个人简历

张冠张
职称：助理教授
北京大学深圳研究生院 信息工程学院 助理教授（博导）
国立中山大学 材料与光电学系 博士后研究员
国立中山大学 材料与光电学系 博士
（导师：施 敏 院士 美国国家工程院、中国工程院外籍院士）
东海大学 化学系 学士
研究主题不仅致力于创新性，并且有多项应用技术突破，透过各种材料分析与电性量测技术，达到将超临界流体创新应用在电子材料领域的目标。
讲授课程：
半导体器件与工艺
半导体测试与分析
学术成果：
本人近年(2009~迄今)共发表SCI国际期刊115篇，第一作者和通讯作者发表的期刊共30篇SCI国际期刊，H-index为24，被引用总次数: 1402次。
Materials Today（IF：21.7）1篇 (Invited review article)
Nano Letters (IF：13.59) 1 篇
ACS APPLIED MATERIALS & INTERFACES (IF: 7.50) 4 篇
Nano Scale (IF: 7.37) 2 篇
Applied Physics Letters（IF：3.41）23篇
IEEE Electron Device Letter (IF: 3.05) 37 篇
相关研究成果并获得美国专利5项，中国台湾专利19项，中国专利公开2项 。

研究领域

1. 阻变存储器 2. 超临界流体 3. 类神经型态器件

近期论文

1、T. C. Chang, K. C. Chang, T. M. Tsai, T. J. Chu, and Simon M. Sze, “Resistance Random Access Memory”, Materials Today, 19(5), 254-264 (2016). (IF：21.7)
2、Lin, CY, Chen, PH, Chang, TC, K. C. Chang*, Zhang, SD, Tsai, TM, Pan, CH, Chen, MC, “Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode”, NANOSCALE, 9(25), 8586-8590 (2017) (IF：7.37)
3、Chen, BW, Chang, TC, K. C. Chang*, Hung, YJ, Huang, SP, Chen, HM, Liao, PY, Lin, YH , Huang, HC, Chiang, HC, “Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors”, ACS APPLIED MATERIALS & INTERFACES, 9 (13), 11942-11949 (2017) (IF：7.50)
4、Tseng, YT, Chen, PH, Chang, TC, K. C. Chang*, Tsai, TM, Shih, CC, Huang, HC, Yang, CC, Lin, CY, Wu, CH, “Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High-k Spacer Structure”, ADVANCED ELECTRONIC MATERIALS, 3(9), (2017) (IF：4.19)
5、Chen, PH, Chang, TC, K. C. Chang*, Tsai, TM, Pan, CH, Shih, CC, Wu, CH, Yang, CC, Chen, WC, Lin, JC, “Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications”, APPLIED SURFACE SCIENCE, 414, 224-229 (2017) (IF：3.39)
6、Lu, YH, Chang, TC, Chen, LH, Lin, YS, Liu, XW, Liao, JC, Lin, CY, Lien, CH, K. C. Chang*, Zhang, SD, “Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs”, IEEE ELECTRON DEVICE LETTERS, 38(7), 835-838 (2017) (IF：3.05)
7、Lin, CY, Chang, TC,Liu, KJ,Chen, LH, Tsai, JY, Chen, CE, Lu, YH, Liu, HW, Liao, JC, K. C. Chang*, “Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs”, IEEE ELECTRON DEVICE LETTERS, 38(6), 705-707 (2017) (IF：3.05)
8、Liao, PY, Chang, TC, Chen, YJ,Su, WC,Chen, BW,Chen, LH,Hsieh, TY, Yang, CY, K. C. Chang*, Zhang, SD,“The effect of device electrode geometry on performance after hot-carrier stress in amorphous In-Ga-Zn-O thin film transistors with different via-contact structures”, Appl. Phys. Lett., 110(20), (2017) (IF：3.41)
9、Wu, CH, Chang, TC, Tsai, TM, K. C. Chang*, Chu, TJ, Pan, CH, Su, YT, Chen, PH, Lin, SK, Hu, SJ, “Effect of charge quantity on conduction mechanism of high-and low-resistance states during forming process in a one-transistor-one-resistor resistance random access memory”, APPLIED PHYSICS EXPRESS, 10(5), (2017) (IF：2.67)
10、W. C. Chen, T. M. Tsai, K. C. Chang*, H. L. Chen, Y. T. Su, C. C. Yang, M. C. Chen, H. C. Huang, and Simon M. Sze, “Influence of Ammonia on Amorphous Carbon Resistive Random Access Memory”, IEEE Electron Device Lett., 38(4), 453-456 (2017) (IF：3.05)
