个人简历

2020年加入北京大学人工智能研究院及微纳电子学系
。
2016年博士毕业于清华大学，同年赴米兰理工大学做博士后。一直从事阻变存储器（忆阻器）相关研究，具有跨学科的研究经验，包含底层的器件物理、材料，及上层的电路、算法、应用等方面。近三年的工作发表在PNAS、Science Advances、Nature Communications、Advanced Materials及IEEE T-ED等期刊，
代表性研究成果如：
1. 提出一类存内计算电路，实现一步解线性方程组、特征向量及微分方程；并证明其时间复杂度为O(1)，优于传统数字计算和量子计算；
2. 提出一类存内计算电路，一步训练线性回归、逻辑回归神经网络等机器学习算法；
3. 提出“状态神经网络”概念，实现最简的神经网络硬件和状态逻辑运算；
2018年获米兰理工大学和德勤举办的创业大赛的Disruptive Innovation Prize，2019年获意大利政府颁发的Intellectual Property Award。
此前的学习及工作经历包括：
I joined Institute for Artificial Intelligence and Institute of Microelectronics at Peking University in 2020. My education and research experience include:
2016 - 2020，米兰理工大学，博士后（Postdoc, Politecnico di Milano）
2011 - 2016，清华大学，获博士学位（Ph.D., Tsinghua Univ.）
2007 - 2011，南开大学，获学士学位（B.S., Nankai Univ.）
从事微电子器件和电路研究，具体为新型存储器和存内计算。 近三年的研究成果发表在PNAS、Science Advances、Nature Communications、Advanced Materials以及IEEE T-ED等期刊，申请PCT专利1项（2019年意大利年度最佳专利）。
I am working on microelectronic devices and circuits, specifically on emerging resistive memory and in-memory computing. You can find my research papers published in PNAS, Sci. Adv, Nat. Commun., Adv. Mater., IEEE T-ED and so on. For a complete list, please refer to the Publications section. I have 1 patent pending, which was recognized as the best ICT patent of Italy in 2019.
担任IEEE EDL、IEEE T-ED、IEEE T-CAS、IEEE T-Nano、Nanoscale等期刊，ISCAS、AICAS等国际会议的审稿人。
I review papers for scientific journals such as IEEE EDL, IEEE T-ED, IEEE T-CAS, IEEE T-Nano, Nanoscale, and for conferences such as ISCAS, AICAS.
招收博士后、2021级硕士/博士研究生，同时欢迎本科生加入团队一起工作！
具有跨学科的研究经验，包括底层的器件物理、材料，及上层的电路、人工智能算法和应用等方面，欢迎不同背景的有志青年申请、加入！
Now we have multiple open positions for postdoc and graduate students. PKU undergraduate students are warmly welcome to join us as well.
Also, my research experience has been quite interdisciplinary, ranging from underlying device physics and materials, to electronic circuits, machine learning algorithms and applications, please people with different backgrounds feel free to contact me.

目前的研究兴趣主要包括：
My current research interests include:
基于忆阻器阻变动力学的计算模型（如前馈神经网络、循环神经网络）及应用
基于忆阻器阵列的线性代数计算加速方案，及存内计算的计算复杂度研究
存内机器学习，及多任务、通用型的存内机器学习加速处理器
高一致性、高稳定性的新型阻变材料及器件
Honors/荣誉及奖励
2019年，与Daniele Ielmini教授、Giacomo Pedretti博士组成的团队获得意大利经济发展部颁发的Intellectual Property Award，以表彰我们的专利被评为信息领域的年度最佳专利，意大利副总理Luigi Di Maio委托其科技顾问为团队颁奖。
In 2019, together with Prof. Daniele Ielmini and Dr. Giacomo Pedretti, we were awarded the Intellectual Property Award by the Ministry of Economic Development of Italy, recognizing our patent as the best ICT patent of 2019. The award was presented by the the Legal Advisor for Communications and Innovation of Minister Luigi Di Maio.
2018年，与Daniele Ielmini教授、Giacomo Pedretti博士的创业项目获得米兰理工大学与德勤举办的创业大赛Switch2Product的Disruptive Innovation Prize。
In 2018, together with Prof. Daniele Ielmini and Dr. Giacomo Pedretti, our project was awarded the Disruptive Innovation Prize in the Switch2Product match, which was organized by Politecnico di Milano and Deloitte Italy.
2016年，清华大学物理系优秀博士毕业生任之恭提名奖。
In 2016, I was awarded the Chih-Kung Jen Nominee Prize by Department of Physics at Tsinghua University.

