个人简历

阿布来提•阿布力孜, 男，维吾尔族，理学博士，副教授，硕士研究生导师，1986年1月出生于新疆伽师县。2017年6月在武汉大学获凝聚态物理理学博士学位。2017年7月进入新疆大学物理科学与技术学院任教，主要研究方向是高性能薄膜晶体管及其相关问题研究，重点研究氧化物薄膜晶体管以及晶体管在传感器中的应用。目前主持国家自然科学基金2项，省部级项目2项，厅级项目1项，校级项目1项。从事科研工作以来在ACS Appl. Mater. Interfaces, Appl. Phys. Lett., IEEE Electron Device Letters, IEEE Transaction Electron Devices, Applied Surface Science, Journal of Physics D: Applied Physics 等顶级期刊上已发表SCI学术论文20篇，其中第一作者或通讯作者SCI论文9篇，国家发明专利一项。从参加工作以来，先后承担本科生基础物理、大学物理实验、大学物理和研究生半导体物理等课程的教学。

研究领域

高性能薄膜晶体管及其相关问题研究，重点研究氧化物薄膜晶体管以及晶体管在传感器中的应用。"授权专利
[1]廖蕾（导师），阿布来提·阿布力孜，刘传胜. 一种氢钝化氧化锌基双沟道层高性能薄膜晶体管及其制备方法：中国，授权发明专利，专利号：ZL201510866302.1
承担主要科研项目：
[1] 基于InGaZnO异质结双层氧化物薄膜晶体管的研制及其电输运性质研究 （No. 62064012）国家自然科学基金地区项目，2021.1-2024.12，35万，项目负责人，在研；
[2] 高性能氧化锌基薄膜晶体管的研制及相关问题的研究（No.61804131）国家自然科学基金青年项目，2019.1-2021.12，25万，项目负责人，在研；
[3] 高性能ZnO基氧化物薄膜晶体管制备及机理研究（No.2018D01C078）新疆维吾尔自治区自然科学基金项目，2018.7-2021.6，7万，项目负责人，在研；
[4] 基于InGaZnO 氧化物柔性薄膜晶体管的制备与光电特性的研究，新疆维吾尔自治区天山青年博士人才项目，2020.1-2022.12，10万元，项目负责人，在研；
[5] 基于ZnO透明薄膜场效应晶体管的制备及其性能研究（No. 111001/40008001）新疆维吾尔自治区百名优秀博士引进计划（天池博士）人才项目，2018.9-2021.8，10万，项目负责人，在研；
[6] 金属氧化物薄膜晶体管的制备和电学性能研究（No.BS180209）新疆大学博士科研启动基金项目，2019.1-2021.12，10万元，项目负责人，在研."

