个人简历
2006年1月北京大学微电子学与固体电子学博士毕业，获理学博士学位。毕业后留校工作，2010年8月起任职副教授。
研究领域
主要从事新型微纳器件及其相关集成技术研究；新型微纳器件辐射效应、损伤机理及加固技术研究方面的工作。
近期论文
1、Ru Huang, Xia An, Junhua Liu, Xing Zhang, “New device technologies for green micro/nano electronics”(Chapter 5), in “Green micro/nano electronics” (Chief Editor: Yangyuan Wang), Science Press, Beijing, 2013 2、Weikang Wu, Xia An*, Taotao Que, Xing Zhang, Dongjun Shen, Gang Guo and Ru Huang*, “Investigation of a radiation-hardened quasi-SOI device: performance degradation induced by single ion irradiation”, Semiconductor Science and Technology, vol. 31, no.10, 105009 (6pp) (2016) 3、LIN Meng, AN Xia*, LI Ming*, YUN QuanXin, LI Min, LI ZhiQiang, LIU PengQiang, ZHANG Xing and HUANG Ru*, “Ge surface passivation by GeO2 fabricated by N2O plasma oxidation”, Science China-Information Sciences ( Sci. China Inf. Sci.), vol.58, no.4，042403（5pp）(2015) 4、Weikang Wu, Xia An*, Fei Tan, Yehua Chen, Jingjing Liu, Yao Zhang, Xing Zhang, Dongjun Shen, Gang Guo and Ru Huang*,“Impact of heavy ion irradiation on CMOS current mirrors based on SOI and bulk Si substrates: mismatch and output impedance”, Semiconductor Science and Technology, vol. 30, 115002 (7pp) (2015) 5、安霞, 黄如, 李志强, 云全新, 林猛, 郭岳, 刘朋强, 黎明, 张兴，“高迁移率Ge沟道器件研究进展”,物理学报，卷：60，期：20，208501（12pp）（2015） 6、Fei Tan*, Ru Huang*, Xia An*, Weikang Wu, Hui Feng, Liangxi Huang, Jiewen Fan, Xing Zhang and Yangyuan Wang, “Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs”, Semiconductor Science and Technology, vol.29, 015010(7pp)（2014） 7、Zhiqiang Li, Xia An*, Min Li, Quanxin Yun, Meng Lin, Ming Li*, Xing Zhang, and Ru Huang*, “Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation”, IEEE Electron Device Letters, vol. 34, no.5, pp.596-598 （May 2013） 8、Zhiqiang Li, Xia An*, Quanxin Yun, Meng Lin, Min Li, Ming Li*, Xing Zhang, and Ru Huang*, “Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Multiple Implantation and Multiple Annealing Technique”, IEEE Electron Device Letters, vol. 34, no. 9, pp. 1097–1099（Sep. 2013） 9、Fei Tan, Xia An*, Shoubin Xue, Liangxi Huang, Weikang Wu, Xing Zhang, Ru Huang, “Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs”, Semiconductor Science and Technology, vol. 28, no.5, 055003(5pp) (May 2013) 10、Meng Lin, Ming Li*, Xia An*, Quanxin Yun, Min Li, Zhiqiang Li, Pengqiang Liu, Xing Zhang and Ru Huang*, “Surface passivation of the Ge substrate by novel nitrogen plasma immersion treatment”, Semiconductor Science and Technology, vol.28, no.8, 085010 (4pp) (2013) 11、Fei Tan, Ru Huang*, Xia An*, Yimao Cai, Yue Pan, Weikang Wu, Hui Feng, Xing Zhang, and Yangyuan Wang, “Investigation on the Response of TaOx–based Resistive Random-Access Memories to Heavy-Ion Irradiation”, IEEE Transactions on Nuclear Science, vol. 60, no. 6, pp.4520-4525 (Dec. 2013) 12、Yue Guo, Xia An*, Runsheng Wang, Xing Zhang and Ru Huang, “Investigation on Morphology and Thermal Stability of NiGe Utilizing Ammonium Fluoride Pretreatment for Germanium-Based Technology”, IEEE Electron Device Letters, vol. 32, no. 4, pp.554-556 ( April 2011) 13、Yue Guo, Xia An*, Ru Huang*, Chunhui Fan and Xing Zhang, “Tuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after Germanidation technique”, Applied Physics Letters, vol. 96, no. 14, 143502 (3pp) (April 2010) 14、Sihao Wang, Yunpeng Pei, Ru Huang*，Wenhua Wang, Wen Liu, Shoubin Xue, Xia An*, Jingquan Tian and Yangyuan Wang, “A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation”, Journal of Applied Physics, vol. 107, 024515 (4pp) (2010) 15、Xia An, Qing Lu, Ru Huang, Wenhua Wang, Shoubin Xue, Baoping He and Xing Zhang, “Total ionizing dose effects of novel vertical channel double-gate nMOSFETs”, Semicond. Sci. Technol., vol.24, no.8, 085012 (4pp) (2009) 16、Jing Zhuge, Xia An*, Ru Huang*, Han Xiao, Xiaoyu Hou, RunshengWang and YangyuanWang, “A comparative study on analog/RF performance of UTB GOI and SOI devices”, Semicond. Sci. Technol., vol.23, 075009 (7pp) (2008)
