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尚大山
2023-05-16 16:48
  • 尚大山
  • 尚大山 - 博导-中国科学院大学-微电子学院-个人资料

近期热点

资料介绍

个人简历


招生专业
080903-微电子学与固体电子学
080501-材料物理与化学
081104-模式识别与智能系统
招生方向
神经形态计算器件与集成技术
神经网络模型与深度学习算法
感算融合的人工智能感知系统
教育背景
2004-03--2007-07 中国科学院上海硅酸盐研究所 博士
学历
工作经历
2018-10~现在, 中国科学院微电子研究所, 研究员,博士生导师
2014-03~2018-10, 中国科学院物理研究所, 副研究员,博士生导师
2013-11~2014-01, 英国剑桥大学材料科学与冶金系, 洪堡欧洲访问学者
2012-07~2014-03, 德国亚琛工业大学物理系(IA), 洪堡学者
2011-05~2012-04, 韩国国立首尔大学物理与天文系, 博士后
2009-07~2011-5, 中国科学院物理研究所, 副研究员
2007-08~2009-06, 中国科学院物理研究所, 博士后

工作简历
2018-10~现在, 中国科学院微电子研究所, 研究员
2014-03~2018-10,中国科学院物理研究所, 副研究员
2013-11~2014-01,英国剑桥大学材料科学与冶金系, 访问学者
2012-07~2014-03,德国亚琛工业大学物理系(IA), 洪堡学者
2011-05~2012-04,韩国国立首尔大学物理与天文系, 博士后
2009-07~2018-10,中国科学院物理研究所, 副研究员
2007-08~2009-06,中国科学院物理研究所, 博士后
教授课程
文献阅读

奖励信息
(1) 2018中国物理学会“最有影响力论文”一等奖, 一等奖, 其他, 2018
(2) 2017美国第三届功能材料进展国际会议Best Poster Award, 二等奖, 其他, 2017
(3) 2016美国第67届磁学与磁性材料国际会议Best Poster Award, 一等奖, 其他, 2016
专利成果
( 1 ) 氧化物基电子突触器件及阵列, 发明, 2020, 第 1 作者, 专利号: 202010096147.0
( 2 ) 人工突触单元及其制备方法, 发明, 2021, 第 1 作者, 专利号: 2021022600948580
( 3 ) Electromagnetic conversion device and information memory comprising the same, 发明, 2018, 第 3 作者, 专利号: PCT/CN2016/071447

科研项目
( 1 ) 基于磁电耦合材料的新型信息存储器件研究, 主持, 国家级, 2017-01--2020-12
( 2 ) 基于层状氧化物材料的神经突触晶体管, 主持, 国家级, 2019-01--2022-12
( 3 ) 存算一体器件及其计算新架构, 主持, 国家级, 2019-09--2024-08
( 4 ) 基于混合器件的神经形态计算架构及芯片研究, 参与, 国家级, 2020-11--2025-10
( 5 ) 存算一体基础器件与系统前沿科学, 参与, 部委级, 2020-01--2024-12
( 6 ) 金属/绝缘体随机混合体系阻变效应研究, 主持, 国家级, 2013-01--2016-12
( 7 ) 巨电致电阻效应中导电路径的形成与演变过程研究, 主持, 国家级, 2011-01--2013-12
( 8 ) 新型电致电阻材料的物理机制, 参与, 国家级, 2013-01--2017-12
参与会议
(1)Fully memristive SNNs with temporal coding for fast and low-power edge computing 2020国际电子器件大会 2020-12-14
(2)Experimental demonstration of conversion-based SNNs with 1T1R Mott neurons for neuromorphic inference 2019国际电子器件大会 2019-12-09
(3)Electrolyte-Gated Synaptic Transistor for Neuromorphic Computing 2019忆阻材料、器件与系统国际研讨会 尚大山 2019-07-09
(4)Synaptic Transistors Based on Layered Molybdenum Oxide 第2次中德电子和存储材料研讨会 尚大山 2018-09-05
(5)Nonvolatile memory and neuromorphic functions based on magnetoelectric effect 欧洲先进材料会议 尚大山 2018-08-24
(6)Electrochemcial synaptic transistors based on two-dimensional molybdenum oxide 2018材料研究会春季会议 尚大山 2018-04-02
项目协作单位
复旦大学
香港大学
中国科学技术大学
清华大学
中国科学院物理研究所