11、Y. C. Chien, T. C. Chang, H. C. Chiang, H. M. Chen, Y. C. Tsao, C. C. Shih, B. W. Chen, P. Y. Liao, T. Y. Chu, Y. C. Yang, Y. J. Hung, T. M. Tsai, and K. C. Chang*, “Role of H2O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors”, IEEE Electron Device Lett., 38(4), 469-472 (2017) (IF：3.05)
12、W. C. Su, T. C. Chang, P. Y. Liao, Y. J. Chen, B. W. Chen, T. Y. Hsieh, C. I. Yang, Y. Y. Huang, H. M. Chang, S. C. Chiang, K. C. Chang*, and T. M. Tsai, “The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors”, Appl. Phys. Lett., 110, 103502 (2017). (IF：3.41)
13、C. H. Pan, T. C. Chang, T. M. Tsai, K. C. Chang*, P. H. Chen, S. W. Chang-Chien, M. C. Chen, H. C. Huang, H. Q. Wu, N. Deng, H. Qian, S. M. Sze, “Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3:ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence”, Appl. Phys. Lett., 109(18), 183509 (2016). (IF：3.41)
14、T. M. Tsai, K. C. Chang*, T. C. Chang, R. Zhang, T. Wang, C. H. Pan, K. H. Chen, H. M. Chen, M. C. Chen, Y. T. Tseng, P. H. Chen, I. Lo, J. C. Zheng, J. C. Lou, S. M. Sze, “Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory”, IEEE Electron Device Lett., 37(5), 584-587 (2016). (IF: 3.05)
15、K. C. Chang*, T. C. Chang, T. M. Tsai1, R. Zhang, Y. C. Hung, Y. E. Syu, Y. F. Chang, M. C. Chen, T. J. Chu, H. L. Chen, C. H. Pan, C. C. Shih, J. C. Zheng and S. M. Sze, “Physical and Chemical Mechanisms in Oxide-based Resistance Random Access Memory”, Nanoscale Res. Lett., 10, 120 (2015). (IF: 2.83）
16、K. C. Chang*, T. M. Tsai, T. C. Chang, R. Zhang, K. H. Chen, J. H. Chen, M. C. Chen, H. C. Huang, W. Zhang, C. Y. Lin, Y. T. Tseng, H. C. Lin, J. C. Zheng, and S. M. Sze, “Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid”, IEEE Electron Device Lett., 36(6), 558-560 (2015). (IF: 3.05)
17、C. Y. Lin, K. C. Chang*, T. C. Chang, T. M. Tsai, C. H. Pan, R. Zhang, K. H. Liu, H. M. Chen, Y. T. Tseng, Y. C. Hung, Y. E. Syu, J. C. Zheng, Y. L. Wang, W. Zhang, and S. M. Sze, “Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory”, IEEE Electron Device Lett., 36(6), 564-566 (2015). (IF: 3.05)
18、W. Zhang, Y. Hu, T. C. Chang, T. M. Tsai, K. C. Chang*, H. L. Chen, Y. T. Su, R. Zhang, Y. C. Hung, Y. E. Syu, M. C. Chen, J. C. Zheng, H. C. Lin, and S. M. Sze, “Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory”, IEEE Electron Device Lett., 36(6), 552-554 (2015). (IF: 3.05)
19、Y. T. Tseng, T. M. Tsai, T. C. Chang, C. C. Shih, K. C. Chang*, R. Zhang, K. H. Chen, J. H. Chen, Y. C. Li, C. Y. Lin, Y. C. Hung, Y. E. Syu, J. C. Zheng, and Simon M. Sze, “Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory”, Appl. Phys. Lett., 106, 223505 (2015). (IF：3.41）
20、K. C. Chang, T. M. Tsai, T. C. Chang, K. H. Chen, R. Zhang, Z. Y. Wang, J. H. Chen, T. F. Young, M. C. Chen, T. J. Chu, S. Y. Huang, Y. E. Syu, D. H. Bao,; S. M. Sze, “Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory”, IEEE Electron Device Lett., 35(5), 530-532 (2014). (IF: 3.05)
21、K. C. Chang, J. H. Chen, T. M. Tsai, T. C. Chang, S. Y. Huang, R. Zhang, K. H. Chen, Y. E. Syu, G. W. Chang, T. J. Chu, G. R. Liu, Y. T. Su, M. C. Chen, J. H. Pan, K. H. Liao, Y. H. Tai, T. F. Young, S. M. Sze, C. F. Ai, M. C. Wang, J. W. Huang, “Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment”, J. Supercrit. Fluids, 85, 183-189 (2014). (IF: 2.99)
