个人简历

个人简介
XidianUniversity(西安电子科技大学),微电子学院，中国，教授，2019.3-现在
XidianUniversity(西安电子科技大学),微电子学院，中国，副教授，2018.3-2019.3
UniversityofCaliforniaBerkeley(加州大学伯克利分校),电子工程，美国,博士后,2017-2018
PurdueUniversity(普渡大学),电子工程,美国，博士,2012-2017
NanyangTechnologicalUniversity(南洋理工),新加坡，助研2010-2012
UESTC(电子科技大学),中国，本科,微电子技术,2006-2010
科研团队
先进半导体器件研究课题组，隶属郝跃院士以及张进成教授课题组，主要从事新型半导体器件研究。
招生要求
每年拟招收2名优秀博士生及5名优秀研究生从事半导体器件的研究探索。

研究领域

1．GaNHEMTandMOSHEMT:DCandRFPowerdevice
2．ALDDielectricEngineering
3．Negative-CapacitanceField-EffectTransistors
4．Ga2O3MOSFET
5．SemiconductorDeviceFabricationandCharacterization

近期论文

2020年：
1.Demonstrationofa2kVAl0.85Ga0.15NSchottkyBarrierDiodewithImprovedOn-currentandIdealityFactor
YanniZhang,JinchengZhang*,ZhihongLiu,ShengruiXu,KaiCheng,JingNing,ChunfuZhang,LeiZhang,PeijunMa,HongZhou*,andYueHao
IEEEElectronDeviceLetters,vol.41,no.3,pp.457-460,2020.
2.Normally-offβ-Ga2O3PowerMOSFETwithFerroelectricChargeStorageGateStackStructure
ZhaoqingFeng,XushengTian,ZheLi,ZhuangzhuangHu,YanniZhang,XuanwuKang,JingNing,YachaoZhang,ChunfuZhang,QianFeng*,HongZhou*,JinchengZhang*,andYueHao
IEEEElectronDeviceLetters,vol.41,no.3,pp.333-336,2020.
3.BeveledFluoridePlasmaTreatmentforVerticalβ-Ga2O3SchottkyBarrierDiodeWithHighReverseBlockingVoltageandLowTurn-OnVoltage
ZhuangzhuangHu,YuanjieLv,ChunyongZhao,QianFeng,ZhaoqingFeng,KuiDang,XushengTian,YachaoZhang,JingNing,HongZhou,XuanwuKang,JinchengZhang,andYueHao
IEEEElectronDeviceLetters,vol.41,no.3,pp.441-444,2020.
4.Lateralβ-Ga2O3MOSFETswithHighPowerFigureofMeritof277MW/cm2
YuanjieLv,HongyuLiu,XingyeZhou,YuangangWang,XuboSong,YuncongCai,QinglongYan,ChenluWang,ShixiongLiang,JinchengZhang,ZhihongFeng,HongZhou*,ShujunCai*,andYueHao
IEEEElectronDeviceLetters,vol.41,no.4,pp.537-540,2020.
5.LeakageCurrentMechanismsofGroove-TypeTungsten-AnodeGaNSBDswithUltraLowTurn-ONVoltageandLowReverseCurrent
YanniZhang，JinchengZhang*,HongZhou*,TaoZhang,HaiyongWang,ZhaoqingFeng,andYueHao
SolidStateElectronics,vol.169,pp.1-7,2020

