陈万军
近期热点
资料介绍
个人简历
男,副教授,生于1978年,博士。2007-2010年在香港科技大学从事博士后研究工作。2008.03年开始在电子科技大学微电子与固体电子学院工作。研究领域
1.微系统集成与三维封装测试2.集成电路设计与制造3.RF SOC设计近期论文
1.High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors”, Appl. Phys. Lett., vol. 92, 253501, 2008,SCI检索,第1作者2.Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally-off HEMT” , IEEE Electron Devices Letters, vol. 30, No.5 pp. 430-432, 2009, SCI检索,第1作者3.Monolithic Integration of Lateral Field-Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-mode Power Supply Converters”, International Electron Devices Meeting (IEDM 2008), San Francisco, pp.141-144, Dec. 15-17, 2008,顶级国际会议,第1作者4.Realizing high voltage SJ-LDMOS with non-uniform N-buried layer”, Solid-State Electronics, vol. 52 (2008), pp. 675-678. SCI检索,第1作者5.Analysis and reduction of the gate forward leakage current in AlGaN/GaN HEMTs employing energy-band modulation technology, Solid-State Electronics,2013.02,SCI检索,第1作者6.Investigation of device geometry- and temperature-dependent characteristics of AlGaN/GaN lateral field-effect rectifier, SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2013.01,SCI检索,第1作者7.High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance, IET Electronics Letters,2010.11,SCI检索,第1作者8.Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013,p1075-1081, SCI检索,第2作者9.Schottky-Ohmic Drain AlGaN/GaN Normally-Off HEMT with Reverse Drain Blocking Capability”, IEEE ELECTRON DEVICE LETTERS, vol. 31, No. 7, 2010.07,SCI检索,第2作者10.Characterization and analysis of the temperature-dependent on-resistance in AlGaN/GaN lateral field-effect rectifiers”, IEEE Transactions on Electron Devices, Vol. 57, No. 8, 2010.08,SCI检索,第2作者 相关热点