个人简历

教育背景\r
2002, 工学博士, 清华大学材料系材料物理与化学专业\r
1994, 工学硕士, 中科院上海微系统所材料物理专业\r
1991, 工学学士, 华中科技大学固体电子学系半导体物理与器件\r
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工作履历\r
2002-至今, 清华大学材料学（系）院\r
1996-1999, 讲师, 中南大学材料系\r
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学术兼职\r
中国真空学会理事

研究领域

"功能薄膜材料界面效应，存储、记忆与学习效应，材料的掺杂技术与理化性质。"

近期论文

Wan, Q.; Zeng, F.; Yin, J.; Sun, Y. M.; Hu, Y. D.; Liu, J. L.; Wang, Y. C.; Li, G. Q.; Guo, D.; Pan, F., Phase-change Nano-clusters Embedded Memristor for Simulating Synaptic Learning. Nanoscale 2019, 11, 5684-5692.\r
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Yin, J.; Zeng, F.; Wan, Q.; Li, F.; Sun, Y. M.; Hu, Y. D.; Liu, J. L.; Li, G. Q.; Pan, F., Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity. Adv. Funct. Mater. 2018, 28, 1706927.\r
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Hu, Y. D.; Zeng, F.; Chang, C. T.; Dong, W. S.; Li, X. J.; Pan, F.; Li, G. Q., Diverse Synaptic Plasticity Induced by Interplay of Ionic Polarization and Doping at Salt-Doped Electrolyte/Semiconducting Polymer Interface. ACS Omega 2017, 2, 746-754.\r
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Chang, C. T.; Zeng, F.; Li, J. X.; Dong, W. S.; Hu, Y. D.; Li, G. Q., Spatial summation of the short-term plasticity of a pair of organic heterogeneous junctions. RSC Adv. 2017, 7, 4017.\r
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Chang, C. T.; Zeng, F.; Li, X. J.; Dong, W. S.; Lu, S. H.; Gao, S.; Pan, F., Simulation of synaptic short-term plasticity using Ba(CF3SO3)2-doped polyethylene oxide electrolyte film. Sci. Rep. 2016, 5, 18915.\r
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Dong, W. S.; Zeng, F.; Lu, S. H.; Liu, A.; Li, X. J.; Pan, F., Frequency-dependent learning achieved using semiconducting polymer/electrolyte composite cells. Nanoscale 2015, 7, 16880 - 16889.\r
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Tang, G. S.; Zeng, F.; Chen, C.; Liu, H. Y.; Gao, S.; Song, C.; Lin, Y. S.; Chen, G.; Pan, F., Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer. Nanoscale 2013, 5, 422-428.\r
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Gao, S.; Zeng, F.; Li, F.; Wang, M. J.; Mao, H. J.; Wang, G. Y.; Song, C.; Pan, F., forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application. Nanoscale 2015, 7, 6031-6038.\r
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Li, S. Z.; Zeng, F.; Chen, C.; Liu, H.; Tang, G. S.; Gao, S.; Song, C.; Lin, Y. S.; Pan, F.; Guo, D., Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system. J. Mater. Chem. C 2013, 1, 5292-5298.\r
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Wang, Z. S.; Zeng, F.; Yang, J.; Chen, C.; Pan, F., Resistive switching induced by metallic filaments formation through poly (3, 4-ethylene-dioxythiophene): poly (styrenesulfonate). ACS Appl. Mater. & Interfaces 2012, 4, 447-453.\r
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Zeng, F.; Li, S. Z.; Yang, J.; Pan, F.; Guo, D., Learning processes modulated by the interface effects in a Ti/conducting polymer/Ti resistive switching cell. RSC Adv. 2014, 4, 14822.\r
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Zeng, F.; Lu, S. H.; Li, S. Z.; Li, X. J.; Pan, F., Frequency Selectivity in Pulse Responses of Pt/Poly(3-Hexylthiophene-2,5-Diyl)/Polyethylene Oxide + Li+/Pt Hetero-Junction. PLoS ONE 2014, 9, e108316.\r
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Wang, Z. S.; Zeng, F.; Yang, J.; Chen, C.; Yang, Y. C.; Pan, F., Reproducible and controllable organic resistive memory based on Al/poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate)/Al structure. Appl. Phys. Lett. 2010, 97, 253301.\r
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Chen, C.; Gao, S.; Zeng, F.; Wang, G. Y.; Li, S. Z.; Song, C.; Pan, F., Conductance quantization in oxygen-anion-migration-based resistive switching memory devices. Appl. Phys. Lett. 2013, 103, 043510.\r
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Gao, S.; Zeng, F.; Wang, M. J.; Wang, G. Y.; Song, C.; Pan, F., Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch. Sci. Rep. 2015, 5, 15467.