GaN器件与铁电薄膜集成技术取得重大突破，基于新型界面调控和极化耦合技术实现了大电流、极高沟道输运特性、低关态损耗的GaN增强型器件，成果发表在电子器件权威期刊IEEE Electron Devices Letters (SCI二区)。{Jiejie Zhu, et al.,Ferroelectric gate AlGaN/GaN E-mode HEMTs with high transport and sub-threshold performance, IEEE Electron Devices Letters, 2017, published online.} New! 祝杰杰的博士学位论文《氮化物MIS-HEMT器件界面工程研究》获陕西省电子学会优秀博士学位论文奖。New!GaN基绝缘栅器件界面表征研究取得重要进展，揭示了界面态俘获截面与陷阱激活能之间的指数变化规律，成果发表在应用物理领域权威期刊Applied Physics Letters (SCI二区)。{Jiejie Zhu, et al. Exponential dependence of capture cross section on activation energy for interface traps in Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures, Appl. Phys. Lett., 111(16): 163502.}New!