研究领域


"""""随着人类社会信息量的高速增长,计算机在运算速度提高的同时,对能源的消耗也在迅速增加。人脑是自然界中非常高效、节能的信息处理系统,且只有约二十瓦左右的功率。这种能源消耗上的巨大差异,主要来自于计算机与人脑的构架及信息处理方式的不同。现有的计算机是通过冯·诺依曼构架方式进行信息存储与处理的,即信息存储与信息处理在物理上是分离的,在处理器和存储器之间需要进行大量的信息传递;而人脑则是由神经元网络所构成,信息通过改变神经元之间的连接强度(称为突触权重)来进行存储与处理,并且具有自学习功能,实现了存储与处理的一体化。围绕类脑计算领域的重要科学与技术问题,开展具有认知记忆的神经形态计算器件、集成、算法和系统研究,拓展其在大数据处理、物联网和人工智能系统中的应用,具体包括:
神经形态计算器件与集成技术
神经网络模型与深度学习算法
感算融合的人工智能感知系统"

近期论文


(1) One transistor one electrolyte-gated transistor based spiking neural network for power-efficient neuromorphic computing system, Advanced Functional Materials, 2021, 通讯作者
(2) Efficient and Robust Nonvolatile Computing-In-Memory based on Voltage Division in 2T2R RRAM with Input-Dependent Sensing Control, IEEE Transactions on Circuits and Systems II: Express Briefs, 2021, 第 7 作者
(3) A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing, Advanced Functional Materials, 2021, 其他(合作组作者)
(4) A highly CMOS compatible hafnia-based ferroelectric diode, Nature Communications, 2020, 其他(合作组作者)
(5) Nonvolatile memory and artificial synapse based on the Cu/P(VDF-TrFE)/Ni organic memtranstor, ACS Applied Materials & Interfaces, 2020, 第 3 作者
(6) Artificial synapse based on van der Waals heterostructures with tunable synaptic funcions for neuromorphic computing, ACS Applied Materials & Interfaces, 2020, 第 1 作者
(7) Oxide-based electrolyte-gated transistors for spatiotemporal information processing, Advanced Materials, 2020, 通讯作者
(8) Ion-gated transistor: An enabler for sensing and computing integration, Advanced Intelligent Systems, 2020, 通讯作者
(9) An organic synaptic transistor with Nafion electrolyte, Journal of Physics D: Applied Physics, 2020, 通讯作者
(10) Fully Memristive SNNs with Temporal Coding for Fast and Low-power Edge Computing, IEEE International Electron Devices Meeting (IEDM), 2020, 其他(合作组作者)
(11) Artificial synaptic device based on a multiferroic heterostructure, Journal of Physics D: Applied Physics, 2019, 第 3 作者
(12) Uniform, fast, and reliable LixSiOy-based resistive switching memroy, IEEE Electron Device Letters, 2019, 第 3 作者
(13) Improvement of endurance in HZO-based ferroelectric capacitor using Ru electrode, IEEE Electron Device Letters, 2019, 第 3 作者
(14) Realization of complete Boolean logic functions using a single memtranstor, Physical Review Applied, 2019, 第 3 作者
(15) A CMOS-compatible ionic/electronic hybrid transistor based on 2D α-MoO 3, International Vacuum Electronics Conference (IVEC), 2019, 第 3 作者
(16) Magnetocaloric effect in the layered organic-inorganic hybrid (CH3NH3)2CuCl4, Chin. Phys. B, 2018, 第 5 作者
(17) Room-temperature magnetoelectric effects in multiferroic Y-type hexaferrites, Journal Physics D: Applied Physics, 2018, 第 4 作者
(18) Electric control of exchange bias in multiferroic hexaferrite Ba0.4Sr1.6Mg2Fe22O22, Physics Review B, 2018, 第 4 作者
(19) Spin-induced multiferroicity in the binary perovskite manganite Mn2O3, Nature Communication, 2018, 第 4 作者
(20) All-solid-state synaptic transistor with ultralow conductance for neuromorphic computing, Advanced Functional Materials, 2018, 通讯作者
(21) Mimic synaptic plasticity and neural network using memtranstors, Advanced Materials, 2018, 通讯作者
