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韩波
2023-05-16 10:52
  • 韩波
  • 韩波 - 副教授-中国地质大学(武汉)-材料与化学学院-个人资料

近期热点

资料介绍

个人简历


湖北仙桃人,1982年7月出生,2005年毕业于中国地质大学(武汉)应用化学专业,2010年在中国地质大学(武汉)获博士学位,2011.9-2012.9期间在新加坡国立大学化学系作博士后研究。主要从事计算化学与计算材料学方面的研究工作。研究领域涉及表面化学、能源材料、均相与多相催化等方面。已发表SCI论文20余篇(点击查看),发布美国专利2项、欧洲专利1项、日本专利1项。 \r
教育背景(Education)\r
学士\t2001.9-2005.6\t中国地质大学(武汉)材料与化学学院\t应用化学\r
硕士\t2005.9-2008.6\t中国地质大学(武汉)材料与化学学院\t应用化学\r
博士\t2008.9-2010.12\t中国地质大学(武汉)材料与化学学院\t岩石矿物材料学

研究领域


"""""1. 表面化学:1). 半导体表面功能薄膜的沉积行为和机理; 2). 异相/均相催化反应行为及先进催化剂的设计。\r
2. 电化学:1). 新型电极材料的研发; 2). 电化学过程的界面行为。"

