个人简历

单福凯，男，1971年2月生，山东临沂人，青岛大学学术委员会委员，青岛大学电子信息学院副院长，青岛大学电子信息学术委员会主任，青岛大学印刷平板显示技术研究所所长，国际显示学会（SID，SocietyforInformationDisplay）技术委员会委员。于2000年获复旦大学理学博士学位；2000-2014年先后在韩国釜山大学和东义大学从事半导体器件研究，现已发表SCI文章100余篇，其中署名为第一作者和通信作者的有80余篇，被他人引用超过2000次，单篇最高他引200多次；以第一发明人申报国家发明专利12项，已授权9项。《AdvancedFunctionalMaterials》、《AppliedPhysicsLetters》、《NPGAsiaMaterials》等国际著名SCI期刊的审稿人。目前主持国家自然科学基金面上项目2项(2015-2018,2017-2020)，山东省自然基金2项。主要研究方向：宽禁带半导体薄膜材料；高k值介电材料；锂离子电池材料及半导体器件的集成，其中包括薄膜晶体管、光电探测器、锂离子电池等。（简介截止到2017年3月1日）。
目前本课题组的研究方向为固体电子学与微电子学方向。研究重点是超高性能平板显示器件中的柔性透明薄膜晶体管的研究。本课题组主要实验设备包括：磁控溅射系统、离子束溅射系统、熔胶凝胶系统、等离子体清洗系统、热蒸发系统、静电纺丝系统，光刻机、蔡司光学显微镜，真空管式炉、马弗炉、超高精度半导体参数测试系统（测量精度达到10fA）、超高精度阻抗参数测量系统等。
欢迎有志于在微电子器件领域进一步深造的研究生和本科生加入我们课题组。联系email：fkshan@qdu.edu.cn

近期论文

近年发表学术论文如下：
2017
1.YouMeng,GuoxiaLiu*,AoLiu,ZidongGuo,WenjiaSunandFukaiShan*(Correspondence),PhotochemicalactivationofelectrospunIn2O3nanofibersforhigh-performanceelectronicdevices,ACSAppliedMateials&Interfaces,Accepted.2017.03.01.
2.AoLiu,ZidongGuo,GuoxiaLiu*,ChundanZhu,HuihuiZhu,ByoungchulShin,ElviraFortunato,RodrigoMartins,FukaiShan*(Correspondence),Redoxchlorideeliminationreaction:facilesolutionrouteforindium-freee,low-voltage,andhigh-performancetransistors,AdvancedElectronicMaterials,http://dx.doi.org/10.1002/aelm.201600513/
3.HuihuiZhu,AoLiu,FukaiShan*(Correspondence),WenrongYang,ColinBarrowandJingquanLiu*,Directtransferofgraphemeandapplicationinlow-voltagehybridtransistors,RSCAdvances,7(2017)2172-2179.
4.AoLiu,ShengbinNie,GuoxiaLiu,HuihuiZhu,ChundanZhu,ByoungchulShin,ElviraFortunato,RodrigomartinsandFukaiShan*(Correspondence),Insituone-stepsynthesisofp-typecopperoxideforlow-temperature,solution-processedthin-filmtransistors,JournalofMaterialsChemistryC,http://dx.doi.org/10.1039/c7tc00574a
2016
5.ChundanZhu,AoLiu,GuoxiaLiu*,GuixiaJiang,YouMeng,ElviraFortunato,RodrigoMartins,FukaiShan*(Correspondence),Low-temperature,nontoxicwater-inducedhigh-kzirconiumoxidedielectricsforlow-voltage,high-perfromanceoxidethin-filmtransistors,JournalofMaterialsChemistryC,4(2016)10715-10721.
6.GuixiaJiang,AoLiu,GuoxiaLiu*,ChundanZhu,YouMeng,ByoungchulShin,Elvirafortunate,RodrigoMartins,andFukaiShan*(Correspondence),Solution-processedhigh-kmagnesiumoxidedielectricsforlow-voltageoxidethin-filmtransistors.AppliedPhysicsLetters,109(2016)183508.
7.FukaiShan#*(Correspondence),AoLiu#,HuihuiZhu,WeijinKong,JingquanLiu,ByoungchulShin,ElviraFortunato,RodrigoMartins,andGuoxiaLiu*,High-mobilityp-typeNiOxthin-filmtransistorsprocessedatlowtemperatureswithAl2O3high-kdielectric,JournalofMaterialsChemistryC,4(2016)9438-9444.