(22) Room-temperature nonvolatile memory based on a single-phase multiferroic hexaferrite, Advanced Functional Materials, 2018, 第 2 作者
(23) 基于磁电耦合效应的基本电路元件和非易失性存储器, 物理学报, 2018, 通讯作者
(24) Giant magnetoelectric effects achieved by tuning spin cone symmetry in Y-type hexaferrites, Nature Communication, 2017, 第 8 作者
(25) Impact of pressure on the resonant bonding in chalcogenides, The Journal of Physical Chemistry C, 2017, 第 7 作者
(26) Large pyroelectric and thermal expansion coefficients in the [(CH3)2NH2]Mn (HCOO)3 metal-organic framework, Applied Physics Letters, 2017, 第 5 作者
(27) Hidden spin-order-induced room-temperature ferroelectricity in a peculiar conical magnetic structure, Physical Review B, 2017, 第 8 作者
(28) Direct measurement of thermoelectric properties of β-MnO2 in its powder form, Applied Physics Letters, 2017, 第 5 作者
(29) A synaptic transistor based on quasi-two- dimensional molybdenum oxide, Advanced Materials, 2017, 通讯作者
(30) Electrochemical-reaction-induced synaptic plasticity in MoOx-based solid state electrochemical cells, Physical Chemistry Chemical Physics, 2017, 通讯作者
(31) Realization of a flux-driven memtranstor at room temperature, Chinese Physics B, 2016, 第 2 作者
(32) A multilevel nonvolatile magnetoelectric memory, Scientific Report, 2016, 第 3 作者
(33) Nonvolatile memory based on nonlinear magnetoelectric effects, Physical Review Applied, 2016, 第 4 作者
(34) Quantum electric-dipole liquid on a triangular lattice, Nature Communication, 2016, 第 7 作者
(35) Spin-driven multiferroics in BaYFeO4, Journal of Applied Physics, 2016, 第 5 作者
(36) Nonvolatile Multi-level Memory and Boolean Logic Gates Based on a Single Ni/[Pb(Mg1/3Nb2/3)O3]0.7[PbTiO3]0.3/Ni Heterostructure, Physical Review Applied, 2016, 通讯作者
(37) Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces, Physical Chemistry Chemical Physics, 2016, 通讯作者
(38) Nonvolatile transtance change random access memory based on magnetoelectric P(VDF-TrFE)/Metglas heterostructures, Applied Physics Letters, 2016, 通讯作者
(39) Memristive switching in Cu/Si/Pt cells and its improvement in vacuum environment, Solid State Ionics, 2016, 通讯作者
(40) Towards the Complete Relational Graph of Fundamental Circuit Elements, Chinese Physics B, 2015, 第 1 作者
(41) Understanding the conductive channel evolution in Na:WO3-x-based planar devices, Nanoscale, 2015, 通讯作者
(42) Enhancement of the thermoelectric properties of MnSb 2 Se 4 through Cu resonant doping, RSC advances, 2015, 第 9 作者
(43) Resistance switching in oxides with inhomogeneous conductivity, Chinese Physics B, 2013, 通讯作者
(44) Gradual electroforming and memristive switching in Pt/CuOx/Si/Pt systems, Nanotechnology, 2013, 通讯作者
(45) Trap state controlled bipolar resistive switching effect and electronic transport in LaAlO3/Nb:SrTiO3 heterostructures, Applied Physics Letters, 2013, 第 6 作者
(46) Visualization of the conductive channel in a planar resistance switching device based on electrochromic materials, Journal of Applied Physics, 2012, 通讯作者
(47) Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices, Applied Physics Letters, 2012, 第 4 作者
