刘舒曼
近期热点
资料介绍
个人简历
刘舒曼,女,博士,研究员,博士生导师。2000年于中科院半导体所获博士学位,毕业后,在北京交通大学任博士后、副教授,后分别在日本姬路工业大学和东京大学从事博士后研究工作,2007年11月至今在中科院半导体所工作。取得的主要科研成果:在纳米材料的化学制备方面,实现了稀土离子在纳米半导体中的掺杂和能量传递,作为掺杂纳米晶的代表性成果被《small》的综述文章引用;提出了低成本、大规模制备纳米硅的新方法,该项技术发表在美国化学学会刊物《Langmuir》和《ChemMater》上;在量子线激光器方面,实现了T型量子线的低阈值电注入激射,该阈值电流迄今仍是国际上最好的结果;在锑化物量子阱超晶格方面,国内率先研制出波长在3-4微米、室温连续波工作、功率大于100mW的锑化物激光器。承担的在研/完成项目:1)国家自然科学基金“3-4微米锑化物单管及阵列激光器”(2018-2022)2)国家自然科学基金“高工作温度长波红外量子级联探测器”(2018-2021)3)国家自然科学基金“MOCVD生长InAs/GaSbII类超晶格中界面形成动力学及其对超晶格性能的影响”(2013-2016)研究领域
长期从事低维半导体结构材料生长与器件研究,目前主要研究半导体量子阱、超晶格等低维结构的MBE外延及相关器件。近期论文
1.TianYu,ShumanLiu†,JinchuanZhang,BoXu,LijunWang,JunqiLiu,NingZhuo,ShenqiangZhai,XiaolingYe,YonghaiChen,FengqiLiu†,andZhanguoWang,InAs-basedinterbandcascadelasersat4.0μmoperatingatroomtemperature,J.Semicond.39(11)114003(2018)2.TianYu,Shu-ManLiu∗,Xiao-LingYe,NingZhuo,Feng-QiLiu,BoXu∗,andZhan-GuoWang,DefectFormationandEliminationDuringtheGrowthofGaSbEpilayer,J.Nanosci.Nanotech.18,7455–7459(2018)3.Feng-JiaoWang,Shu-ManLiu∗,Xiao-LingYe,NingZhuo,Jun-QiLiu,Li-JunWang,Jin-ChuanZhang,Shen-QiangZhai,Feng-QiLiu∗,andZhan-GuoWang,LongWavelengthInfraredQuantumCascadeDetector,J.Nanosci.Nanotech.18,7604–7607(2018)4.Feng-JiaoWang,Shu-ManLiu∗,NingZhuo,Xiao-LingYe,Jun-QiLiu,Li-JunWang,Jin-ChuanZhang,Shen-QiangZhai,Feng-QiLiu∗,andZhan-GuoWang,InfluenceofQuantumDotsonResponseofQuantumCascadeDetector,J.Nanosci.Nanotech.18,7394–7399(2018)5.FengjiaoWang(王风娇),NingZhuo(卓宁),ShumanLiu(刘舒曼)*,FeiRen(任飞),ShenqiangZhai(翟慎强),JunqiLiu(刘俊岐),JinchuanZhang(张锦川),FengqiLiu(刘峰奇),andZhanguoWang(王占国),Quantumdotquantumcascadephotodetectorusingalaserstructure,Chin.Opt.Lett.15(10),102301(2017)6.Feng-JiaoWang,FeiRen,Shu-ManLiu*,NingZhuo,Shen-QiangZhai,Jun-QiLiu,Feng-QiLiu*andZhan-GuoWang,Temperatureindependentinfraredresponsivityofaquantumdotquantumcascadephotodetector,Appl.Phys.Lett.108,251103(2016)7.Feng-JiaoWang,FeiRen,Shu-ManLiu*,NingZhuo,Shen-QiangZhai,Jun-QiLiu,Feng-QiLiu*andZhan-GuoWang,NormalIncidentLongWaveInfraredQuantumDashQuantumCascadePhotodetector,NanoscaleResearchLetters(2016)11:3928.FeiRen,Feng-JiaoWang,Shu-ManLiu*,Zhen-DongNing,NingZhuo,Xiao-LingYe,Jun-QiLiu,Li-JunWang,Feng-QiLiu*,andZhan-GuoWang,Dual-wavelengthintersubbandelectroluminescencefromdouble-wellactivelayersinInGaAs/InAlAsquantumcascadestructures,AppliedPhysicsExpress9,052104(2016)9.Zhen-DongNing,Shu-ManLiu*,ShuaiLuo,FeiRen,Feng-JiaoWang,TaoYang,Feng-QiLiu,Zhan-GuoWang,Lian-ChengZhao,StructuralandopticalpropertiesofInAs/InAsSbsuperlatticesgrownbymetalorganicchemicalvapordepositionformid-wavelengthinfraredphotodetectors,AppliedSurfaceScience368(2016)110–11310.Zhen-DongNing,ShumanLiu*,FeiRen,FengjiaoWang,LijunWang,FengqiLiu,ZhanguoWang,LianchengZhao,GrowthandcharacterizationofInAs/InAsSbsuperlatticesbymetalorganicchemicalvapordepositionformid-wavelengthinfraredphotodetectors,Mater.Lett.164(2016)213–21611.Zhen-DongNing,ShumanLiu*,FeiRen,FengjiaoWang,LijunWang,FengqiLiu,ZhanguoWang,LianchengZhao,MetalorganicchemicalvapordepositiongrowthandcharacterizationofInAs/GaSbtype-IIsuperlatticesonGaAs(001)substrates,Mater.Lett.143(2015)223–22512.Li-gongLi,ShumanLiu*,Xiao-lingYe,MariusHossu,KeJiang,WeiChen,andZhan-guoWang,FormationMechanismandCharacterizationofBlackSiliconSurfacebyaSingle-StepWet-ChemicalProcess,J.Nanosci.Nanotechnol.,12(2012)3954-395813.Li-GongLi,ShumanLiu*,ShuaiLuo,TaoYang,Li-JunWang,Jun-QiLiu,Feng-QiLiu,Xiao-LingYe,BoXuandZhan-GuoWang,EffectofgrowthtemperatureonsurfacemorphologyandstructureofInAs/GaSbsuperlatticesgrownbymetalorganicchemicalvapordeposition,J.CrystalGrowth359(2012)55–5914.Li-GongLi,ShumanLiu*,ShuaiLuo,TaoYang,Li-JunWang,Feng-QiLiu,Xiao-LingYe,BoXuandZhan-GuoWang,MetalorganicchemicalvapordepositiongrowthofInAs/GaSbtypeIIsuperlatticeswithcontrollableAsxSb1-xinterfaces,NanoscaleResearchLett.,7(2012)16015.Li-GongLi,ShumanLiu*,ShuaiLuo,TaoYang,Li-JunWang,Feng-QiLiu,Xiao-LingYe,BoXuandZhan-GuoWang,FormationofAsxSb1−xmixinginterfacesinInAs/GaSbsuperlatticesgrownbymetalorganicchemicalvapordeposition,EPL(Euro.Phys.Lett.),97(2012)3600116.LiLi-Gong,ShumanLiu*,LuoShuai,YangTao,WangLi-Jun,LiuFeng-Qi,YeXiao-Ling,XuBo,WangZhan-Guo,MetalorganicChemicalVaporDepositionGrowthofInAs/GaSbSuperlatticesonGaAsSubstratesandDopingStudiesofP-GaSbandN-InAs,Chin.Phys.Lett.29(2012)076801标签:
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