近期论文


21.\t\r
Bo Han, Yubao Sun, Maohong Fan, Hansong Cheng*, “On the CO2 Capture in Water-Free Monoethanolamine Solution: An ab Initio Molecular Dynamics Study”. J. Phys. Chem. B, 117:5971-5977 (2013). 【IF= 3.607】 DOI: 10.1021/jp4022932 \r
20.\t\r
Huang Liang, Bo Han*, Bin Han, A. Derecskei-Kovacs, M. Xiao, X. Lei, M. L. O’Neill, R. M. Pearlstein, H. Chandra, Hansong Cheng*, “First-Principles Study of a Full Cycle of Atomic Layer Deposition of SiO2 Thin Films with Di(sec-butylamino)silane and Ozone”. J. Phys. Chem. C, 117:19454-19463 (2013). 【IF= 4.805】 DOI: 10.1021/jp405541x \r
19.\t\r
Gang Ni, Bo Han*, Hansong Cheng*, “Effect of Al Electronic Configuration on the SiO2 Thin Film Growth via Catalytic Self-Assembling Deposition”. J. Phys. Chem. C, 117:22705-22713 (2013). 【IF= 4.805】 DOI: 10.1021/jp405847r \r
18.\t\r
Bo Han, Qingfan Zhang, Jinping Wu, Bing Han, Eugene J. Karwacki, Agnes Derecskei, Manchao Xiao, Xinjian Lei, Mark L. O’Neill, Hansong Cheng*, “On the Mechanisms of SiO2 Thin-Film Growth by the Full Atomic Layer Deposition Process Using Bis(t-butylamino)silane on the Hydroxylated SiO2(001) Surface”, J. Phys. Chem. C, 116:947-952 (2012). 【IF= 4.805】 DOI: 10.1021/jp2094802 \r
17.\t\r
Ming Yang, Bo Han*, Hansong Cheng*, “First-Principles Study of Hydrogenation of Ethylene on a HxMoO3(010) Surface”. J. Phys. Chem. C, 116:24630-24638 (2012). 【IF= 4.805】 DOI: 10.1021/jp308255a \r
16.\t\r
Qinfan Zhang, Bo Han, Xiaowei Tang, Kevin Heier, Jimmy X. Li, John Hoffman, Minfa Lin, Stephanie L. Britton, Agnes Derecskei-Kovacs, Hansong Cheng*, “On the Mechanisms of Carbon Formation Reaction on Ni(111) Surface”, J. Phys. Chem. C 116:16522-16531 (2012) DOI: 10.1021/jp303648c \r
15.\t\r
Bo Han, Chenggang Zhou, Jinping Wu, D. J. Tempel, Hansong Cheng*, “Understanding CO2 Capture Mechanisms in Aqueous Monoethanolamine via First Principles Simulations”. J. Phys. Chem. Lett., 2:522-526 (2011). 【IF= 6.585】 DOI: 10.1021/jz200037s \r
14.\t\r
Qinfan Zhang, Bo Han, Kevin Heier, Jimmy X. Li, John Hoffman, Minfa Lin, Agnes Derecskei-Kovacs, Hansong Cheng*, “First Principles Study of Steam Carbon Reaction on γ-Fe(111) Surface”, J. Phys. Chem. C 115:12068-12076 (2011) DOI: 10.1021/jp2019507 \r
13.\t\r
Lei Chen, Gang Ni, Bo Han, Chenggang Zhou, Jinping Wu*, “Mechanism of Water Gas Shift Reaction on Fe3O4(111) Surface”. Acta Chim. Sinica, 69:393-398 (2011). full text \r
12.\t\r
Bo Han, Jinping Wu*, Chenggang Zhou, Bei Chen, Roy Gordon, Xinjian Lei, David A. Roberts, Hansong Cheng*, “First-principles Simulations of Conditions of Enhanced Adhesion Between Copper and TaN(111) Surfaces Using a Variety of Metallic Glue Materials”, Angew. Chem. Int. Ed., 49:148-152 (2010). 【IF= 13.734】 DOI: 10.1002/anie.200905360 \r
11.\t\r
Chenggang Zhou, Qingfan Zhang, Lei Chen, Bo Han, Gang Ni, Jinping Wu, Diwakar Garg, Hansong Cheng*, “Density Functional Theory Study of Water Dissociative Chemisorption on the Fe3O4(111) Surface”, J. Phys. Chem. C, 114:21405-21410 (2010). DOI: 10.1021/jp105040v \r
10.\t\r
Lei Chen, Qinfan Zhang, Yunfeng Zhang, Winston Z. Li, Bo Han, Chenggang Zhou, Jinping Wu*, Robert C. Forrey, Diwakar Garg, Hansong Cheng*, “A first principles study of water dissociation on small copper clusters”, Phys. Chem. Chem. Phys., 12:9845-9851 (2010). DOI: 10.1039/c001006e \r
9.\t\r
Bei Chen, Bo Han, Chenggang Zhou, Jinping Wu*, “A Molecular Dynamic Simulation on the Agglomeration Behavior of Cu on TaN(111) surface”. Earth Science, 34:635-640 (2009). full text \r
8.\t\r
Shujuan Yao, Chenggang Zhou, Bo Han, Ting Fan, Jinping Wu, Liang Chen, Hansong Cheng*. “Chemisorption of small fullerenes Cn (n=28,32,36,40,44,48,60) on the Si(001)-c(2x1) surface”. Phys. Rev. B, 79:155304 (2009). DOI: 10.1103/PhysRevB.79.155304 \r
7.\t\r
Jiaye Li, Jinping Wu, Chenggang Zhou, Bo Han, Xinjian Lei, Roy Gordon, Hansong Cheng*. “On the relative stability of cobalt- and nickel-based amidinate complexes against beta-migration”. Int. J. Quantum Chem. 109: 756-763 (2009). DOI: 10.1002/qua.21880 \r
6.\t\r
Bo Han, Jinping Wu*, Chenggang Zhou, Jiaye Li, Xinjian Lei, John A. T. Norman, Thomas R. Gaffney, Roy Gordon, David A. Roberts, Hansong Cheng*. “Ab Initio Molecular Dynamics Simulation on the Aggregation of a Cu Monolayer on a WN(001) Surface”. J. Phys. Chem. C, 112:9798-9802 (2008). 【IF= 4.805】 DOI: 10.1021/jp802979b \r
5.\t\r
Chenggang Zhou, Shujuan Yao, Bo Han, Liang Chen, Jinping Wu, Robert R. Forrey, and Hansong Cheng*, “A Mechanistic Study of CO Removal on a Small H-Saturated Platinum Cluster”, Science in China, Series B: Chemistry, 51:1187-1196 (2008). DOI: 10.1007/s11426-008-0135-z \r
4.\t\r
Shujuan Yao, Chenggang Zhou, Jinping Wu, Jiaye Li, Bo Han, Hansong Cheng*, “On the electronic structures and spectroscopic properties of polyyne and its derivatives”. Int. J. Quantum Chem., 108:1565-1571 (2008). DOI: 10.1002/qua.21697 \r
3.\t\r
Jiaye Li, Jinping Wu, Chenggang Zhou, Shujuan Yao, Bo Han, “Influence of Nitrogen Substituent of Amidinate Ligands to the Stability of Co(II) bis-amidinate ALD Precursors”. Acta Chim. Sinica, 66:165-169 (2008). full text \r
2.\t\r
Jinping Wu, Bo Han, Chenggang Zhou, Xinjian Lei, T. R. Gaffney, John A. T. Norman, Zhengwen Li, Roy Gordon, Hansong Cheng*. “Density Function Theory Study of Copper Agglomeration on the WN(001) Surface”. J. Phys. Chem. C, 111:9403-9406 (2007). DOI: 10.1021/jp072907q \r
1.\t\r
Chenggang Zhou, Jinping Wu, Bo Han, Shujuan Yao, Hansong Cheng*. “Adsorption of fullerenes Cn(n=32,36,40,44,48,60) on the GaAs(001)-c(4x4) reconstructed surface”. Phys. Rev. B, 73:195324 (2006). DOI: 10.1103/PhysRevB.73.195324 \r
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国际专利(International Patents)\r
1.\tCheng H, Lei X, Spence D, Norman J, Robert D, Han B, Zhou C, Wu J. \

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