Xiaobin Zhang, Shurong Dong，Li Zhang*， Asymmetric electrochemical capacitors with high energy and power density based on graphene/CoAl-LDH and activated carbon electrodes，RSC AdvancesTop 10 most accessed articles in March，2013,3, 2483-2490\r
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11) J.Zhang, H.Yang, Q.L.Zhang, S.R. Dong and J. K. Luo, “Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition”, Appl. Surf. Sci. 282 (2013) 390– 395. http://dx.doi.org/10.1016/j.apsusc.2013.05.141\r
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12) X. L. He*, L. Garcia-Gancedo, P. C. Jin, J. Zhou, W. B. Wang, S. R. Dong, J. K. Luo*, A. J. Flewitt and W.I. Milne, Film bulk acoustic resonator pressure sensor with self temperature reference, Journal of Micromechanics and Microengineering, 2012(22) 125005.doi:10.1088/0960-1317/22/12/125005\r
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13) Jian Zhang, Hui Yang*, Qi-long Zhang*, Shurong Dong, and J. K. Luo, Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition, Applied Physics Letters, 2012(102) 012113\r
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14) H. Jin, J. Zhou, S.R. Dong*, B. Feng, J.K. Luo, D.M. Wang, W.I. Milne and C.Y. Yang, Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive direct-current magnetron sputtering, Thin Solid Films, 2012(520) 4863.doi:10.1016/j.tsf.2012.03.015\r
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15) Jian Zhou, Shurong Dong*, Hao Jin, Bing Feng, and DemiaoWang, Flexible Surface AcousticWave Device with AlN Film on Polymer Substrate, Journal of Control Science and Engineering, 2012,7,doi:10.1155/2012/610160\r
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16) Pengcheng Jin, Shurong Dong*, Hao Jin, andMengjunWu，Processing Chip for Thin Film Bulk Acoustic ResonatorMass Sensor, Journal of Control Science and Engineering, 2012,3,doi:10.1155/2012/923617\r
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17) Hei Wong*, B. L. Yang, Shurong Dong, Current Conduction and Stability of CeO2/La2O3 Stacked Gate Dielectric, Applied Physics Letters, 2012(101) 233507\r
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18) X.H. Shen, H. Jin*, S.R. Dong, H. Wong, J. Zhou, Z.D. Guo, and D.M. Wang, Effects of high-temperature treatment on the reaction between Sn-3%Ag-0.5%Cu solder and sputtered Ni-V film on ferrite substrate. Journal of Electronic Materials, 2012V41N11PP:3145-3151\r
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19) H. Jin*, B. Feng, S.R. Dong, C.J. Zhou, J. Zhou, Y. Yang, T.L. Ren, J.K. Luo, and D.M. Wang, Influence of substrate temperature on structural properties and deposition rate of AlN thin film deposited by reactive magnetron sputtering. Journal of Electronic Materials, 2012V 41N7PP:1948-1954.\r
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20) Meng Miao,Shurong Dong*,Mingliang Li,Jian Wu,Fei Ma,Jianfeng Zheng,Yan Han, A novel gate-suppression technique for ESD protection, Microelectronics Reliability, 2012V52N8PP1598–1601\r
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21) Bin Feng,Shurong Dong*,Hao Jin, Jian Zhou, Yi Yang,Tianling Ren, Jikui Luo, Demiao Wang, Ultra-violet light assisted reactive RF magnetron sputtering deposition of AlN thin films at room temperature, Materials Letters, 2012V79N7PP 25–28\r
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22) Shurong Dong*, Hao Jin,Meng Miao,Jian Wu,Liou, J.J., Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD,IEEE Electron Device Letters, 2012V33N5PP 640 - 642 \r
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23) Shurong Dong*,Jian Wu,Meng Miao,Jie Zeng,Yan Han, Liou, J.J.,High-Holding-Voltage Silicon-Controlled Rectifier for ESD Applications, IEEE Electron Device Letters, 2012v33N10PP:1345 - 1347\r
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24) Jian Wu, Shurong Dong*,Mingliang Li, Meng Miao,Fei Ma,Jianfeng Zheng,Yan Han, A novel power-clamp assisted complementary MOSFET for robust ESD protection, Microelectronics Reliability, 2012V52N8PP1593–1597\r
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25) Meng Miao,Shurong Dong*,Jian Wu,Jie Zeng,Liou, J.J.,Fei Ma, Hongwei Li,Yan Han, Minimizing Multiple Triggering Effect in Diode-Triggered Silicon-Controlled Rectifiers for ESD Protection Applications, IEEE Electron Device Letters,2012,V33N6pp893 - 895\r
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26) Hao Jin, Shurong Dong*, Meng Miao, Juin Jei Liou, Cary Y. Yang, Breakdown voltage of ultrathin dielectric film subject to electrostatic discharge stress, Journal of Applied Physics. 2011(110)054516\r
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27) M.J. Wu, H. Jin*, S.R. Dong*, P.C. Jin, J.K. Luo and W.I. Milne, Extracting intrinsic parameters of film bulk acoustic resonators with different sizes of pads, Electronics Letters (highlight), 2011V47N16\r
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28) Yan Han, Bo Song, Shurong Dong*, Mingliang Li, Fei Ma, Meng Miao and Kehan Zhu, Study of current saturation behaviors in dual direction SCR for ESD application, Microelectronics Reliability,2011V 51pp. 332-336 2011\r
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29) Fei Ma, Yan Han*, Bo Song, Shurong Dong, Meng Miao, Jianfeng Zheng, Jian Wu, Kehan Zhu, Substrate-engineered GGNMOS for low trigger voltage ESD in 65 nm CMOS process, Microelectronics Reliability, 2011V51Pp. 2124-2128\r
