个人简历

2005年3月在中国科学院半导体研究所获得材料物理与化学博士学位。2005年4月进入北京大学信息科学技术学院微电子学研究院从事博士后研究，出站后留校工作，2009年8月晋升副教授，2015年8月晋升教授。曾于2012年10月至2013年10月赴美国密歇根大学电子工程系进行访问研究。

研究领域

主要研究领域为新型阻变存储材料与器件、类脑神经形态材料与器件。

近期论文

[1] Wenjia Ma, Zheng Zhou, Dongbin Zhu, Lifeng Liu*, Quaternary nonvolatile adder implemented with HfOx/TiOx/HfOx/TiOx multilayer based resistive random access memory, Electronics Letters,2016,52(12):1073-1074. [2] Bin Gao, Yingjie Bi, Hongyu Chen, Rui Liu, Peng Huang, Bing Chen, Lifeng Liu*, Xiaoyan Liu, Shimeng Yu, H.S.Philip. Wong, and Jinfeng Kang, Ultra-low-Energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems, ACS Nano, 2014,8(7):6998-7004. [3] Bin Gao, Bing Chen, Feifei Zhang, Lifeng Liu*, Xiaoyan Liu, Jinfeng Kang, Hongyu Yu, and Bin Yu, A novel defect-engineering-based implementation for high-performance multilevel data storage in resistive switching memory, IEEE Transactions on Electron Devices, 2013,60(4)137 9-1383. [4] Yang Lu, Bin Gao, Yihan Fu, Bing Chen, Lifeng Liu*, Xiaoyan Liu, and Jinfeng Kang, A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices, IEEE Electron Device Letters, 2012,33(3):306-308. [5] Haowei Zhang, Lifeng Liu*, Bin Gao,Yuanjun Qiu, Xiaoyan Liu, Jing Lu, Ruqi Han, Jinfeng Kang, and Bin Yu, Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach, Applied Physics Letters,2011,98, 042105.