(48) Pulse-induced alternation from bipolar resistive switching to unipolar resistive switching in the Ag/AgOx/MgZnO/Pt device, Journal of Physics D: Applied Physics, 2012, 第 4 作者
(49) Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films, Nanotechnology, 2011, 通讯作者
(50) Roles of silver oxide in the bipolar resistance switching devices with silver electrode, Applied Physics Letters, 2011, 通讯作者
(51) Improved resistance switching in ZnO-based devices decorated with Ag nanoparticles, Journal of Physics D: Applied Physics, 2011, 第 2 作者
(52) Direct observation of local resistance switching in WO3 films, Journal of Physics D: Applied Physics, 2011, 第 3 作者
(53) Buffer-layer-enhanced magnetic field effect in La0.5Ca0.5MnO3/LaMnO3/SrTiO3:Nb heterojunctions, Journal of Applied Physics, 2011, 第 4 作者
(54) Influence of film thickness on the physical properties of manganite heterojunctions, Journal of Applied Physics, 2011, 第 4 作者
(55) Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure, Phys. Status Solidi (RRL), 2010, 通讯作者
(56) Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing, Applied Physics Letters, 2010, 第 1 作者
(57) Interfacial barrier in manganite junctions with different crystallographic orientations, Applied Physics Letters, 2010, 第 4 作者
(58) Effect of temperature on the La1-xCaxMnO3/SrTiO3:Nb (x=0–0.75) heterojunctions, Applied Physics Letters, 2010, 第 5 作者
(59) Endurance improvement of resistance switching behaviors in the La0.7Ca0.3MnO3 film based devices with Ag-Al alloy top electrodes, Journal of Applied Physics, 2010, 第 5 作者
(60) Electronic transport and colossal electroresistance in SrTiO3:Nb-based Schottky junctions, Applied Physics Letters, 2009, 第 1 作者
(61) Crystallinity dependence of resistance switching in La0.7Ca0.3MnO3 films grown by pulsed laser deposition, Journal of Applied Physics, 2009, 第 1 作者
(62) Bipolar Resistance Switching in Fully Transparent ZnO:Mg-Based Devices, Applied Physics Express, 2009, 通讯作者
(63) Electric pulse-induced resistance switching in (Bi2O3)0.7(Y2O3)0.3 films, Journal of Applied Physics, 2009, 第 2 作者
(64) The polarity origin of the bipolar resistance switching behaviors in metal/La0.7Ca0.3MnO3/Pt junctions, Applied Physics Letters, 2009, 第 5 作者
(65) Resistive switching properties in oxygen-deficient Pr0.7Ca0.3MnO3 junctions with active Al top electrodes, Journal of Applied Physics, 2009, 第 2 作者
(66) Buffer layer-enhanced magnetic field effect in manganite-based heterojunctions, Applied Physics Letters, 2009, 第 4 作者
(67) Resistance dependence of photovoltaic effect in Au/SrTiO3:Nb(0.5 wt %) Schottky junctions, Applied Physics Letters, 2008, 第 1 作者
(68) Photoresponse of the Schottky junction Au/SrTiO3:Nb in different resistive states, Applied Physics Letters, 2008, 第 1 作者
(69) Reversible multilevel resistance switching of Ag-La0.7Ca0.3MnO3-Pt heterostructures, Journal of Material Research, 2008, 第 1 作者
(70) Asymmetric fatigue and its endurance improvement in resistance switching of Ag-La0.7Ca0.3MnO3-Pt heterostructures, Journal of Physics D: Applied Physics, 2007, 第 1 作者
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