个人简历

博士，研究员，硕士生导师，2010年6月毕业于浙江大学材料系硅材料国家重点实验室，获工学博士学位；2010年进入宁波材料所。至2013年为止共发表SCI论文30余篇（1作12篇，2作3篇），获得浙江省科技进步一等奖1项，国家发明专利1项；作为负责人主持过国家自然科学青年基金、中国博士后基金等多个项目，作为科技骨干参加过中科院太阳能行动、国家自然科学面上基金等项目。
招生方向
新能源材料及相关技术。
专利
11. 一种用于硅晶体材料缺陷显示的腐蚀液及其使用方法，申请号200710070017.4 ，授权号CN 101082550B。
研究项目
1. 国家自然科学青年基金（No. 61106096）。
2. 中国博士后科学基金第五批特别资助（No. 2012T50535）。
3. 中国博士后科学基金第49批面上资助（No. 20110491831）。
4. 宁波市自然科学基金（No. Y10820UA32）。
荣誉奖励
浙江省科学技术奖一等奖，重掺磷直拉硅单晶的制备技术及应用（No.11140101）， 排名7；

研究领域

纳米硅材料、晶体硅材料、硅太阳电池研究；""

近期论文

1. Yuheng Zeng, Xiaobo Chen, Qiang Cheng, Junhua Zhao, Weijie Song, and Ning Dai, Thermodynamics of the formation of face-centered-cubic silicon nanocrystals in silicon-rich SiC thin films annealed using rapid thermal annealing, Appl. Surf. Sci., Vol. 265, p. 286–290, (2013).
2. Yuheng Zeng, Xiangyang Ma, Jiahe Chen, Weijie Song, Weiyan Wang, Longfei Gong, Daxi Tian, and Deren Yang, Grown-in precipitates in heavily phosphorus-doped Czochralski silicon, J. Appl. Phys. 111(3): p. 033520-4. (2012).
3. Yuheng Zeng, Ning Dai, Qiang Cheng, Junjun Huang, Xingbo Liang, and Weijie Song., Preparation and characterization of phosphorus-doped silicon nanocrystals in SiCx films, Mat. Sci. Semicon. Proc., Vol. 16, p. 598–604, (2012)
4. Junjun Huang, Yuheng Zeng, Ruiqin Tan, Weiyan Wang, Ye Yang, Ning Dai, Weijie Song, Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films, Appl. Surf. Sci., Vol. 270, p. 428–431 (2013)
5. Junjun Huang, Yuheng Zeng, Weiyan Wang, Ye Yang, Jinhua Huang, Ruiqin Tan, Shixun Dai, Ning Dai, and Weijie Song, Reduction of residual stress in SiO2-matrix silicon nano-crystal thin films by a combination of rapid thermal annealing and tube-furnace annealing, Physica Status Solidi A, Vol. 210, p. 528-532 (2012).
6. Yuheng Zeng, Xiangyang Ma, Weiyan Wang, Daxi Tian, Longfei Gong, and Deren Yang, Oxygen precipitation heterogeneously nucleating on silicon phosphide precipitates in heavily phosphorus doped Czochralski silicon. Appl. Surf. Sci., 105: p. 093503, (2009).
7. Yuheng Zeng, Jiahe Chen, Xiangyang Ma, Weiyan Wang, and Deren Yang, Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing. J. Cryst. Growth, 311(12): p. 3273-77, (2009).
8. Yuheng Zeng, Xiangyang Ma, Jiahe Chen, Daxi Tian, Longfei Gong, and Deren Yang, Oxygen precipitation in heavily phosphorus-doped Czochralski silicon: effect of nitrogen co-doping, Semicond. Sci. Technol., 24: p. 105030, (2009).
9. Yuheng Zeng, Deren Yang, Xiangyang Ma, Jiahe Chen, and Duanlin Que, Oxygen precipitation in heavily phosphorus-doped silicon wafer annealed at high temperatures. Mat. Sci. Eng. B-Solid, 159-160: p. 145-48, (2009).
10. Yuheng Zeng, Deren Yang, Xiangyang Ma, Zhidan Zeng, Duanlin Que, Longfei Gong, Daxi Tian, and Li, L., A chromium-free etchant for delineation of defects in heavily doped n-type silicon wafers. Mat. Sci. Semicon. Proc., 11(4): p. 131-36, (2009).