2019年：
1.High-Voltageβ-Ga2O3SchottkyDiodewithArgon-ImplantedEdgeTermination
YangyangGao,AngLi,QianFeng*,ZhuangzhuangHu,ZhaoqingFeng,KeZhang,XiaoliLu,ChunfuZhang,HongZhou,WenxiangMu,ZhitaiJia,JinchengZhang*,YueHao
Nanoscaleresearchletters，vol.14,no.1,pp.8,2019.
2.ExperimentalandTheoreticalStudiesofMo/AuSchottkyContactonMechanicallyExfoliatedβ-Ga2O3ThinFilm
ZhuangzhuangHu,QianFeng*,ZhaoqingFeng,YuncongCai,YixianShen,GuangshuoYan,XiaoliLu,ChunfuZhang,HongZhou,JinchengZhang*,YueHao
Nanoscaleresearchletters，vol.14,no.1,pp.7,2019.
3.Areviewofthemostrecentprogressesofstate-of-artgalliumoxidepowerdevices(InvitedReview)
HongZhou,JinchengZhang*,ChunfuZhang,QianFeng,ShengleiZhao,PeijunMa,YueHao
JournalofSemiconductors,pp.1-18,2019.
4.HighperformanceLateralGaNSchottkyBarrierDiodeonSiliconSubstratewithLowTurn-onVoltageof0.31V,HighBreakdownVoltageof2.65kVandHighPowerFigure-of-Meritof2.65GW/cm2
TaoZhang,JinchengZhang*,HongZhou*,YachaoZhang,TangshengChen,KaiZhang,YiWang,KuiDang,ZhaokeBian,XiaolingDuan,JingNing,ShengleiZhao,andYueHao
AppliedPhysicsExpress,Vol.12,pp.046502,2019.
5.A>3kV/2.94mΩ•cm2andLowLeakageCurrentwithLowTurn-onVoltageLateralGaNSchottkyBarrierDiodeonSiliconSubstratewithAnodeEngineeringTechnique
TaoZhang,JinchengZhang*,HongZhou*,YiWang,TangshengChen,KaiZhang,YachaoZhang,KuiDang,ZhaokeBian,JinfengZhang,ShengruiXu,XiaolingDuan,JingNing,andYueHao
IEEEElectronDeviceLetters,Vol.40,no.10,pp.1583-1586,2019.
6.LateralGaNSchottkyBarrierDiodeforWirelessHigh-powerTransferApplicationwithHighRF/DCConversionEfficiency:FromCircuitConstructionandDeviceTechnologiestoSystemDemonstration
KuiDang,JinchengZhang*,HongZhou*,ShanYing,TaoZhang,JingNing,YachaoZhang,ZhaokeBian,JiaboChen,XiaolingDuan,ShengleiZhao,YueHao
IEEETransactiononIndustrialElectronics,Vol.xx,pp.xx,2019.
7.A5.8GHzHigh-powerandHigh-efficiencyRectifierCircuitwithLateralGaNSchottkyDiodeforWirelessPowerTransfer
KuiDang,JinchengZhang*,HongZhou*,SenHuang,TaoZhang,ZhaokeBian,YachaoZhang,XinhuaWang,ShengleiZhao,KeWei,andYueHao
IEEETransactiononPowerElectronics(Letter),Vol.35,no.3,2019.
8.High-PerformanceVerticalβ-Ga2O3SchottkyBarrierDiodewithImplantedEdgeTermination
HongZhou,QinglongYan,JinchengZhang*,YuanjieLv,ZhihongLiu,YanniZhang,KuiDang,PengfeiDong,ZhaoqingFeng,QianFeng,JingNing,ChunfuZhang,PeijunMaandYueHao
IEEEElectronDeviceLetters,Vol.40,no.11,pp.1788-1791,2019.
9.A800Vβ-Ga2O3Metal-Oxide-SemiconductorField-EffectTransistorwithHigh-PowerFigureofMeritofOver86.3MW/cm2
Z.Feng,Y.Cai,G.Yan,Z.Hu,K.Dang,Y.Zhang,Z.Lu,H.Cheng,X.Lian,Y.Xu,C.Zhang,Q.Feng*,H.Zhou*,J.Zhang*andY.Hao
Phys.StatusSolidiA-Appl.Mat.,vol.216,pp.1900421-1-1900421-6,2019.

2018年：
1.InvestigationoftemperaturedependentelectricalcharacteristicsonAu/Ni/β-Ga2O3Schottkydiodes
AngLi,QianFeng,JinchengZhang,ZhuangzhuangHu,ZhaoqingFeng,KeZhang,ChunfuZhang,HongZhou,andYueHao
SuperlatticesandMicrostructures,vol.119,pp.212-217,2018.