近期论文

(1)Ablat Abliz*, A. Rusul*, H. Duan, A. Maimaiti, L. Yang, M. Zhang, Z. Yang Investigation of the electrical properties and stability of HfInZnO thin-film transistors, Chinese Journal of Physics (2020 Just Accepted).
(2)Ablat Abliz*, D. Wan*, H. Duana, L. Yanga, M. Mamat, H. Chen, L. Xu “Low-frequency noise in high performances and stability of Li-doped ZnO thin-film transistors”, Journal of Physics D: Applied Physics, 53 (2020) 415110.
(3)Ablat Abliz*, “Effects of hydrogen plasma treatment on the electrical performances and reliability of InGaZnO thin-film transistors ”, Journal of Alloys and Compounds, 831 (2020) 154694.
(4)Ablat Abliz, L. Xu*, D. Wan, H. Duan, J. Wang, C. Wang, S. Luo, C. Liu*, “Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors”, Applied Surface Science, 475 (2019) 565-570.
(5)Ablat Abliz*, D. Wan, L. Yang, M. Mamat, H. Chen, L. Xu, C. Wang, H. Duan*, Investigation on the electrical performances and stability of W-doped ZnO thin-film transistors, Materials Science in Semiconductor Processing, 95 (2019) 54-58.
(6)Ablat Abliz, D. Wan, J.-Y. Chen, L. Xu, J. He, Y. Yang*, H. Duan, L. Liao*,“Enhanced reliability of InGaZnO thin film transistors through design of dual passivation layer”, IEEE Trans. Electron Devices, 65 (2018) 2844-2849.
(7)Ablat Abliz, Q. Gao, D. Wan, X. Liu, L. Xu, L. Liao*, C. Liu*, C. Jiang, X. Li, H. Chen, T. Guo, “Effects of nitrogen and hydrogen co-doping on the electrical performance and reliability of InGaZnO thin film transistors”, ACS Appl. Mater. Interfaces, 9 (2017) 10798-10804.
(8)Ablat Abliz, C.-W. Huang, J. Wang, L. Xu, L. Liao*, X. Xiao, W.-W. Wu, Z. Fan, C. Jiang, J. Li, S. Guo, C. Liu, T. Guo, “Rational design of ZnO:H/ZnO bilayer structure for high performance thin film transistors”, ACS Appl. Mater. Interfaces, 8 (2016) 7862-7868.
(9)Ablat Abliz, J. Wang, L. Xu, D. Wan, L. Liao*, C. Ye, C. Liu, C. Jiang, H. Chen, T. Guo, “Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer”, Appl. Phys. Lett.,108 (2016) 213501.
(10) D. Wan, B. Jiang, H. Huang, C. Chen Ablat Abliz, L. Liao*, “High voltage gain WSe2 complementary compact inverter with buried gate for local doping ”, IEEE Electron Devices Lett., 41 (2020) 944-947.
(11) X. Guo, H. Duan B. Cao, S. Lu, M. Long, F. Chen, Ablat Abliz, Z. Wu, Q. Jing, Q. Sun, C. C. Zhang, Cd12O12 cage cluster-assembled nanowires and band gap regulation: A first-principles investigation, Physics Letters A, 384 (2020), 126463.
(12) X. Guo, H. Duan B. Cao, S. Lu, M. Long, F. Chen, Ablat Abliz, Z. Wu, Q. Jing, Z. Z. Miao, X. Chen, Adsorption of small molecules on transition metal doped rhodium clusters Rh3X (X = 3d, 4d atom): a first-principles investigation, Molecular Physics, 118 (2020) e1746424.
(13) C. Zhang, H. Duan*, X. Lv, B. Cao, Ablat Abliz, Z. Wu1, M. Long, “Static and dynamical isomerization of Cu38 cluster”, Scientific Reports, 9 (2019) 7564.
(14) L. Y. Yang*, J. R. Xie, Ablat Abliz, J. Liu, R. Wu, S. S. Tang, S. Y. Wang, L. L. Wu , Y. Y. Zhu, “Hollow paramecium-like SnO2/TiO2 heterostructure designed for sodium storage” Journal of Solid State Chemistry, 274 (2019) 176-181.
(15) G. Li, Ablat Abliz, L. Xu, N. Andre, X. Liu, Y. Zeng, D. Flandre, L. Liao*, “Understanding hydrogen and nitrogen doping on active defects in amorphous InGaZnO thin film transistors”, Appl. Phys. Lett., 112(2018) 253504.
(16) D. Wan, X. Liu, Ablat Abliz, C. Liu, Y. Yang, W. Wu, G. Li, J. Li, H. Chen, T. Guo, L. Liao*,“Design of highly stable tungsten doped IZO thin film transistors with enhanced performance”, IEEE Trans. Electron Device, 65 (2018) 1018-1023.
(17) D. Wan, Ablat Abliz, M. Su, C. Liu, C. Jiang, G. Li, H. C., T. Guo, X. Liu, L. Liao*, “Low frequency noise analyses in high mobility a-InGaZnO/InSnO nano wire composite thin film transistors”, IEEE Electron Devices Lett., 32 (2017) 1540-1542.
(18) L. Xu,C.-W. Huang, Ablat Abliz, Y. Hua, L. Liao*, W.-W. Wu, X. Xiao, C. Jiang, W. Liu, J. Li, “The different roles of contact materials between oxidation inter-layer and doping effect for high performance ZnO thin film transistors”, Appl. Phys. Lett., 106 (2015) 051607.
(19) Z. Li, L. Xu, Ablat Abliz, Y. Hua, J. Li, Y. Shi*, W. Liu, L. Liao*,“Electrical properties in group IV elements doped ZnO thin film transistors”, J. Disp. Technol., 8 (2015) 670-673.