个人简历

教育背景：2012.9---2017.12西安电子科技大学微电子学与固体电子学博士（硕博连读）

近期论文

[1].\tQingyangFan,*WenzhuZhang,SiningYun,*JieXu,andYanxingSong,III-Nitride
Polymorphs:XN(X=Al,Ga,In)inthePnmaPhase,Chemistry-AEuropeanJournal,2018,
24,17280–17287
[2].\tQingyangFan,*RuiNiu,WenzhuZhang,WeiZhang,YingchunDing,andSiningYun*,t-
Si64:ANovelSiliconAllotrope,ChemPhysChem2019,20,128–133201905-201906,
201907-201908连续两次入选ESI高被引论文
[3].\tQingyangFan*,JieXu,WenzhuZhang,YanxingSong,andSiningYun*,Physical
propertiesofgroup14semiconductoralloysinorthorhombicphase,JournalofApplied
Physics,2019,126,045709.
[4].\tQing-YangFan⁎,Run-LingYang,WeiZhang,Si-NingYun⁎,Elasticanisotropyand
thermalconductivityofsiliconallotropes,ResultsinPhysics,2019,15,102580.
[5].\tQingyangFan⁎,HuiqinWang,WenzhuZhang,MingfeiWei,YanxingSong,WeiZhang,
SiningYun⁎,Si–GealloysinC2/cphasewithtunabledirectbandgaps:Acomprehensive
study,CurrentAppliedPhysics2019,19,1325–1333.
[6].\tQingyangFan,ZhongxingDuan,YanxingSong,WeiZhang,QidongZhang,SiningYun,
Electronic,MechanicalandElasticAnisotropyPropertiesofX-Diamondyne(X=Si,Ge),
Materials2019,12,3589
[7].\tQingyangFan*,ChangchunChai,etal.,TheoreticalInvestigationsofGroupIVAlloysin
theLonsdaleitePhase.JournalofMaterialsScience,2018,53,2785–2801.
[8].\tQingyangFan*,ChangchunChai,etal.,TwonovelGephasesandtheirSi-Gealloys
withexcellentlyelectronicandopticalproperties,Materials&Design,2017,132,539–
551.
[9].\tQingyangFan,ChangchunChai,QunWei,etal.,Twonovelsiliconphaseswithdirect
bandgaps,PhysicalChemistryChemicalPhysics,2016,18,12905-12913.
[10].\tQingyangFan,ChangchunChai,etal.,Novelsiliconallotropes:Stability,mechanical,
andelectronicproperties,JournalofAppliedPhysics,2015,118,185704.
[11].\tQingyangFan*,ChangchunChai,etal.,TwoNovelC3N4Phases:Structural,
MechanicalandElectronicProperties,Materials,2016,9,427.
[12].\tQingyangFan*,ChangchunChai,etal.,Themechanicalandelectronicpropertiesof
carbon-richsiliconcarbide,Materials,2016,9,333.
[13].\tQingyangFan*,ChangchunChai,etal.,Si96:Anewsiliconallotropewithinteresting
physicalproperties,Materials,2016,9,284.
[14].\tQingyangFan,QunWei,etal.,ElasticandelectronicpropertiesofPbca-BN:First-
principlescalculations,ComputationalMaterialsScience,2014,85,80-87.
[15].\tQingyangFan,QunWei,ChangchunChai,etal.,Elasticandelectronicpropertiesof
Imm2-andI-4m2-BCN,ComputationalMaterialsScience,2015,97,6-13.
[16].\tQingyangFan,QunWei,ChangchunChai,etal.,Structural,mechanical,andelectronic
propertiesofP3m1-BCN,JournalofPhysicsandChemistryofSolids,2015,79,89-96.
[17].\tQingyangFan*,ChangchunChai,etal.,MechanicalandelectronicpropertiesofSi,Ge
andtheiralloysinP42/mnmstructure,MaterialsScienceinSemiconductorProcessing,
2016,43,187–195.
[18].\tQingyangFan,ChangchunChai,QunWei,etal.,Mechanicalandelectronicpropertiesof
Ca1-xMgxOalloys.MaterialsScienceinSemiconductorProcessing,2015,40,676-684.