8.YuanyueLi,GuoxiaLiu,XiaoyingQin*,andFukaiShan*(Correspondence),InhibitionofminoritytransportforelevatingthethermoelectricfigureofmeritofCuO/BiSbTenanocompositesathightemperatures,RSCAdvances,6(2016)112050-112056.
9.MLorenz1,MSRamachandraRao2,TVenkatesan3,EFortunato4,PBarquinha4,RBranquinho4,DSalgueiro4,RMartins4,ECarlos4,ALiu5,FukaiShan5,MGrundmann1,HBoschker6,JMukherjee2,MPriyadarshini2,7,NDasGupta7,DJRogers8,FHTeherani8,EVSandana8,PBove8,KRietwyk9,AZaban9,AVeziridis10,AWeidenkaff10,MMuralidhar11,MMurakami11,SAbel12,JFompeyrine12,JZuniga-Perez13,RRamesh14,NASpaldin15,SOstanin16,VBorisov16,IMertig16,VLazenka17,GSrinivasan18,WPrellier19,MUchida20,MKawasaki20,RPentcheva21,PGegenwart22,FMilettoGranozio23,JFontcuberta24andNPryds25,The2016oxideelectronicmaterialsandoxideinterfacesroadmap.JournalofPhysicsD:AppliedPhysics,49(2016)433001(1-43).
10.AoLiu,GuoxiaLiu*,ChundanZhu,HuihuiZhu,Elvirafortunate,RodrigoMartins,andFukaiShan*(Correspondence),Solution-processedalkalinelithiumoxidedielectricsforapplicationsinn-andp-typethin-filmtransistors,AdvancedElectronicMaterials,2(2016)1600140.
11.AoLiu,G.X.Liu*,H.H.Zhu,B.C.Shin,E.Fortunato,R.Martins,FukaiShan*(Correspondence),Holemobilitymodulationofsolution-processednickeloxidethin-filmtransistorbasedonhigh-kdielectric,AppliedPhysicsLetters,108(2016)233506
12.AoLiu,GuoxiaLiu,HuihuiZhu,ByoungchulShin,ElviraFortunato,RodrigoMartins,FukaiShan*(Correspondence),Eco-friendly,solution-processedIn-W-Othinfilmsandtheirapplicationsinlow-voltage,high-performancetransistors,JournalofMaterialsChemistryC,4(2016)4478-4484.
13.FengyunWang*,HongchaoZhang,LeiLiu,ByoungchulShin,andFukaiShan*Correspondence),AgV7O18:anewsilvervanadatesemiconductorwithphotodegradationabilityondyesundervisible-lightirradiation,MaterialsLetters,169(2016)82-85.
14.FengyunWang*,HongchaoZhang,LeiLiu,ByoungchulShin,andFukaiShanCorrespondence),Synthesis,surfacepropertiesandopticalcharacteristicsofCuV2O6nanofibers,JournalofAlloysandCompounds,672(2016)229-237.
15.HuihuiZhu,AoLiu,Fukai.Shan*(Correspondence),WenrongYang,WenlingZhang,DaLi,JingquanLiu*,One-stepsynthesisofgraphenequantumdotsfromdefectiveCVDgrapheneandtheirapplicationinIGZOUVthinfilmphototransistor,Carbon,100(2016)201-207.
2015
16.AoLiu,G.X.Liu,H.H.Zhu,B.C.Shin,E.Fortunato,R.Martins,FukaiShan*(Correspondence),Eco-friendlywater-inducedaluminumoxidedielectricsandtheirapplicationsinhybridmetaloxide/polymerTFT,RSCAdvances,5(2015)86606-86613.
17.AoLiu,GuoxiaLiu,HuihuiZhu,HuijunSong,ByoungchulShin,ElviraFortunato,RodrigoMartins,FukaiShan*(Correspondence),Water-inducedscandiumoxidedielectricforlow-operatingvoltagen-andp-typemetal-oxidethin-filmtransistors,AdvancedFunctionalMaterials,25(2015)7180-7188.
18.JianminYu,GuoxiaLiu,AoLiu,YouMeng,ByoungchulShin,FukaiShan*(Correspondence),Solution-processedp-typecopperoxidethin-filmtransistorsfabricatedbyusingaone-stepvacuumannealingtechnique,JournalofMaterialsChemistryC,3(2015)9509-9513.
19.AoLiu,GuoxiaLiu,HuihuiZhu,YouMeng,HuijunSong,ByoungchulShin,ElviraFortunato,RodrigoMartins,FukaiShan*(Correspondence),Awater-inducedhigh-kyttriumoxidedielectricforfully-solution-processedoxidethin-filmtransistors,CurrentAppliedPhysics,15(2015)S75-S81.
