个人简历

北航集成电路科学与工程学院副院长，北航合肥创新研究院微纳科学与技术中心常务副主任。\r
\r
国家自然科学基金优秀青年基金获得者。中国科协“青年人才托举工程”入选者。中国电子学会优秀科技工作者。\r
\r
全国大学生集成电路创新创业大赛专家委员会成员。中国电子学会青年科学家俱乐部会员。获得2013年国家优秀留学生奖学金。\r
\r
北京市教育教学成果奖二等奖（个人排名4/10）、北航教学成果奖一等奖（个人排名4/9）\r
\r
2009年毕业于华中科技大学光电信息工程系获学士学位，2014年获得法国南巴黎大学物理学博士学位。2014年至2015年在法国国家科学院进行博士后研究。\r
\r
迄今出版学术书籍3部，在Nature Communications、Science Advances、Applied Physics Reviews、Advanced Science、ACS NANO、IEEE Electron Device Letters、IEEE trans. Circuits and Systems-I: Regular Papers等期刊上发表论文100余篇，“ESI高引用论文”1篇，1次国际期刊年度最佳论文奖，4次国际会议最佳论文奖。多次被DATE、IEEE-NANO、ISCAS等国际知名会议邀请报告。担任Nature系列、IEEE trans. Electron Devices、IEEE trans. Nanotechnology、Nanotechnology、IEEE trans. Multi-Scale Computing Systems等多部国际期刊审稿人。

研究领域

"研究领域包括自旋电子学、自旋存算一体器件、超低功耗集成电路设计、新型计算逻辑系统"

