个人简历

冯丽萍，工学博士，西北工业大学教授，博士生导师。2001至2006年在西北工业大学分别获得学士、硕士和博士学位。2009年1月留在西北工业大学任教。2009年5月晋升为副教授。2010年至2011年，获法国国家科学研究中心（CNRS）项目资助，在法国弗朗士孔泰大学（Université de Franche-Comté）做博士后研究。2016年5月晋升为教授，同时被聘为博士生导师。是国家自然科学基金函评专家，是Advanced Materials、Advanced Functional Materials等多种国际重要学术期刊的通讯评阅人，是教育部博士硕士学位论文函评评阅人。是中国材料研究学会会员、中国电子学会会员、英国皇家化学学会会员。

研究领域

1. 新型二维纳米薄膜材料的制备； 2. 半导体光电器件的设计及制备； 3. 光电催化研究及清洁能源材料的制备； 4. 计算机模拟计算及材料性质预测。

近期论文

1. Li J, Wang Z, Wen Y, et al. High-performance near-infrared photodetector based on ultrathin Bi2O2Se nanosheets. Advanced Functional Materials, 2018, 28(10): 1706437. 2. Jiang B, Zou X, Su J, et al. Impact of thickness on contact issues for pinning effect in black phosphorus field-effect transistors. Advanced Functional Materials, 2018: 1801398. 3. Feng L P, Li A, Wang P C, et al. Novel two-dimensional semiconductor SnP3 with high carrier mobility, good light absorption, and strong interlayer quantum confinement. The Journal of Physical Chemistry C, 2018, 122(42): 24359-24367. 4. Zeng W, Feng L P, Su J, et al. Layer-controlled and atomically thin WS2 films prepared by sulfurization of atomic-layer-deposited WO3 films. Journal of Alloys and Compounds, 2018, 745: 834-839. 5. Feng L, Sun H, Li A, et al. Influence of Mo-vacancy concentration on the structural, electronic and optical properties of monolayer MoS2: A first-principles study. Materials Chemistry and Physics, 2018, 209: 146-151. 6. Chu J, Wang F, Yin L, et al. High-performance ultraviolet photodetector based on a few-layered 2D NiPS3 nanosheet. Advanced Functional Materials, 2017, 27(32): 1701342. 7．Su J, Feng LP, Zeng W, et al. Controlling the electronic and geometric structures of 2D insertions to realize high performance metal/insertion-MoS2 sandwich interfaces. Nanoscale, 2017, 9(22):7429-7441. 8. Su J, Feng LP, Zheng XQ, et al. A Promising Approach for High Performance of MoS2 Nanodevice: Doping the BN Buffer Layer to Eliminate the Schottky Barriers, ACS Applied Materials & Interfaces, 2017, 9: 40940-40948. 9. Su J, Feng LP, Liu SY, et al. Non-invasively improving the Schottky barriers of metal-MoS2 interfaces: effects of atomic vacancies in a BN buffer layer. Physical Chemistry Chemical Physics, 2017, 19(31): 20582-20592. 10. Su J, Feng LP, Zhang Y, et al. Defect induced gap states in monolayer MoS2 control the Schottky barriers of Pt-mMoS2 interfaces. Applied Physics Letters, 2017, 110(16):161604. 11. Feng LP, Su J, Liu ZT. Characteristics of lateral and hybrid heterostructures based on monolayer MoS2: a computational study. Physical Chemistry Chemical Physics, 2017, 19(6):4741-4750. 12. Su J, Feng LP, Zhang Y, et al.Schottky barrier engineering via adsorbing gases at the sulfur vacancies in the metal-MoS2 interface. Nanotechnology, 2017, 28(10):105204. 13. Feng LP, Jiang WZ, Su J, et al. Performance of field-effect transistors based on NbxW1-xS2 monolayers. Nanoscale, 2016, 8(12):6507-6513. 14. Su J, Feng LP, Zhang Y, et al. The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures. Physical Chemistry Chemical Physics, 2016, 18(25):16882-16889. 15. Su J, Feng LP, Zeng W, et al. Designing high performance metal-mMoS2 interfaces by two-dimensional insertions with suitable thickness. Physical Chemistry Chemical Physics, 2016, 18(45):31092-31100. 16. Su J, Feng LP, Pan HX, et al. Modulating the electronic properties of monolayer MoS2 through heterostructure with monolayer gray arsenic. Materials & Design, 2016, 96:257-262. 17. Li N, Feng LP, Li DP, et al. Optical and electrical properties of Al-WS2, films via H2S sulfurization of Al-WOx. Materials & Design, 2016, 92:129-134. 18. Su J, Feng LP, Liu ZT. Heterostructure consists of monolayer MoS2 and arsenene with novel electronic and optical conductivity. RSC Advances, 2016, 6(64):59633-59638. 19. Li N, Feng LP, Su J, et al. Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and Vulcanization. RSC Advances, 2016, 6(69):64879-64884.