22、K. C. Chang, R. Zhang, T. C. Chang, T. M. Tsai, J. C. Lou, J. H. Chen, T. F. Young, M. C. Chen, Y. L. Yang, Y. C. Pan, G. W. Chang, T. J. Chu, C. C. Shih, J. Y. Chen, C. H. Pan, Y. T. Su, Y. E. Syu, Y. H. Tai, and Simon M. Sze, “Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices”, IEEE Electron Device Lett., 34(5), 677-679 (2013). (IF: 3.05)
23、K. C. Chang, T. M. Tsai, T. C. Chang, H. H. Wu, J. H. Chen, Y. E. Syu, G. W. Chang, T. J. Chu, G. R. Liu, Y. T. Su, M. C. Chen, J. H. Pan, J. Y. Chen, C. W. Tung, H. C. Huang, Y. H. Tai, D. S. Gan, Simon M. Sze, “Characteristics and Mechanisms of Silicon Oxide Based Resistance Random Access Memory”, IEEE Electron Device Lett. , 34(3), 399-401 (2013). (IF: 3.05)
24、K. C. Chang, T. M. Tsai, T. C. Chang, Senior Member, IEEE, H. H. Wu, K. H. Chen, J. H. Chen, T. F. Young, T. J. Chu, J. Y. Chen, C. H. Pan, Y. T. Su, Y. E. Syu, C. W. Tung, G. W. Chang, M. C. Chen, H. C. Huang, Y. H. Tai, D. S. Gan, J. J. Wu, Y. Hu, and Simon M. Sze, “Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices”, IEEE Electron Device Lett., 34(4), 511-513 (2013). (IF: 3.05)
25、K. C. Chang, T. M. Tsai, R. Zhang, T. C. Chang, K. H. Chen, J. H. Chen, T. F. Young, J. C. Lou , T. J. Chu, C. C. Shih, J. H. Pan, Y. T. Su, Y. E. Syu, C. W. Tung, M. C. Chen, J. J. Wu, Y. Hu, S. M. Sze, “Electrical Conduction Mechanism of Zn:SiOx Resistance Random Access Memory with Supercritical CO2 Fluid Process”, Appl. Phys. Lett. 103, 083509 (2013). (IF：3.41）
26、K. C. Chang, C. H. Pan, T. C. Chang, T. M. Tsai, R. Zhang, J. C. Lou, T. F. Young, J. H. Chen, C. C. Shih, T. J. Chu, J. Y. Chen, Y. T. Su, J. P. Jiang, K. H. Chen, H. C. Huang, Y. E. Syu, D. S. Gan, Simon M. Sze, “Hopping Effect of Hydrogen-doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment”, IEEE Electron Device Lett., 34(5), 617-619 (2013). (IF: 3.05)
27、K. C. Chang, J. W. Huang, T. C. Chang, T. M. Tsai, K. H. Chen, T. F. Young, J. H. Chen, R. Zhang, J. C. Lou, S. Y. Huang, Y. C. Pan, H. C. Huang, Y. E. Syu, D. S. Gan, D. H. Bao, S. M. Sze, “Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer”, Nanoscale Res. Lett., 8, 523 (2013). (IF: 2.83）
28、K. C. Chang, T. M. Tsai, T. C. Chang, Y. E. Syu, K. H. Liao, S. L. Chuang, C. H. Li, D. S. Gan and S. M. Sze, “The Effect of Silicon Oxide Based RRAM with Tin Doping”, Electrochem. and Solid-State Lett., 15(3), H65-H68 (2012). (IF: 2.32)
29、K. C. Chang, T. M. Tsai, T. C. Chang, Y. E. Syu, Chia-C. Wang, S. K. Liu, S. L. Chuang, C. H. Li, D. S. Gan and S. M. Sze, “Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment”, Appl. Phys. Lett., 99(26), 263501 (2011). (IF：3.41）
30、K. C. Chang, T. M. Tsai, T. C. Chang, Y. E. Syu, H. C. Huang, Y. C. Hung, T. F. Young, D. S. Gan and N. J. Ho, “Low-Temperature Synthesis of ZnO Nanotubes by Supercritical CO2 Fluid Treatment”, Electrochem. and Solid-State Lett., 14 (9), K47-K50 (2011). (IF: 2.32)