近期论文

开发开源的自旋电子器件模型库SPINLIB：http://www.spinlib.com\r
\r
X. Yang, Y. Zhang*, et al. “A Universal Compact Model for Spin-Transfer Torque-Driven Magnetization Switching in Magnetic Tunnel Junction”, IEEE Transactions on Electron Devices, vol. 69, 11, pp. 6453-6458, 2022. (https://ieeexplore.ieee.org/abstract/document/9911785)\r
\r
G. Wang, Y. Zhang*, et al. “Compact modeling of perpendicular-magnetic-anisotropy double-barrier magnetic tunnel junction with enhanced thermal stability recording structure”, IEEE Transactions on Electron Devices, vol. 66, 5, pp. 2431-2436, 2019. (https://ieeexplore.ieee.org/document/8683988)\r
\r
Y. Zhang, et al. “Compact Model of Subvolume MTJ and Its Design Application at Nanoscale Technology Nodes”, IEEE Transactions on Electron Devices, vol. 62, pp. 2048-2055, 2015. (https://ieeexplore.ieee.org/document/7078914)\r
\r
Y. Zhang, et al. “Compact Modeling of Perpendicular Anisotropy CoFeB/MgO Magnetic Tunnel Junction”, IEEE Transactions on Electron Devices, vol. 59, pp. 819-826, 2012. (https://ieeexplore.ieee.org/document/6125245) \r
\r
1）自旋信息操控机制：\r
\r
Z. Zhang, K. Lin, Y. Zhang*, et al. “Magnon scattering modulated by omnidirectional hopfion motion in antiferromagnets for meta-learning”, Science Advances, vol.9, eade7439, 2023. （首页亮点论文） （https://www.science.org/doi/10.1126/sciadv.ade7439）\r
\r
Z. Zheng#, Y. Zhang#*, et al.“Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient”, Nature Communications, vol.12, 4555, 2021. （https://www.nature.com/articles/s41467-021-24854-7）\r
\r
Y. Zhang*, et al.“Ferrimagnets for spintronic devices: From materials to applications”, Applied Physics Reviews, vol. 10, 011301, 2023. (亮点论文) （https://aip.scitation.org/doi/10.1063/5.0104618）\r
\r
K. Zhang, L. Chen, Y. Zhang*, et al.“Efficient and controllable magnetization switching induced by intermixing-enhanced bulk spin–orbit torque in ferromagnetic multilayers”, Applied Physics Reviews, vol. 9, 011407, 2022. (亮点论文) （https://aip.scitation.org/doi/10.1063/5.0067348）\r
\r
Z. Zheng, Z. Zhang, X. Feng, K. Zhang, Y. Zhang*, et al.“Anomalous Thermal-Assisted Spin–Orbit Torque-Induced Magnetization Switching for Energy-Efficient Logic-in-Memory”, ACS NANO, 16, 5, 8264–8272，2022. (https://doi.org/10.1021/acsnano.2c02031)\r
\r
Z. Zheng#, Y. Zhang#*, et al.“Enhanced Spin-Orbit Torque and Multilevel Current-Induced Switching in W/Co-Tb/Pt Heterostructure”, Physical Review Applied, vol. 12, 4, 044032, 2019. （https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.12.044032）\r
\r
Z. Zheng, Y. Zhang*, et al.“Perpendicular magnetization switching by large spin-orbit torques from sputtered Bi2Te3”, Chinese Physics B, vol. 29, 7, 078505, 2020. (封面论文) （http://cpb.iphy.ac.cn/EN/10.1088/1674-1056/ab9439）\r
\r
2）存算一体器件：\r
\r
K. Zhang, X. Jia, K. Cao, J. Wang, Y. Zhang*, et al. “High On/Off Ratio Spintronic Multi-Level Memory Unit for Deep Neural Network”, Advanced Science, 2103357, 2022. (封面论文)（https://onlinelibrary.wiley.com/doi/10.1002/advs.202103357）\r
\r
K. Zhang, K. Cao, Y. Zhang*, et al.“Rectified Tunnel Magnetoresistance Device With High On/Off Ratio for In-Memory Computing”, IEEE Electron Device Letters, vol. 41, 6, pp. 928-931, 2020. (封面论文)（https://ieeexplore.ieee.org/document/9064521）\r
\r
Z. Zhang, Y. Zhu, Y. Zhang*, et al.“Skyrmion-Based Ultra-Low Power Electric-Field-Controlled Reconfigurable (SUPER) Logic Gate”, IEEE Electron Device Letters, vol. 40, 12, pp. 1984-1987, 2019. (封面论文) （https://ieeexplore.ieee.org/document/8864055）\r
\r
Q. Yang, Z. Zhang, X. Jiang, X. Wang*, Y. Zhang*, et al.“Realization of High Spin Injection Through Chiral Molecules and Its Application in Logic Device”, IEEE Electron Device Letters, vol. 43, 11, pp. 1862-1865, 2022. （https://ieeexplore.ieee.org/abstract/document/9905542）\r
\r
Z. Zhang, Y. Zhang*, et al.“Ultra-Low-Power Reservoir Computing Based on Synthetic Antiferromagnetic Skyrmion Pairs”, IEEE Electron Device Letters, vol. 43, 9, pp. 1567-1570, 2022. （https://ieeexplore.ieee.org/document/9844710）\r
\r
Z. Zhang, Z. Zheng, Y. Zhang*, et al.“3D Ferrimagnetic Device for Multi-Bit Storage and Efficient In-Memory Computing”, IEEE Electron Device Letters, vol. 42, 2, pp. 152-155, 2021. （https://ieeexplore.ieee.org/document/9309002）\r
\r
G. Wang, Y. Zhang*, et al.“Ultrafast and Energy-Efficient Ferrimagnetic XNOR Logic Gates for Binary Neural Networks”, IEEE Electron Device Letters, vol. 42, 4, pp. 621-624, 2021. （https://ieeexplore.ieee.org/document/9363935）\r
\r
K. Zhang, Y. Zhang*, et al.“Large Magnetoresistance and 15 Boolean Logic Functions Based on a ZnCoO Film and Diode Combined Device”, Advanced Electronic Materials, vol. 5, 3, 1800812, 2019. (封面论文) （https://onlinelibrary.wiley.com/doi/10.1002/aelm.201800812）\r
\r
\r
3）新型低功耗电路与系统：\r
\r
J. Wang, Y. Zhang*, et al.“Reconfigurable Bit-Serial Operation Using Toggle SOT-MRAM for High-Performance Computing in Memory Architecture”, IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 69, 11, 4535-4545, 2022. （https://ieeexplore.ieee.org/document/9844140）\r
\r
Y. Zhang*, et al.“Time-Domain Computing in Memory Using Spintronics for Energy-Efficient Convolutional Neural Network”, IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 68, 3, 1193-1205, 2021. （https://ieeexplore.ieee.org/document/9345759）\r
\r
J. Wang, Y. Zhang*, et al.“A Self-Matching Complementary-Reference Sensing Scheme for High-Speed and Reliable Toggle Spin Torque MRAM”, IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 67, 12, 4247-4258, 2020. （https://ieeexplore.ieee.org/document/9190048）\r
\r
G. Wang, Y. Zhang*, et al.“Ultra-Dense Ring-Shaped Racetrack Memory Cache Design”, IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 66, 1, 215-225, 2019. （https://ieeexplore.ieee.org/document/8458153）\r
\r
Y. Zhang, et al. “Perspectives of Racetrack Memory for Large-Capacity On-Chip Memory: From Device to System”, IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 63, 5, 629-638, 2016. （https://ieeexplore.ieee.org/document/7440825）
目前担任国际期刊IEEE trans. Circuits and Systems I: Regular Papers和IEEE Access副主编。IEEE Senior Member。2017年入选中国科协“青年人才托举工程”。中国电子学会青年科学家俱乐部会员。全国大学生集成电路创新创业大赛专家委员会成员。