研究领域

Research/研究方向
研究方向为新型存储器及存内计算，取得的学术成果主要包括：
I have been working on resistive memory device and in-memory computing. Below is a summary of my representative works:
提出一类存内计算电路，实现一步解线性方程组Ax = b，解特征向量Ax = lx，进而可以用于一步解微分方程，如傅里叶方程、薛定谔方程，也可用于加速谷歌的PageRank网页排序算法。参考论文：Z. Sun, et al., PNAS (2019)；Z. Sun, et al., IEEE Trans. Electron Devices (2020)
证明了存内解线性方程组、特征向量的时间复杂度为O(1)，优于传统数字计算的多项式复杂度[O(polyN)]及量子计算的O(logN)。参考论文：Z. Sun, et al., IEEE Trans. Electron Devices (2020)；Z. Sun, et al., Adv. Intell. Syst. (2020)
提出一类存内计算电路，实现一步训练传统机器学习算法，如线性回归、逻辑回归，进而扩展至一步训练多项式回归、神经网络等算法。参考论文：Z. Sun, et al., Sci. Adv. (2020)
提出“状态神经网络（stateful neural network）”的概念，构建了最简的神经网络硬件，实现最快速、高效的状态逻辑运算。参考论文：Z. Sun, et al., Adv. Mater. (2018)
在实验上验证了氧化物阻变存储器（忆阻器）的双缺陷机制，该实验结果与同时期的国际上其它重要实验室的研究一致，共同揭示了阳离子缺陷在忆阻效应中的关键角色。参考论文：Z. Sun, et al., ACS Appl. Mater. Interfaces (2016)；A. Wedig, et al., Nat. Nanotechnol. (2016)；H. Jiang, et al., Sci. Rep. (2016)"研究领域：存内计算，机器学习，阻变存储器（忆阻器）"

近期论文

科研成果
2020
Sun, Z., Pedretti, G., Ambrosi, E., Bricalli, A. & Ielmini, D. In-Memory Eigenvector Computation in Time O(1). Advanced Intelligent Systems (2020). 访问链接
Sun, Z., Ambrosi, E., Pedretti, G., Bricalli, A. & Ielmini, D. In-Memory PageRank Accelerator With a Cross-Point Array of Resistive Memories. IEEE Transactions on Electron Devices 67, 1466-1470 (2020). 访问链接
Sun, Z., Pedretti, G., Ambrosi, E., Bricalli, A. & Ielmini, D. In-Memory PageRank Using a Crosspoint Array of Resistive Switching Memory (RRAM) Devices. 2020 2nd IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS) (2020). 访问链接
Sun, Z., Pedretti, G., Bricalli, A. & Ielmini, D. One-step regression and classification with cross-point resistive memory arrays. Science Advances 6, eaay2378 (2020). 访问链接
Sun, Z., et al. Time Complexity of In-Memory Solution of Linear Systems. IEEE Transactions on Electron Devices 67, 2945-2951 (2020). 访问链接
2019
Sun, Z., Pedretti, G. & Ielmini, D. Fast Solution of Linear Systems with Analog Resistive Switching Memory (RRAM). 2019 IEEE International Conference on Rebooting Computing (ICRC) (2019). 访问链接
Sun, Z., et al. In-memory solution of linear systems with crosspoint arrays without iterations. 2019 Device Research Conference (DRC) (2019). 访问链接
Sun, Z., et al. Solving matrix equations in one step with cross-point resistive arrays. Proceedings of the National Academy of Sciences 116, 4123-4128 (2019). 访问链接
Wang, W., et al. Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices. Nature Communications 10, 81 (2019). 访问链接
2018
Sun, Z., Ambrosi, E., Bricalli, A. & Ielmini, D. Logic Computing with Stateful Neural Networks of Resistive Switches. Advanced Materials 30, 1802554 (2018). 访问链接
2017
Sun, Z., et al. Built-In-Homojunction-Dominated Intrinsically Rectifying-Resistive Switching in NiO Nanodots for Selection-Device-Free Memory Application. Advanced Electronic Materials 3, 1600361 (2017). 访问链接
Zhao, D., et al. Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States. ACS Applied Materials & Interfaces 9, 10835-10846 (2017). 访问链接
2016
Sun, Z., et al. Deterministic Role of Concentration Surplus of Cation Vacancy Over Anion Vacancy in Bipolar Memristive NiO. ACS Applied Materials & Interfaces 8, 11583-11591 (2016). 访问链接
2015
Miao, P., et al. Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films. Scientific Reports 6, 19965 (2015). 访问链接
2013
Jiang, X., et al. Characteristics of different types of filaments in resistive switching memories investigated by complex impedance spectroscopy. Applied Physics Letters 102, 253507 (2013). 访问链接