个人简历

博士，教授，博士生导师，北京航空航天大学物理学院副院长，美国Stanford大学访问学者，2008年度教育部新世纪优秀人才。分别在香港中文大学，香港城市大学，美国斯坦福大学从事研究工作。2007年3月到北京航空航天大学物理学院工作，现主要从事类脑智能器件及固态电子等方面的研究。到目前为止，已发表SCI检索学术论文60余篇，分别在Applied Physics Letters、Optical letters、IEEE Electron device letters、Journal of Applied physics等学术期刊上。作为项目负责人，主持承担脑科学研究专项、多项国家自然科学基金项目、教育部新世纪人才计划等科研项目。 \r
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教育背景\r
兰州大学物理系电子材料与元器件专业本科；北京工业大学材料学院材料物理与化学专业博士；香港城市大学应用物理系博士后\r
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工作经历\r
香港中文大学电子工程系、美国斯坦福大学访问学者；2007年至今在北京航空航天大学物理学院工作\r
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奖励与荣誉\r
荣获北京市优秀教师，教育部新世纪优秀人才，第十届“我爱我师”十佳教师，优秀班主任一等奖，校优秀研究生指导教师等

研究领域

类脑智能器件与物理""

近期论文

X. Zhang,A. P. Huang,Q. Hu, Z. Xiao, P.K. Chu, Neuromorphic Computing with Memristor Crossbar, Phys.Status Solidi A-Appl. Mat. 215 (2018) 1700875.\r
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Y. Xin,A. P. Huang,Q. Hu, H. Shi, M. Wang, Z. Xiao, X. Zheng, Z. Di, P.K. Chu, Barrier Reductionof Lithium Ion Tunneling through Graphene with Hybrid Defects: First‐PrinciplesCalculations, Adv. Theor. Simul. 1 (2018) 201870004.\r
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A. P. Huang, X. Zhang, Y. Li, M. Wang, Z. Xiao, Fermi-levelpinning in full metal/high-k/SiO2/Si stacks, J. Appl. Phys. 122 (2017) 195702.\r
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X. H. Zheng, M. Zhang,A. P. Huang, Z. S. Xiao,P. K. Chu, X. Wang, Z. F. Di,Pattern transitionfrom nanohoneycomb to nanograss on germanium by gallium ion bombardment,Chin. Phys. B24(2015) 460.\r
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X. D. Yang,M. Chu,A. P. Huang,andS. Thompson, Effects of mechanical-bending and process induced stresseson metal effective work function,Solid State Electron.79 (2013) 142;\r
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A. P. Huang*, X. H. Zheng, Z. S. Xiao, M. Wang, and Paul K. Chu,Interface Dipole Engineering in Metal Gate /High-kStacks,Chin. Sci. Bull. 57(2012) 2872.\r
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X. H. Zheng,A. P. Huang*, Z. S. Xiao,X. Y. Liu, M. Wang, Z. W. Wu, and Paul K. Chu, Diffusion Behavior of DualCapping Layers in TiN/LaN/AlN/HfSiOx/Si Stack,Appl. Phys. Lett.99(2011) 131914.\r
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A. P. Huang*, X. H. Zheng, Z. S. Xiao, Z. C. Yang, M. Wang, and Paul K. Chu,Flat Band Voltage Shift in P-Channel Metal Oxide Semiconductor Field EffectTransistors,Chin. Phys. B20(2011) 097303.\r
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Z. C. Yang,A. P. Huang*, X. H. Zheng,Z. S. Xiao, X. Y. Liu, X. W. Zhang, Paul K. Chu and W. W. Wang, Fermi-level pinningat metal/high-k interface influenced by electron state density of metal gate,IEEEElectron. Dev. Lett.31 (2010) 1101.\r
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X. H. Zheng,A. P. Huang*, Z. S.Xiao, Z. C. Yang, M. Wang, X. W. Zhang, W. W. Wang and Paul K. Chu, Origin of flat-bandvoltage sharp roll-off in metal gate/high-k/ultrathin SiO2/Si pMOS stacks,Appl. Phys. Lett.97 (2010) 132908.\r
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A. P. Huang*, Z. C. Yang and Paul K. Chu, Hafnium-based high-k gate dielectrics:Advances in Solid State Circuit Tech nologies,Book ChapterISBN:978-953-307-086-5 (2010) p333-p350.\r
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Z. C. Yang,A. P. Huang*, L. Yan,Z. S. Xiao, X. W. Zhang, Paul K. Chu and W. W. Wang, Role of interface dipolein metal gate/high-keffective work function modulation by aluminumincorporation,Appl. Phys. Lett.94 (2009) 252905.\r
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A. P. Huang*, X. Y. Liu and P. K. Chu, Surface modification of Si-basedmaterials by plasma gas treatments,Book ChapterISBN:978-81-308-0285-5 (2009) p335-p387.\r
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A. P. Huang*, Z. S. Xiao, X. Y. Liu, L. Wang and P. K. Chu, Role of fluorine inplasma nitridated ZrO2thin films under irradiation,Appl.Phys. Lett.93 (2008) 122907.\r
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A. P. Huangand P. K. Chu, Interfacial compound suppression and dielectric propertiesenhancement of F-N-codoped ZrO2thin films,Appl. Phys. Lett.90 (2007) 082906.\r
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A. P. Huang, L. Wang, J. B. Xu and P. K. Chu, Plasma nitridated high-kpolycrystallinearray induced by electron irradiation,Nanotech.17(2006)4379.\r
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A. P. Huang, P. K. Chu and X. L. Wu, Enhanced electron field emission fromoriented columnar AlN and mechanism,Appl. Phys. Lett.88 (2006) 251103.\r
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A. P. Huang, P. K. Chu，L. Wang, W. Y. Cheung, J. B. Xu and S. P. Wong, Fabrication of rutileTiO2thin films by low-temperature, bias-assisted cathodic arc depositionand their dielectric properties,J. Mater. Res.21(2006) 844.\r
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A. P. Huang, and Paul K. Chu, Improvement of Interfacial and DielectricProperties of Sputtered Ta2O5Thin Films by SubstrateBias Assistance and the Underlying Mechanism,J. Appl. Phys.97 (2005)114106.