个人简历

教育经历\r
2001.9 - 2005.7 电子科学与技术专业 本科(学士) 学士学位\r
2005.9 - 2008.3 凝聚态物理专业 硕士研究生 硕士学位\r
2009.9 - 2012.7 微电子学与固体电子学专业 博士研究生毕业 博士学位\r
\r
工作经历\r
2022.7 - 至今 扬州大学 物理科学与技术学院 教授\r
2016.12 - 2019.12 江苏精湛光电仪器股份有限公司 研发部 博士后\r
2016.9 - 2022.7 扬州大学 物理科学与技术学院 副教授\r
2012.6 - 2016.9 扬州大学 物理科学与技术学院 讲师

研究领域

"""""1）半导体光电子器件和电子器件的物理机理研究，如半导体发光二极管（LED），半导体激光器(LD），太阳能电池（Solar Cell)，半导体光电探测器（PD）以及高迁移率晶体管（HEMT）的物理机制和量子特性研究。\r
2) 化合物半导体光电器件的结构设计和性能优化。主要是基于基本的物理机制，通过能带工程和能带裁剪原理来进行设计和优化现有的光电子器件。\r
3）半导体光电子器件的应用。如激光雷达，激光加工以及激光农业等方面的应用"

近期论文

程立文,张家荣,陈志朋,刘鹏飞,陈海涛.Taper-tip double-layer grating antenna based on SiN-on-SOI with large scale-scanning range for LiDAR.Engineering Research Express,2022,第4卷第3期35059-35059.\r
\r
程立文,杨达,尧舜.Study of reflectivity and resistance properties of p-type distributed Bragg reflectors with composition graded interfaces.Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices,2022,202271-72.\r
\r
程立文,罗雨中,钱沁宇,吴曙东,陈海涛.Compact beam shaping design based on polarization plane multiplexing of semiconductor lasers.APPLIED OPTICS,2022,61(30)8994-8999.\r
\r
程立文,林星宇,李侦伟,杨达,张嘉仪,王俊迪,张家荣,姜昱如.Performance Enhancement of InGaN Light-Emitting Diodes with InGaN/GaN/InGaN Triangular Barriers.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,2021,10(8)\r
\r
程立文,张嘉仪,王俊迪,张俊,杨金彭,吴曙东,钱沁宇,陈海涛.Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN-GaN-InGaN barriers.JOURNAL OF APPLIED PHYSICS,2021,130(18)\r
\r
程立文,李侦伟,张嘉仪,林星宇,杨达,陈海涛,吴曙东,尧舜.Advantages of InGaN-GaN-InGaN Delta Barriers for InGaN-Based Laser Diodes.NANOMATERIALS,2021,11(8)\r
\r
程立文,张嘉仪,王俊迪,张俊,杨金彭,吴曙东,钱沁宇,陈海涛.Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN-GaN-InGaN barriers.JOURNAL OF APPLIED PHYSICS,2021,130(18)\r
\r
程立文,马剑,曹常锐,徐作政,兰天,杨金彭,徐仔全,曾祥华.Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers.CHINESE PHYSICS B,2018,27(8)\r
\r
程立文,吴曙东,夏长权,陈海涛.Efficiency droop improvement in InGaN light-emitting diodes with graded InGaN barriers of increasing indium composition.Journal of Applied Physics,2015,118(10)\r
\r
程立文,吴曙东,陈海涛.Electron Confinement and Hole Injection Improvement in InGaN/GaN Light-Emitting Diodes with Graded-Composition Last Quantum Barrier and Without Electron Blocking Layer.IEEE/OSA Journal of Display Technology,2015,11(9)753-758.\r
\r
程立文,Investigation of whether uniform carrier distribution in quantum wells can lead to higher performance in InGaN light-emitting diodes.Optical and Quantum Electronics,2016,48(1)1-.