个人简历

杨洪新研究员本科毕业于吉林大学，硕士在吉林大学和中科院物理所联合培养，2012年于法国格勒诺布尔大学获得博士学位，后陆续在巴黎十一大，澳大利亚联邦科学与工业研究中心，法国SPINTEC，法国国家科学中心和泰雷兹联合物理实验室，以及日本国立材料研究所从事科学研究工作，17年加入宁波材料所，与何少龙研究员、曹彦伟研究员共同创建量子功能材料团队，团队现有3名研究员、8名博后等共30余人。
已在Nature Materials，Nature Nanotech.，PRL，Nano Lett.，Advanced Materials等杂志上发表论文60余篇，在垂直磁各向异性、拓扑磁结构机理研究、自旋霍尔效应以及石墨烯自旋电子学等领域都有文章入选ESI高引论文。

研究领域

主要集中在表面界面自旋电子学的理论计算研究，""

近期论文

13.Coherent Resonant Tunneling through Double Metallic Quantum Well States
Bingshan Tao, Caihua Wan, Ping Tang, Jiafeng Feng, Hongxiang Wei, Xiao Wang, Stephane Andrieu, Hongxin Yang, Mairbek Chshiev, Xavier Devaux, Thomas Hauet, Francois Montaigne, Stephane Mangin, Michel Hehn, Daniel Lacour, Xiufeng Han, Yuan Lu
Nano Letters 19, 3019 (2019)
12. Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer
Qidong Xie, Weinan Lin, Baishun Yang, Xinyu Shu, Shaohai Chen, Liang Liu, Xiaojiang Yu, Mark BH Breese, Tiejun Zhou, Ming Yang, Zheng Zhang, Shijie Wang, Hongxin Yang, Jianwei Chai, Xiufeng Han, Jingsheng Chen
Advanced Materials 31 (21), 1900776 (2019)
11. Significant Dzyaloshinskii-Moriya Interaction at Graphene-Ferromagnet Interfaces
Hongxin Yang, Gong Chen, Alexandre A.C. Cotta, Alpha T. N'Diaye, Kai Liu, Andreas Schmid, Albert Fert, Mairbek Chshiev
Nature Materials 17, 605 (2018)
10. Anatomy and giant enhancement of the perpendicular magnetic anisotropy of cobalt-graphene heterostructures
Hongxin Yang, D. Vu Anh, A. Hallal, N. Rougemaille, J. Coraux, G. Chen, A. K. Schmid, and M. Chshiev
Nano Letters 16, 145 (2016)
9. Room-temperature chiral magnetic skyrmions in ultrathin magnetic nanostructures
O. Boulle, J. Vogel, Hongxin Yang, S. Pizzini, D. de Souza Chaves, A. Locatelli, T. O. Mentes, A. Sala, L. D. Buda-Prejbeanu, O. Klein, M. Belmeguenai, Y. Roussigné, A. Stashkevich, S. M. Chérif, L. Aballe, M. Foerster, M. Chshiev, S. Auffret, I. M. Miron, G. Gaudin
Nature Nanotechnology 11, 449 (2016)
8. Ferroelectric control of organic/ferromagnetic spinterface
S. H. Liang,Hongxin Yang, H. W. Yang, B. S. Tao, A. Djeffal, M. Chshiev, W. C. Huang, X. G. Li, A. Ferri, R. Desfeux, S. Mangin, D. Lacour, M. Hehn, O. Copie, K. Dumesnil, Y. Lu
Advanced Materials 28, 10204 (2016)
7. Anatomy of Dzyaloshinskii-Moriya Interaction at Co/Pt Interfaces
Hongxin Yang, A. Thiaville, S. Rohart, A. Fert, and M. Chshiev
Phys. Rev. Lett. 115, 267210 (2015)
6. Long Range Phase Coherence in Double Barrier Magnetic Tunnel Junctions with 12nm Thick Metallic Quantum Well
B. S. Tao, Hongxin Yang, Y. L. Zuo, X. Devaux, G. Lengaigne, M. Hehn, D. Lacour, S. Andrieu, M. Chshiev, T. Hauet, S. Mangin, F. Montaigne, X. F. Han, Y. Lu
Phys. Rev. Lett. 115, 157204 (2015)
5. Proximity Effects Induced in Graphene by Magnetic Insulators: First-Principles Calculations on Spin Filtering and Exchange-Splitting Gaps
Hongxin Yang, A. Hallal, D. Terrade, X. Waintal, S. Roche and M. Chshiev
Phys. Rev. Lett. 110, 046603 (2013)
4. Giant Spin Hall Effect Induced by Skew Scattering from Bismuth Impurities inside Thin Film CuBi Alloys
Y. Niimi, Y. Kawanishi, D. H. Wei, C. Derahlot, Hongxin Yang, M. Chshiev, T. Valet, A. Fert, and Y. Otani
Phys. Rev. Lett. 109, 156602 (2012)
3. First-principles investigation of the very large perpendicular magnetic anisotropy at Fe|MgO and Co|MgO interfaces
Hongxin Yang, M. Chshiev, B. Dieny, J. H. Lee, A. Manchon, K. H. Shin
Phys. Rev. B 84, 054401 (2011) [4 years as ESI highly cited paper]
2. Inducing and optimizing of magnetism in graphene nanomeshes
Hongxin Yang, M. Chshiev, D. W. Boukhvalov, X. Waintal, and S. Roche
Phys. Rev. B 84, 214404 (2011)
1. Bond Counting Rule for Carbon and Its Application to the Roughness of Diamond (001)
Hongxin Yang, L. F. Xu, Z. Fang, C. Z. Gu, and S. B. Zhang
Phys. Rev. Lett. 100, 026101 (2008)
Nature等杂志审稿人。