个人简历

教育背景 Ph.D. Electrical Engineering, Case Western Reserve University, Ohio, USA (2016) B.E. Electrical Engineering, Tianjin University, Tianjin, China (2011) 工作经历 2018 – pres. Assistant Professor of Electrical Engineering, UM-SJTU Joint Institute, Shanghai Jiao Tong University 2016 – 2018 Postdoctoral Scholar, Electrical Engineering, Stanford University

研究领域

Emerging nonvolatile memories such as resistive random-access memory (RRAM), as well as monolithic 3D integration for energy-efficient computing Resonant nanoelectromechanical systems (NEMS) for sensing and RF signal processing Flexible electronic devices based on 2D materials Single crystal metallic materials on amorphous insulating substrates

近期论文

R. Yang, H. Li, K. K. H. Smithe, T. R. Kim, K. Okabe, E. Pop, J. A. Fan, H.-S. P. Wong, “Ternary Content-Addressable Memory with MoS2 Transistors for Massively Parallel Data Search”, Nature Electronics 2, 108-114 (2019). J. Lee†, Z. Wang†, K. He, R. Yang, J. Shan, P. X.-L. Feng, “Electrically Tunable Single- and Few-Layer MoS2 Nanoelectromechanical Systems with Broad Dynamic Range”, Science Advances 4: eaao6653 (2018). K. Zhang†, X. B. Pitner†, R. Yang, W. D. Nix, J. D. Plummer, J. A. Fan, “Single Crystal Metal Growth on Amorphous Insulating Substrates”, Proceedings of the National Academy of Sciences (PNAS) 115, 685-689 (2018). R. Yang, J. Lee, S. Ghosh, H. Tang, R. M. Sankaran, C. A. Zorman, P. X.-L. Feng, “Tuning Optical Signatures of Single-and Few-Layer MoS2 by Blown-Bubble Bulge Straining up to Fracture”, Nano Letters 17, 4568-4575 (2017). R. Yang, H. Li, K. K. H. Smithe, T. R. Kim, K. Okabe, E. Pop, J. A. Fan, H.-S. P. Wong, “2D Molybdenum Disulfide (MoS2) Transistors Driving RRAMs with 1T1R Configuration”, Int. Electron Devices Meeting (IEDM), 477-480, San Francisco, Dec. 2-6 (2017). Featured by IEEE Spectrum R. Yang, C. Chen, J. Lee, D. A. Czaplewski, P. X.-L. Feng, “Local-Gate Electrical Actuation, Detection, and Tuning of Atomic-Layer MoS2 Nanoelectromechanical Resonators”, in 30th IEEE Int. Conf. on Micro Electro Mechanical Systems (MEMS 2017), 163-166, Las Vegas, Jan. 22-26 (2017) (+talk, selection rate 10%). Z. Wang, H. Jia, X. Zheng, R. Yang, G. J. Ye, X. H. Chen, P. X.-L. Feng, “Resolving and Tuning Mechanical Anisotropy in Black Phosphorus via Nanomechanical Multimode Resonance Spectromicroscopy”, Nano Letters 16, 5394-5400 (2016). H. Jia, R. Yang, A. E. Nguyen, S. N. Alvillar, T. Empante, L. Bartels, P. X.-L. Feng, “Large-Scale Arrays of Single- and Few-Layer MoS2 Nanomechanical Resonators”, Nanoscale 8, 10677-10685 (2016). R. Yang, A. Islam, P. X.-L. Feng, “Electromechanical Coupling and Design Considerations in Single-Layer MoS2 Suspended-Channel Transistors and Resonators”, Nanoscale 7, 19921-19929 (2015). R. Yang, T. He, M. A. Tupta, C. Marcoux, P. Andreucci, L. Duraffourg, P. X.-L. Feng, “Probing Contact-Mode Characteristics of Silicon Nanowire Electromechanical Systems with Embedded Piezoresistive Transducers”, Journal of Micromechanics and Microengineering 25, 095014 (2015). Featured as Cover Article R. Yang, C. A. Zorman, P. X.-L. Feng, “High Frequency Torsional-Mode Nanomechanical Resonators Enabled by Very Thin Nanocrystalline Diamond Diaphragms”, Diamond and Related Materials 54, 19-25 (2015). R. Yang, Z. Wang, P. X.-L. Feng, “Electrical Breakdown of Multilayer MoS2 Field-Effect Transistors with Thickness-Dependent Mobility”, Nanoscale 6, 12383-12390 (2014). R. Yang†, X. Zheng†, Z. Wang, P. X.-L. Feng, “Multilayer MoS2 Transistors Enabled by a Facile Dry-Transfer Technique and Thermal Annealing”, Journal of Vacuum Science and Technology B 32, 061203 (2014). †Equal Contribution. Featured as Cover Article, Editor’s Pick and Most Read Article R. Yang, Z. Wang, J. Lee, K. Ladhane, D. J. Young, P. X.-L. Feng, “6H-SiC Microdisk Torsional Resonators in a “Smart-cut” Technology”, Applied Physics Letters 104, 091906 (2014).