20.GuoxiaLiu,AoLiu,HuihuiZhu,ByoungchulShin,ElviraFortunato,RodrigoMartins,YiqianWang,FukaiShan*(Correspondence),Low-temperature,nontoxicwater-inducedmetal-oxidethinfilmsandtheirapplicationinthin-filmtransistors,AdvancedFunctionalMaterials,25(2015)2564-2572.
21.YouMeng,GuoxiaLiu,AoLiu,HuijunSong,YangHou,Byoungchul,FukaiShan*(Correspondence),Low-temperaturefabricationofhighperformanceindiumoxidethinfilmtransistors,RSCAdvances,5(2015)37807-37813.
22.FengZhang,GuoxiaLiu,AoLiu,ByoungchulShin,FukaiShan*(Correspondence),Solution-processedhafniumoxidedielectricthinfilmsforthin-filmtransistorsapplications,CeramicsInternational,41(2015)13218-13223.
23.FukaiShan*(Correspondence),AoLiu,GuoXiaLiu,YouMeng,ElviraFortunato,RodrigoMartins,Low-voltagehigh-stabilityInZnOthin-filmtransistorusingultra-thinsolution-processedZrOxdielectric,JournalofDisplayTechnology,11(2015)541-546.
24.HuiyueTan,GuoxiaLiu,AoLiu,Byoungchul,FukaiShan*(Correspondence),Theannealingeffectsonthepropertiesofsolution-processedaluminathinfilmanditsapplicationinTFTs,CeramicsInternational,6(2015)S349-S355.
25.FengXu,AoLiu,GuoXiaLiu,ByoungchulShin,andFukaiShan*(Correspondence),Solution-processedyttriumoxidedielectricforhigh-performanceIZOthin-filmtransistors,CeramicsInternational,41(2015)S337-S343.
26.G.X.Liu*,A.Liu,Y.Meng,FukaiShan*(Correspondence),B.C.Shin,W.J.Lee,C.R.Cho,Annealingdependenceofsolution-processedultra-thinZrOxfilmsforgatedielectricapplications,JournalofNanoscience&Nanotechnology,15(2015)2185-2191.
2014
27.AoLiu,GuoxiaLiu,HuihuiZhu,FengXu,ElviraFortunato,RodrigoMartins,FukaiShan*(Correspondence),Fullysolution-processedlow-voltageaqueousIn2O3thin-filmtransistorsusinganultrathinZrOxdielectric,ACSAppliedMaterials&Interfaces,6(2014)17364-17369.
28.G.X.Liu*,A.Liu,FukaiShan*(Correspondence),Y.Meng,B.C.Shin,E.Fortunato,R.Martins,High-performancefullyamorphousbilayermetal-oxidethinfilmtransistorsusingultra-thinsolution-processedZrOxdielectric,AppliedPhysicsLetters,105(2014)113509-113514.
29.G.Z.Geng,G.X.Liu,FukaiShan*(Correspondence),A.Liu,Q.Zhang,W.J.Lee,B.C.Shin,H.Z.Wu,ImprovedperformanceofInGaZnOthin-filmtransistorswithTa2O5/Al2O3stackdepositedbyusingpulsedlaserdeposition,CurrentAppliedPhysics,14(2014)S2-S6.
30.AoLiu,G.X.Liu,FukaiShan*(Correspondence),H.H.Zhu,S.Xu,J.Q.Liu,B.C.Shin,W.J.Lee,Room-temperaturefabricationofultra-thinZrOxdielectricforhigh-performanceInTiZnOthin-filmTransistors,CurrentAppliedPhysics,14(2014)S39-S43.
31.AoLiu,Q.Zhang,G.X.Liu,FukaiShan*(Correspondence),J.Q.Liu,W.J.Lee,B.C.Shin,J.S.Bae,OxygenpressuredependenceofTi-dopedIn-Zn-Othinfilmtransistors,JournalofElectroceramics,33(2014)31-36.
32.Q.Zhang,G.X.Liu,FukaiShan*(Correspondence),A.Liu,W.J.Lee,B.C.Shin,ChannellayerthicknessdependenceofIn-Ti-Zn-Othinfilmtransistorsfabricatedusingpulsedlaserdeposition,JournaloftheKoreanPhysicalSociety,64(2014)1514-1518.
33.G.Z.Geng,G.X.Liu,Q.Zhang,FukaiShan*(Correspondence),W.J.Lee,B.C.Shin,C.R.Ho,LowoperatingvoltageInGaZnOthin-filmtransistorsbasedonAl2O3high-kdielectricsfabricatedusingpulsedlaserdeposition,JournaloftheKoreanPhysicalSociety,64(2014)1437-1440.