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30) F. Ma, Y. Han, S. Dong, B. Song, M. Miao and K. Zhu, Investigation of boundary-MOS-triggered SCR structures for on-chip ESD protection. ELECTRONICS LETTERS 17th February 2011 Vol. 47 No. 4\r
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31) Jin, H., Dong, S.R.*,Luo, J.K.,Milne, W.I. Generalised Butterworth-Van Dyke equivalent circuit for thin-film bulk acoustic resonator, Electronics Letters (Interview highlight), 2011V47N7pp:424 - 426\r
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32) Dong, S.*, Li, M., Guo, W.,Han, Y., Huang, D.,Song, B. Complementation SCR for RF IC ESD protection, Electronics Letters,2010V46N3pp:213 - 214\r
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33) Zhiwei Liu, Juin J. Liou*, Shurong Dong, and Yan Han, Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications, IEEE Electron Device Letters, 2010V31N8PP845\r
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34) Bo Song, Yan Han*, Shurong Dong, Fei Ma, Mingliang Li, Meng Miao and Kehan Zhu Compact MOS-triggered SCR with faster turn-on speed for ESD protection , Microelectronics Reliability,2010V 50pp. 1393-1397\r
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35) Song, B.; Han, Y.; Li, M.; Dong, S.; Guo, W.; Huang, D.; Ma, F.; Miao, M.; Substrate-triggered GGNMOS in 65 nm CMOS process for ESD application, Electronics Letters (highlight), 2010V46N7 pp:518-520, 2010\r
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36) Huijin Zhang, Shurong Dong*, Weiwei Chen, and Yan Han, MIMO multiplexer based on film bulk acoustic resonator, IEEE Transactions on Consumer Electronics 2010pp. 805-810\r
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37) Wei-Wei Cheng, Shu-Rong Dong*, Yan Han, Hai-Feng Zhou, Shi-Heng Zhao, Hui-Jin Zhang, and Xiao-Xia Han, A low power, low phase noise FBAR oscillator, Integrated Ferroelectrics, 2009V105PP75-86\r
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38) Mingxu Huo, Qing Guo, Yan Han*, Lei Shen, Qi liu, Bo Song, Qingrong Ma, Kehan Zhu, Yehui Shen, Xiaoyang Du, and Shurong Dong, A case study of problems in JEDEC HBM ESD test standard, IEEE Transactions on Device and Materials Reliability, 2009V9N3\r
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39) Shi-Heng Zhao, Shu-Rong Dong*, Hui-Jin Zhang, Wei-Wei Cheng, Xiao-Xia Han, Modeling of RF filter component based on film bulk acoustic resonator, IEEE Transactions on Consumer electronics, 2009V33N2pp. 351-355\r
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40) Xiao-yang DU, Shu-rong DONG*, Yan HAN, Ming-xu HUO, DA-hai HUANG, Low-leakage diode-triggered silicon controlled rectifier for electrostatic discharge protection in 0.18-um CMOS process, Journal of Zhejiang University SCIENCE A, 2009 10(7):1060-1066\r
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41) Lifang Lou, Juin J. Liou*, Shurong Dong, Yan Han, Silicon controlled rectifier (SCR) compact modeling based on VBIC and Gummel-Poon models, Solid-State Electronics, 2009V 53pp. 195-203\r
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42) H. Jin, S. R. Dong*, D. M. Wang, Measurement of Dielectric Constant of Thin Film Materials at Microwave Frequencies, Journal of Electromagnetic Waves and Applications, 2009v23n5-6PP809-817\r
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43) Xiaoyang Du, Shurong Dong*, Yan Han, Juin J. Liou, Mingxu Huo, You Li, Qiang Cui, Dahai Huang, Demiao Wang, Evaluation of RF electrostatic discharge (ESD) protection in 0.18-um CMOS technology, Microelectronics Reliability, 2008V 48pp. 995-999 \r
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44) S. Dong*, X. Du, Y. Han, M. Huo, Q. Cui and D. Huang, Analysis of 65 nm technology grounded-gate NMOS for on-chp ESD protection application, Electronics Letters, 2008V44N19\r
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45) Xu Wenbin*, Dong Shurong*, Wang Demiao, Ren Gaochao, Investigation of microstructure evolution in Pt-doped TiO2 thin films deposited by rf magnetron sputtering, Physica B: Condensed Matter., 2008V403N17pp. 2698-2701\r
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46) Haifeng Zhou; Yan Han*; Shurong Dong, An ultra-low-voltage high-performance VCO in 0.13um CMOS, Journal of Electromagnetic Waves and Applications, 2008V22N17/18 pp.2417-2426\r
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47) XU Wen-Bin*, DONG Shu-rong*, WANG De-Miao, Modeling and Optimization for Deposition of SiOxNy films by ration-Frequency Reactive Sputtering, Chinese Physics Letters, 2007V24N9pp. 2681-2684\r
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48) F. YAN, T.J. ZHU*, X.B. ZHAO, S.R. DONG, Microstructure and thermoelectric properties of GeSbTe based layerd compounds, Applied Physics A 2007V88 pp. 425-428\r
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49) Feng Yan, Tiejun Zhu, Xinbing Zhao, Shurong Dong, A study of the crystallization kinetics of Ge-Te amorphous systems, Journal of University of Science and technology Beijing, 2007V14S1pp. 64-67\r
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50) CUI Qiang, HAN Yan, DONG Shu-rong, LIOU Juin-jie, A robust polysilicon-assisted SCR in ESD protection application, Journal of Zhejiang University SCIENCE A, 2007V 8N12PP:1879-1883