个人简历

教育背景\r
2004年8月 - 2009年7月 中国科学院物理研究所，博士\r
1999年9月 - 2003年7月 清华大学材料科学与工程系，学士\r
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工作履历\r
2018年12月 - 至今 清华大学材料学院，副教授\r
2015年5月 - 2018年10月 荷兰莱顿大学化学所，Veni学者\r
2014年10月 - 2015年4月 德国于利希研究中心，洪堡学者\r
2009年8月 - 2014年9月 瑞士巴塞尔大学物理系，博士后

研究领域

纳电子生物化学传感器\r
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高灵敏单分子检测\r
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功能化纳电子器件""

近期论文

L. Jiang, W. Fu (co-first author), Y. Y. Birdja, M. T. M. Koper, and G. F. Schneider,* “Quantum and electrochemical interplays in hydrogenated graphene”, Nat. Commun. 2018, 9, 793.\r
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W. Fu,* L. Feng, G. Panaitov, D. Kireev, D. Mayer, A. Offenh?usser, and H.-J. Krause, “Biosensing near the neutrality point of graphene”, Sci. Adv. 2017, 3, e1701247.\r
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W. Fu, T. F. van Dijkman, L. Lima, F. Jiang, G. F. Schneider, and E. Bouwman, “Ultrasensitive ethene detector based on a graphene-copper(I) hybrid material”, Nano Lett. 2017, 10.1021/acs.nanolett.7b04466.\r
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D. Kireev, M. Brambach, S. Seyock, V. Maybeck, W. Fu, B. Wolfrum, and A. Offenh?usser, “Graphene transistors for interfacing with cells: towards a deeper understanding of liquid gating and sensitivity”, Sci. Rep. 2017, 7, 6658.\r
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W. Fu,* L. Feng, D. Mayer, G. Panaitov, D. Kireev, A. Offenh?usser, and H.-J. Krause, “Electrolyte-gated graphene ambipolar frequency multipliers for biochemical sensing”, Nano Lett. 2016, 16, 2295.\r
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W. Fu, L. Jiang, E. van Geest, L. Lima, and G. F. Schneider,* “Sensing at the surface of a graphene field-effect transistor”, Adv. Mater. 2016, 10.1002/adma.201603610.\r
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W. Fu,* P. Makk, R. Maurand, M. Br?uninger, and C. Sch?nenberger,* “Large-scale fabrication of BN tunnel barriers for graphene spintronics”, J. Appl. Phys. 2014, 116, 074306.\r
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W. Fu,* El M. Abbassi, T. Hasler, M. Jung, M. Steinacher, M. Calame, C. Sch?nenberger,* G. Puebla-Hellmann, S. Hellmüller, T. Ihn, and A. Wallraff, “Electrolyte gate dependent high-frequency measurement of graphene FETs for sensing applications”, Appl. Phys. Lett. 2014, 104, 013102.\r
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R. Pantelic,* W. Fu (co-first author), C. Sch?nenberger, H. Stahlberg, “Rendering graphene supports hydrophilic with non-covalent aromatic functionalization for transmission electron microscopy”, Appl. Phys. Lett. 2014, 104, 134103.\r
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W. Fu, C. Nef, A. Tarasov, M. Wipf, R. Stoop, O. Knopfmacher, M. Weiss, M. Calame, and C. Sch?nenberger,* “High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalization”, Nanoscale 2013, 5, 12104.\r
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X. Zhang, W. Fu, C. Palivan,* W. Meier,* “Natural channel protein inserts and functions in a completely artificial, solid-supported bilayer membrane”, Sci. Rep. 2013, 3, 2196.\r
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F. Valmorra,* G. Scalari,* C. Maissen, W. Fu, C. Sch?nenberger, J. W. Choi, H. G. Park, M. Beck, and J. Faist,* “Low-Bias active control of terahertz waves by coupling large-area CVD graphene to a terahertz metamaterial”, Nano Lett. 2013, 13, 3193.\r
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W. Fu, C. Nef, O. Knopfmacher, A. Tarasov, M. Weiss, M. Calame, and C. Sch?nenberger,* “Graphene transistors are insensitive to pH changes in solution”, Nano Lett. 2011, 11, 3597.\r
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W. Fu, S. Y. Qin, L. Liu, T. H. Kim, S. Hellstrom, W. L. Wang,* W. J. Liang, X. D. Bai, A. P. Li,* and E. G. Wang,* “Ferroelectric Gated Electrical Transport in CdS Nanotetrapods”, Nano Lett. 2011, 11, 1913.\r
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W. Fu, Z. Xu, X. D. Bai,* C. Z. Gu, and E. G. Wang,* “Intrinsic memory function of carbon nanotube-based ferroelectric field-effect transistor”, Nano Lett. 2009, 9, 921.\r
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W. Fu, L. Liu, X. D. Bai,* and E. G. Wang,* “Two-bit ferroelectric field-effect transistor memories assembled on individual nanotubes”, Nanotechnology 2009, 20, 475305.\r
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W. Fu, Z. Xu, K. H. Liu, W. L. Wang, X. D. Bai,* and E. G. Wang,* “Nanowire field-effect transistor with Bi1.5Zn1.0Nb1.5O7 dielectric”, Appl. Phys. Lett. 2008, 93, 213107.\r
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W. Fu, H. Wang, L. Z. Cao, and Y. L. Zhou,* “Bi1.5Zn1.0Nb1.5O7/Mn-doped Ba0.6Sr0.4TiO3 heterolayered thin films with enhanced performance”, Appl. Phys. Lett. 2008, 92, 182910.\r
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W. Fu, L. Z. Cao, S. F. Wang, Z. H. Sun, B. L. Cheng, Q. Wang, and H. Wang,* “Dielectric properties of Bi1.5Zn1.0Nb1.5O7/Mn-doped Ba0.6Sr0.4TiO3 heterolayered films grown by pulsed laser deposition”, Appl. Phys. Lett. 2006, 89, 132908.