[19].\tQingyangFan,ChangchunChai,etal.,Elasticanisotropyandelectronicpropertiesof
Si3N4underpressures.AIPAdvances,2016,6(8),文献号:085207
[20].\tQingyangFan,ChangchunChai,etal.,PredictionofnovelphaseofsiliconandSi–Ge
alloys,JournalofSolidStateChemistry,2016,233,471–483.(SCI:000369881200064，
ESI高被引论文)
[21].\tQingyangFan*,ChangchunChai,etal.,AnewphaseofGaN,JournalofChemistry,
2016,8612892.
[22].\tQingyangFan,QunWei,ChangchunChai,etal.,Anewpotentialsuperhardphaseof
OsN2,ActaPhysicaPolonicaA,2014,126,740-746.
[23].\tQingyangFan,QunWei,ChangchunChai,etal.,Structural,anisotropicand
thermodynamicpropertiesofboroncarbide:Firstprinciplescalculations,IndianJournal
ofPure&AppliedPhysics,2016,54,227-235.
[24].\tQingyangFan,QunWei,ChangchunChai,etal.,Theelasticanisotropicand
thermodynamicpropertiesofI4mm-B3C,ActaPhysicaPolonicaA,2016,129,103-108.
[25].\tQingyangFan,QunWei,ChangchunChai,etal.,First-principlesstudyofstructural,
elastic,anisotropic,andthermodynamicpropertiesofR3-B2C,ChineseJournalof
Physics,2015,53,100601.
[26].\tQingyangFan*,ChangchunChai,etal.,Thermodynamic,elastic,elasticanisotropyand
minimumthermalconductivityofβ-GaNunderhightemperature.ChineseJournalof
Physics,2017,55(2),400-411.
[27].\tQiankunWang,ChangchunChai,QingyangFan*,etal.,PhysicalPropertiesofC-Si
AlloysinC2/mStructure.CommunicationsinTheoreticalPhysics,2017,68(2),259-268.
(通讯作者)
[28].\tYanxingSong,ChangchunChai,QingyangFan*,WeiZhang,andYintangYang,Physical
propertiesofSi–GealloysinC2/mphase:acomprehensiveinvestigation,Journalof
Physics:CondensedMatter,2019,31,255703.(通讯作者)
[29].\tWeiZhang,ChangchunChai,QingyangFan*,etal.TheoreticalinvestigationsofGe1-
xSnxalloys(x=0,0.333,0.667,1)inP42/ncmphase.JournalofMaterialsScience,
2018,53,9611–9626.(通讯作者)
[30].\tChaigangBai,ChangchunChai,QingyangFan*,etal.,Anovelsiliconallotropein
monoclinicphase.Materials,2017,10,441.(通讯作者)
[31].\tChenxiHan,ChangchunChai,QingyangFan*,JionghaoYang,YintangYang,Structural,
Electronic,andThermodynamicPropertiesofTetragonalt-SixGe3-xN4,Materials,2018,
11,397.(通讯作者)
[32].\tWeiZhang,ChangchunChai,YanxingSong,QingyangFan*,YintangYang,Structural,
Mechanical,Anisotropic,andThermalPropertiesofAlAsinoC12andhP6Phasesunder
Pressure.Materials,2018,11,740.(通讯作者)
[33].\tXiangyangXu,ChangchunChai,QingyangFan*,etal.,TheoreticalpredictionofnewC–
SialloysinC2/m-20structure.ChinesePhysicsB,2017,26(4),046101.(通讯作者)
[34].\tYing-BoZhao,WeiZhang,Qing-YangFan*,PhysicalPropertiesofGroup14inP6222
Phase:First-PrinciplesCalculations,Commun.Theor.Phys.71(2019)1036–1046(通讯
作者)
[35].\tWeiZhang,ChangchunChai,QingyangFan*,YanxingSong,YintangYang,Twonovel
superhardcarbonallotropeswithhoneycombstructures,J.Appl.Phys.126,145704
(2019)(通讯作者)
[36].\tWeiZhang,ChangchunChai,QingyangFan*,YanxingSong,YintangYang,PBCF-
graphene:A2Dsp2hybridizedhoneycombcarbonallotropewithadirectbandgap,
ChemNanoMat,10.1002/cnma.201900645(通讯作者)