个人简历

邹新波2007年本科毕业于北京邮电大学电子工程学院，2013年获得香港科技大学电子与计算机工程学系博士学位。随后他在香港科技大学高等研究院从事博士后研究。2014年至2017他在香港科技大学电子与计算机工程学系担任研究助理教授，同期入选高等研究院青年学人计划。邹博士主要的研究兴趣是氮化镓的材料表征，器件先进工艺以及器件物理的研究。邹博士在香港科技大学学习与工作期间有数项工作为世界首创，包括首枚硅基氮化镓黄光二极管，首枚硅基氮化镓全垂直结构p-i-n二极管等。邹博士至今已发表文章20余篇，并主持一项香港研究资助局优配研究金项目。从2017年9月起邹博士受聘于上海科技大学信息科学与技术学院担任助理教授，研究员

研究领域

GaN电力电子器件及系统
宽禁带半导体光源
GaN纳米线器件及阵列

近期论文

LuXing,ZhangXu,JiangHuaxing,ZouXinbo,etal.,“Verticalbeta-Ga2O3SchottkyBarrierDiodeswithEnhancedBreakdownVoltageandHighSwitchingPerformance”,PhysicaStatusSolidiA-ApplicationsandMaterialsScience,2019.
ZhangXu,LiPeian,ZouXinbo,etal.,“ActiveMatrixMonolithicLEDMicro-DisplayUsingGaN-on-SiEpilayers”,IEEEPhotonicsTechnologyLetters,vol.31,no.11,pp.865-868,2019.
XuZhang,XinboZou,XingLu,ChakWahTangandKeiMayLau,“Fully-andQuasi-VerticalGaN-on-Sip-i-nDiodes:HighPerformanceandComprehensiveComparison”,IEEETransactionsonElectronDevices,vol.64,no.3,pp.809-815,2017.
PakSanYip,XinboZou,WaiChingCho,KamLamWuandKeiMayLau“TransistorsandTunnelDiodesEnabledbyLarge-ScaleMoS2NanosheetsGrownonGaN”,SemiconductorScienceandTechnology,vol.32,no.7,2017.
XinboZou,XuZhang,XingLu,ChakWahTangandKeiMayLau,“BreakdownRuggednessofQuasi-verticalGaN-basedp-i-nDiodesonSisubstrates”,IEEEElectronDeviceLetters,vol.37,no.9,pp.1158-1161,September2016.
XinboZou,XuZhang,W.C.Chong,ChakWahTangandKeiMayLau,“VerticalLEDsonRigidandFlexibleSubstratesusingGaN-on-SiEpilayersandAu-freeBonding”,IEEETransactionsonElectronDevices,vol.63,no.4,pp.1587-1593,April2016.
XinboZou,XuZhang,XingLu,ChakWahTangandKeiMayLau,“Fully-verticalGaNp-i-nDiodesusingGaN-on-SiEpilayers”,IEEEElectronDeviceLetters,vol.37,no.5,pp.636-639,May2016.
XinboZou,YuefeiCai,WingCheungChongandKeiMayLau,“FabricationandCharacterizationofHighVoltageLEDsusingPhotoresist-filled-trenchTechnique”,IEEE/OSAJournalofDisplayTechnology,vol.12,no.4,pp.397-401,April2016.
XinboZou,XingLu,RyanLucas,ThomasF.Kuech,JonathanW.Choi,PadmaGopalanandKeiMayLau,“GrowthandCharacterizationofHorizontalGaNWiresonSilicon”,AppliedPhysicsLetters,vol.104,no.26,June2014.
XinboZou,KaMingWong,WingCheungChong,JunMaandKeiMayLau,“High-efficiencyblueandgreenLEDsgrownonSiwith5micrometerthickGaNbuffer”,physicastatussolidi,vol.11,no.3-4,p.730,2014.
XinboZou,KaMingWong,XueliangZhu,WingCheungChong,JunMa,andKeiMayLau,“High-PerformanceGreenandYellowLEDsGrownonSiO2NanorodPatternedGaN/SiTemplates”,IEEEElectronDeviceLetters,vol.34,no.7,pp.903,July2013.
XinboZou,KaMingWong,NaisenYu,PengChen,KeiMayLau,“ImprovedCrystallineQualityandLightOutputPowerofGaN-basedLEDsGrownonSibyBufferOptimization”,PhysicaStatusSolidi,vol.9,no.3-4,pp.572,March2012.
XinboZou,HuLiangandKeiMayLau,“LightextractionenhancementfromGaN-basedthin-filmLEDsgrownonsiliconaftersubstrateremovalusingHNAsolution”,PhysicaStatusSolidi,vol.7,no.7-8,pp.2171,2010.
KaMingWong,XinboZou,ChenPeng,andKeiMayLau,“TransferofGaN-basedlight-emittingdiodesfromsilicongrowthsubstratetocopper”,IEEEElectronDeviceLetters,Vol.31,No.2,2010.
KeiMayLau,KaMingWong,XinboZou,andPengChen,“PerformanceimprovementofGaN-basedlight-emittingdiodesgrownonpatternedSisubstratetransferredtocopper”,OpticsExpress,vol.19,no.S4,pp.A956-A961,2011