2.High-performancequasi-verticalGaNSchottkydiodewithlowturn-onvoltage
Zhao-KeBian,HongZhou,Sheng-RuiXu,TaoZhang,KuiDang,Jia-BoChen,Jin-ChengZhang,YueHao
SuperlatticesandMicrostructures,vol.125,pp.295-301,2018.

3.IntegrationandElectricalPropertiesofFerroelectricHf0.5Zr0.5O2ThinFilmonBulk-Ga2O3(−201)SubstrateforMemoryApplications
WenwuXiao,YuePeng,ShuaizhiZheng,QianFeng,HongZhou,ChunfuZhang,JinchengZhang,YueHao,MinLiao,YichunZhou
IEEEElectronDeviceLetters,vol.39,no.10,pp.1504-1507,2018.

4.Tin-assistedgrowthofε-Ga2O3filmandthefabricationofphotodetectorsonsapphiresubstratebyPLD
YuncongCai,KeZhang,QianFeng,YanZuo,ZhuangzhuangHu,ZhaoqingFeng,HongZhou,XiaoliLu,ChunfuZhang,WeihuaTang,JinchengZhang,YueHao
OpticalMaterialsExpress,vol.8,no.11,pp.3506-3517,2018.

5.Field-PlatedLateralβ-Ga2O3SchottkyBarrierDiodewithHighReverseBlockingVoltageofMoreThan3kVandHighDCPowerFigure-of-Meritof500MW/cm2
ZhuangzhuangHu,HongZhou*,QianFeng*,JinchengZhang*,ChunfuZhang,KuiDang,YuncongCai,ZhaoqingFeng,YangyangGaO,XuanwuKang,andYueHao
IEEEElectronDeviceLetters,vol.39,no.11,pp.1564-1567,2018.

6.A1.9kV/2.61mΩ·cm2LateralGaNSchottkyBarrierDiodeonSiliconSubstratewithTungstenAnodeandLowTurn-OnVoltageof0.35V
TaoZhang,JinchengZhang*,HongZhou*,TangshengChen,KaiZhang,ZhuangzhuangHu,ZhaokeBian,KuiDang,YiWang,LiZhang,JingNing,PeijunMa,YueHao
IEEEElectronDeviceLetters,vol.39,no.10,pp.1548-1551,2018.

7.Lateralβ-Ga2O3SchottkyBarrierDiodeonSapphireSubstrateWithReverseBlockingVoltageof1.7kV
ZhuangzhuangHu,HongZhou*,KuiDang,YuncongCai,ZhaoqingFeng,QianFeng,JinchengZhang*,YueHao,IEEEJournaloftheElectronDevicesSociety,vol.6,pp.815-820,2018.

8.AlGaN-ChannelGateInjectionTransistoronSiliconSubstratewithAdjustable4Vto7VThresholdVoltageand1.3kVBreakdownVoltage
LiZhang,HongZhou*,WeihangZhang,KuiDang,Taozhang,PeijunMa,XiaohuaMa,JinchengZhang*,andYueHao，IEEEElectronDeviceLetters,vol.39,no.7,pp.1026-1029,2018.

加入西电前：
Journals:

