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韩德栋
2023-05-05 16:07
  • 韩德栋
  • 韩德栋 - 副教授-北京大学-信息科学技术研究所-个人资料

近期热点

资料介绍

个人简历


北京大学微电子与固体电子学专业博士,信息科学技术学院微电子系副教授,信息科学技术学院工会副主席,新器件研究室副主任。2008-2009年在日本庆应大学做访问学者一年。

研究领域


主要研究领域包括新型半导体材料;新型MOS器件结构;新型薄膜晶体管的工艺技术、新型透明显示和柔性显示关键技术研究等。

近期论文


1. Han, DD; Zhang, Y; Cong, YY; Yu, W; Zhang, X; Wang, Y; Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate, SCIENTIFIC REPORTS, Year:2016 Volume:6 Page: srep38984 2. Han, DD; Chen, ZF; Cong, YY; Yu, W; Zhang, X; Wang, Y; High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates, EEE TRANSACTIONS ON ELECTRON DEVICES, Year: 2016 Volume:63 Issue:8 Page:3360-3363 3. Han, DD; Huang, LL; Yu, W; Cong, YY; Dong, JC; Zhang, X; Wang, Y; Effects of Channel Layer Thickness on Characteristics of Flexible Nickel-Doped Zinc Oxide Thin-Film Transistors, IEEE TRANSACTIONS ON ELECTRON DEVICES Year:2017 Volume:64 Issue:5 Page:1997-2000 4. Cong, YY; Han, DD*; Dong, JC; Zhang, SD; Zhang, X; Wang, Y; Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate, SCIENTIFIC REPORTS Year:2017 Volume:7 Page: 41598 5. Yu, W; Han, DD*; Dong, JC; Cong, YY; Cui, GD; Wang, Y; Zhang, SD; AZO Thin Film Transistor Performance Enhancement by Capping an Aluminum Layer, IEEE TRANSACTIONS ON ELECTRON DEVICES, Year:2017 Volume:64 Issue:5 Page:2228-2232 6. Cui, GD; Han, DD*; Cong, YY; Dong, JC; Yu, W; Zhang, SD; Zhang, X; Wang, Y; High-Performance Ti-Doped Zinc Oxide TFTs With Double-Layer Gate Dielectric Fabricated at Low Temperature, IEEE ELECTRON DEVICE LETTERS Year:2017 Volume:38 Issue:2 Page:207-209 7. Li, HJ; Han, DD*; Liu, LQ; Dong, JC; Cui, GD; Zhang, SD; Zhang, X; Wang, Y; Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique, NANOSCALE RESEARCH LETTERS Year:2017 Volume:12 Page:11671 8. Cai, J; Han, DD*; Geng, YF; Wang, W; Wang, LL; Zhang, SD; Wang, Y; High-Performance Transparent AZO TFTs Fabricated on Glass Substrate, IEEE TRANSACTIONS ON ELECTRON DEVICES Year:2013 Volume:60 Issue:7 Page:2432-2435 9. Han, DD; Huang, FQ; Cong, YY; Huang, LL; Zhang, Y; Shi, P; Yu, W; Zhou, XL; Liu, LF; Zhang, SD; Zhang, X; Wang, Y; Fully transparent flexible dual-layer channel Ga-doped ZnO thin-film transistors on plastic substrates, IEEE ELECTRONICS LETTERS Year:2015 Volume:51 Issue:14 Page:1069-1070 10. Cong, YY; Han, DD*; Zhou, XL; Huang, LL; Shi, P; Yu, W; Zhang, Y; Zhang, SD; Zhang, X; Wang, Y; High-Performance Al-Sn-Zn-O Thin-Film Transistor With a Quasi-Double-Channel Structure, IEEE ELECTRON DEVICE LETTERS Year:2016 Volume:37 Issue:1 Page:53-56 11. Han, DD; Wang, W; Cai, J; Wang, LL; Ren, YC; Wang, Y; Zhang, SD; Flexible Thin-Film Transistors on Plastic Substrate at Room Temperature, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY Year:2013 Volume:13 Issue:7 Page:5154-5157 12. Han, DD; Zhang, SM; Zhao, FL; Dong, JC; Cong, YY; Zhang, SD; Zhang, X ;Wang, Y; Transparent gallium doped zinc oxide thin-film transistors fabricated on glass substrate, THIN SOLID FILMS Year:2015 Volume:594 Page:266-269 13. Han, DD; Cai, J; Wang, W; Wang, LL; Wang, Y; Liu, LF; Zhang, SD; High Performance Aluminum-Doped ZnO Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature, SENSOR LETTERS Year:2013 Volume:11 Issue:8 Page:1509-1512 14. Chen, ZF; Han, DD*; Zhao, NN; Cong, YY; Wu, J; Dong, JC; Zhao, FL; Liu, LF; Zhang, SD; Zhang, X; Wang, Y; High-performance dual-layer channel ITO/TZO TFTs fabricated on glass substrate, ELECTRONICS LETTERS Year:2014 Volume:50 Issue:8 Page:633-634

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