个人简历

北京航空航天大学微电子学院教师。2014年获青岛大学微电子学专业学士学位，同年进入北京航空航天大学电子信息工程学院攻读博士学位。2015-2019年同时在中国科学院微电子研究所先导工艺研发中心联合培养，2019年获北京航空航天大学微电子学与固体电子专业博士学位，随后在北京航空航天大学微电子学院任教。

研究领域

STT/SOT-MRAM工艺研究；自旋电子器件设计、制备及测试表征；“存算一体”技术研究""

近期论文

W. Cai, M. Wang, K. Cao*, H. Yang, S. Peng, H. Li and W. Zhao*, Stateful implication logic based on perpendicular magnetic tunnel junctions. Sci. China Inf. Sci., 2022, 65, 1–7.\r
\r
Z. Guo, J. Yin, Y. Bai, D. Zhu, K. Shi, G. Wang, K. Cao* and W. Zhao*, Spintronics for Energy- Efficient Computing: An Overview and Outlook. Proc. IEEE, 2021, 109, 1398–1417.\r
\r
Y. Wang, D. Zhao, Y. Chen, Z. Fu, H. Zhang, Z. Zhou, Y. Wan, C. Pan, F. Liu, Y. Yuan and K. Cao*, Fabrication and Reliability Analysis of Nanoscale Magnetic Tunnel Junctions. Spin, 2021, 11, 1–6.\r
\r
D. Zhu, Z. Guo, A. Du, D. Xiong, R. Xiao, W. Cai, K. Shi, S. Peng, K. Cao, S. Lu, D. Zhu, G. Wang, H. Liu, Q. Leng and W. Zhao, First demonstration of three terminal MRAM devices with immunity to magnetic fields and 10 ns field free switching by electrical manipulation of exchange bias. Int. Electron Devices Meet., 2021, 17.5.1-17.5.4.\r
\r
W. Cai, K. Shi, Y. Zhuo, D. Zhu, Y. Huang, J. Yin, K. Cao, Z. Wang, Z. Guo, Z. Wang, G. Wang and W. Zhao*, Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques. IEEE Electron Device Lett., 2021, 42, 704–707.\r
\r
K. Shi, W. Cai, Y. Zhuo, D. Zhu, Y. Huang, J. Yin, K. Cao, Z. Wang, Z. Guo, Z. Wanga, G. Wangb and W. Zhao, Experimental Demonstration of NAND-like spin-torque Memory Unit. IEEE Electron Device Lett., 2021, 42, 513–516.\r
\r
R. Chen, X. Wang, H. Cheng, K.-J. Lee, D. Xiong, J.-Y. Kim, S. Li, H. Yang, H. Zhang, K. Cao, M. Kläui, S. Peng, X. Zhang and W. Zhao*, Large Dzyaloshinskii-Moriya interaction and room-temperature nanoscale skyrmions in CoFeB/MgO heterostructures. Cell Reports Phys. Sci., 2021, 2, 1–18.\r
\r
J. Wei, B. Fang, W. Wu, K. Cao*, H. H. Chen, Y. Zhang, Z. Zeng, H. Wu, M. Bai and W. Zhao, Amplitude and frequency modulation based on memristor-controlled spin nano-oscillators. Nanotechnology, 2020, 31, 1–7.\r
\r
K. Zhang, K. Cao, Y. Zhang, Z. Huang, W. Cai, J. Wang, J. Nan, G. Wang, Z. Zheng, L. Chen, Z. Zhang, Y. Zhang, S. Yan and W. Zhao, Rectified Tunnel Magnetoresistance Device with High On/Off Ratio for In-Memory Computing. IEEE Electron Device Lett., 2020, 41, 928–931.\r
\r
K. Cao, H. Cui, Y. Zhang, H. Xiong, J. Wei, L. Wang, W. Cai, Y. Liu, P. Liu, X. He, J. Li, G. Bai, J. Yu, J. Han, J. Gao, Q. Jiang, Y. Hu, L. Li, B. Tang, Y. Zhang, P. Zhang, Q. Zhang, S. Liu, Y. Lu, T. Yang, J. Li, H. H. Radamson, C. Zhao and W. Zhao, Novel metallization processes for sub-100 nm magnetic tunnel junction devices. Microelectron. Eng., 2019, 209, 6–9.\r
\r
J. Wei, K. Cao, H. Cui, K. Shi, W. Cai, Y. Jing, C. Zhao and W. Zhao, All Perpendicular Spin Nano-oscillators with Composite Free Layer. SPIN, 2019, 9, 1940010-4