(1)HongZhou,KerryMaize,JinhyunNoh,AliShakouri,andPeideD.Ye,“Thermo-dynamicStudiesofβ-Ga2O3Nano-membraneField-effectTransistorsonDifferentSubstrates”,ACSOmega,vol.2,pp.7723-7729,2017.
(2)HongZhou,XiabingLou,KartnnSutherlin,JarrenSummers,KelsonD.Chabak,RoyG.GordonandPeideD.Ye,“DCandRFperformanceofAlGaN/GaNMOSHEMTswithdeepsub-micronT-gatesandatomiclayerepitaxyMgCaOasgatedielectric”,IEEEElectronDeviceLetters,vol.38,pp.1294-1297,2017.
(3)HongZhou,XiabingLou,SangBokKim,KelsonD.Chabak,RoyG.GordonandPeideD.Ye,“Enhancement-ModeAlGaN/GaNfin-MOSHEMTsonSiSubstratewithAtomicLayerEpitaxyMgCaO”,IEEEElectronDeviceLetters,vol.38,pp.1294-1297,2017.
(4)HongZhou,KerryMaize,GangQiu,AliShakouri,andPeideD.Ye,“β-Ga2O3onInsulatorField-effectTransistorswithDrainCurrentsExceeding1.5A/mmandTheirSelf-heatingEffect”,AppliedPhysicsLetters,vol.111,pp.092102-1-092102-4,2017.
(5)HongZhou,MengweiSi,SamiAlghamdi,GangQiu,LingmingYang,andPeideD.Ye,“HighPerformanceDepletion/Enhancement-Modeβ-Ga2O3onInsulator(GOOI)Field-effectTransistorswithRecordDrainCurrentsof600/450mA/mm”,IEEEElectronDeviceLetters,vol.38,pp.103-105,2017.
(6)HongZhou,SamiAlghamdi,MengweiSi,GangQiu,andPeideD.Ye,“Al2O3/(-201)β-Ga2O3InterfaceImprovementthroughPiranhaPretreatmentandPostDepositionAnnealing”,IEEEElectronDeviceLetters,vol.37,pp.1411-1414,Oct.2016.
(7)HongZhou,XiabingLou,NathanJ.Conrad,MengweiSi,HengWu,SamiAlghamdi,ShipingGuo,RoyG.Gordon,PeideD.Ye,“High-PerformanceInAlN/GaNMOSHEMTsEnabledbyAtomicLayerEpitaxyMgCaOasGateDielectric”,IEEEElectronDeviceLetters,vol.37,no.5,pp.556-559,May2016.
(8)HongZhou,YuchenDu,andPeideD.Ye,“IonicliquidgatingonatomiclayerdepositionpassivatedGaN:Ultra-highelectrondensityinducedhighdraincurrentandlowcontactresistance”,AppliedPhysicsLetters,vol.108,pp.202102-1-202102-5,May2016.
(9)HongZhou,GeokIngNg,ZhiHongLiu,andSubranmaniamArulkumaran,“Side-gateeffectsonthedirectcurrentandradiofrequencycharacteristicsofAlGaN/GaNhigh-electron-mobilitytransistoronsilicon”,AppliedPhysicsLetters,vol.99,pp.163505-1-163505-3,Oct.2011.
(10)HongZhou,GeokIngNg,ZhiHongLiu,andSubranmaniamArulkumaran,“ImprovedDevicePerformancebyPost-OxideAnnealinginALDAl2O3/AlGaN/GaNMetal-Insulator-SemiconductorHighElectronMobilityTransistoronSi”,AppliedPhysicsExpress,vol.4,pp.104102-1-104102-3,Sep.2011.
(11)HongZhou,MengweiSi,JinhyunNoh,KerryMaize,S.B.Kim,RoyGordon,AliShakouri,PeideD.Ye,“HystersisFreeNegativeCapacitanceHf0.5Zr0.5O2/Mg0.25Ca0.75O/AlGaN/GaNMOSHEMTsonSiSubstratewithDual-SweepSubthresholdSwing<60mV/dec”,IEEEElectronDeviceLetters,2017.(Submitted)
(12)Sung-JaeChang,HongZhou,NanboGong,DongminKang,JongwonLim,MengweiSi,PeideD.Ye,T.P.Ma,“Fin-widthEffectsonCharacteristicsofInGaAs-BasedVerticalIndependentDouble-GateTransistor”,IEEEElectronDeviceLetters,vol.38,pp.441-444,2017.
