个人简历

学位\r
博士学位 (澳大利亚，悉尼，Macquarie 大学物理系，2000年)\r
硕士学位 (北京，中国科学院物理研究所，1992年)\r
学士学位 (河南师范大学物理系，1983年)\r
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工作经历\r
2001.6--现在：教授，博士生导师，北京大学物理学院\r
2000.6--2001.6: 博士后，香港科技大学物理系\r
1999.12--2000.5: 博士后，澳大利亚Macquarie 大学物理系\r
1997.2--1999.12: 博士研究生，Macquarie大学物理系\r
1993.11--1997.1: 1993年11月被河南省人民政府破格晋升副教授，硕士研究生导师，河南师范大学物理系\r
1992.2--1993.10: 讲师，河南师范大学物理系\r
1989.9--1992.1: 硕士研究生，中国科学院物理研究所

研究领域

"""""1. 凝聚态理论 \r
2. 计算物理\r
3. 低维半导体物理 \r
4. 半导体光学和电子学"

近期论文

Design of Lead-Free and Stable Two-Dimensional Dion−Jacobson-Type Chalcogenide Perovskite A'La2B3S10 (A'=Ba/Sr/Ca; B=Hf/Zr) with Optimal Band Gap, Strong Optical Absorption, and High Efficiency for Photovoltaics. Chem. Mater., 32, 2450-2460, 2020\r
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Two-Dimensional 111-Type In-Based Halide Perovskite Cs3In2X9 (X=Cl, Br, I) with Optimal Band Gap for Photovoltaics and Defect-Insensitive Blue Emission. Phys. Rev. Applied, 13, 024031, 2020, 10.1103/PhysRevApplied.13.024031\r
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2D Ca3Sn2S7 Chalcogenide Perovskite: A Graphene-Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7×104 cm2 V-1 s-1. Adv. Mater., 31, 1905643, 2019\r
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Optimized band gap and fast interlayer charge transfer in two-dimensional perovskite oxynitride Ba2NbO3N and Sr2NbO3N/Ba2NbO3N bonded heterostructure visible-light photocatalysts for overall water splitting. Journal of Colloid and Interface Science, 546, 20-31, 2019\r
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Promising photovoltaic and solid-state-lighting materials: two-dimensional Ruddlesden-Popper type lead-free halide double perovskites Csn+1Inn/2Sbn/2I3n+1 (n=3) and Csn+1Inn/2Sbn/2Cl3n+1/Csm+1Cum/2Bim/2Cl3m+1 (n=3, m=1). J. Mater. Chem. C, 6, 11575-11586, 2018, 10.1039/c8tc03926g\r
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Anomalous Pressure Characteristics of Defects in Hexagonal Boron Nitride Flakes. ACS Nano, 12, 7127−7133, 2018\r
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Enhancement of photoluminescence and hole mobility in 1- to 5-layer InSe due to the top valence-band inversion: strain effect. Nanoscale, 10, 11441-11451, 2018, 10.1039/c8nr03172j\r
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Modulation of electronic and magnetic properties in InSe nanoribbons: edge effect. Nanotechnology, 29, 205708, 2018\r
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Two-dimensional n-InSe/p-GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance. Phys. Rev. B, 97, 15416, 2018, 10.1103/PhysRevB.97.115416\r
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Enhancement of hole mobility in InSe monolayer via InSe and black phosphorus heterostructure. Nanoscale, 9, 14682–14689, 2017, 10.1039/c7nr02725g\r
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Origin of the wide band gap from 0.6 to 2.3 eV in photovoltaic material InN: quantum confinement from surface nanostructure. J. Mater. Chem. A, 4, 17412-17418, 2016, 10.1039/c6ta07700e\r
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Anomalous Light-Emission and Wide Photoluminescence Spectra in Graphene Quantum Dot: Quantum Confinement from Edge Microstructure. J. Phys. Chem. Lett., 7, 2888-2892, 2016, 10.1021/acs.jpclett.6b01309\r
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Band Gap Opening of Graphene by Forming Heterojunctions with 2D Carbonitrides Nitrogenated Holey Graphene, g-C3N4, and g-CN: Electric Field Effect. J. Phys. Chem. C, 120, 11299–11305, 2016, 10.1021/acs.jpcc.6b03308\r
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Improvement of n-type conductivity in hexagonal boron nitride monolayer by doping, strain and adsorption. RSC Advances, 6, 29190-29196, 2016, 10.1039/c5ra25141a\r
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Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations. Sci. Rep., 6, 21786, 2016, 10.1038/srep21786\r
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Breakthrough of the p-type doping bottleneck in ZnO by inserting ultrathin ZnX (X=S, Se and Te) layer doped with NX or AgZn. J. Phys. D: Appl. Phys., 49, 095104, 2016, 10.1088/0022-3727/49/9/095104\r
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Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect. ACS Nano, 9, 9276-9283, 2015, 10.1021/acsnano.5b04158\r
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Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m/(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation. New J. Phys., 16, 113065, 2014, 10.1088/1367-2630/16/11/113065\r
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Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect. Sci. Rep., 4, 6710, 2014, 10.1038/srep06710\r
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Light emission from several-atom In-N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells. Acta Materialia, 59, 2773-2782, 2011, 10.1016/j.actamat.2011.01.016\r