(13)M.Si,C.J.Su,C.Jiang,N.J.Conrad,H.Zhou,K.D.Maize,G.Qiu,C.T.Wu,A.Shakouri,P.D.Ye,“SteepSlopeMoS22DTransistors:NegativeCapacitanceandNegativeDifferentialResistance”,NatureNanotechnology,vol.13,no.1,pp.24-30,2018..
(14)MengweiSi,LingmingYang,HongZhou,PeideD.Ye,“β-Ga2O3Nano-membraneNegativeCapacitanceField-effectTransistorwithSteepSubthresholdSlopeforWideBandgapLogicApplications”,ACSOmega,vol.2,pp.7136-7140,2017.
(15)Jing-KaiQin,GangQiu,JieJian,HongZhou,Ling-MingYang,Cheng-YanXu,Hai-YanWang,andPeideD.Ye,“ControlledGrowthofLarge-Size2DSeleneneandItsElectronicandOptoelectronicApplications”,ACSNano,vol.11,pp.10222-10229,2017.
(16)MarufA.Bhuiyan,HongZhou,S.J.Chang,XiabingLou,XianGong,RongJiang,HuiqiGong,EnXiaZhang,C.H.Won,J.W.Lim,J.H.Lee,RoyG.Gordon,RobertA.Reed,D.M.Fleetwood,PeideYe,andT.P.Ma,“TotalIonizingDoseResponsesofGaN-basedHEMTswithDifferentChannelThicknessesandMOSHEMTswithEpitaxialMgCaOasGateDielectric”,IEEETransactionsonNuclearScience,vol.65,No.1,46-52,2018.
(17)XiabingLou,HongZhou,SangBokKim,SamiAlghamdi,XianGong,JunFeng,PeideD.Ye,RoyG.Gordon,“EpitaxialGrowthofMgCaOonGaNbyAtomicLayerDeposition”,NanoLetters,vol.16,pp.7650-7654,2016.
(18)GangQiu,YuchenDu,AdamCharnas,HongZhou,ShengyuJin,ZheLuo,DmitryZemlyanov,XianfanXu,GaryCheng,PeideD.Ye,“ObservationofOpticalandElectricalIn-planeAnisotropyinHigh-mobilityFew-layerZrTe5”,NanoLetters,vol.16,pp.7364-7369,2016.
(19)YuchenDu,AdamT.Neal,HongZhouandPeideD.Ye,“WeakLocalizationinFew-LayerBlackPhosphorus”,2DMaterials,vol.3,pp.024003,Mar.2016.
(20)YuchenDu,LingmingYang,HongZhouandPeideD.Ye,“PerformanceEnhancementofBlackPhosphorusField-EffectTransistorsbyChemicalDoping”,IEEEElectronDeviceLetters,vol.37,pp.429-432,Mar.2016.
(21)YuchenDu,AdamT.Neal,HongZhouandPeideD.Ye,“Transportstudiesin2Dtransitionmetaldichalcogenidesandblackphosphorus”,J.ofPhysics:CondensedMatter,vol.28,pp.263002,May2016.
(22)ZhihongLiu,GeokIngNg,HongZhou,SubranmaniamArulkumaran,“ReducedsurfaceleakagecurrentandtrappingeffectsinAlGaN/GaNhighelectronmobilitytransistorsonsiliconwithSiN/Al2O3passivation”,AppliedPhysicsLetters,vol.98,pp.113506-1-113506-3,Oct.2011.
(23)ZhihongLiu,GeokIngNg,SubranmaniamArulkumaran,YrikleterraManung,HongZhou,“Temperature-dependentforwardgatecurrenttransportinALDAl2O3/AlGaN/GaNmetal-insulator-semiconductorhighelectronmobilitytransistor”,AppliedPhysicsLetters,vol.98,pp.163105-1-163105-3,April2011.
(24)DaewoongKwon,KorokChatterjee,AvaJTan,AjayKYadav,HongZhou,AngadaBSachid,RobertoDosReis,ChenmingHu,SayeefSalahuddin,“ImprovedSubthresholdSwingandShortChannelEffectinFDSOIn-ChannelNegativeCapacitanceFieldEffectTransistors”,IEEEElectronDeviceLetters,vol.39,no.2,pp.300-303,Jan.2018.

Conferences:
(1)HongZhou,DaewoongKwon,AngadaB.Sachid,YuhungLiao,KorokChatterjee,AvaJ.Tan,AjayK.Yadav,ChenmingHu,andSayeefSalahuddin,\