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蔡宏琨
2023-05-11 21:01
  • 蔡宏琨
  • 蔡宏琨 - 副教授-南开大学-电子信息与光学工程学院-个人资料

近期热点

资料介绍

个人简历


2004.9-2008.12 南开大学信息技术与科学学院 微电子与固体电子学专业 获博士学位; 2005. 9 -2010.12,南开大学信息学院电子系,任讲师; 2011.1--,南开大学电光学院电子系,任副教授。

研究领域


从事半导体薄膜和器件的研究,对非晶硅薄膜和微晶硅薄膜都有较深入的了解和研究,特别是对于柔性衬底硅基薄膜太阳电池具有多年的研究经验。

近期论文


1. Nan Hu, Hongkun Cai*, Xiaowan Dai, Guifeng Chen, Yong Wang, Dexian Zhang, Figure of merit for front electrodes of solar cells, Solar Energy Materials & Solar Cells, 161 (2017) 382–387. 2. Yangyang Du, Hongkun Cai*, Hongbin Wen, Yuxiang Wu, Like Huang, Jian Ni, Juan Li, Jianjun Zhang*, Novel Combination of Efficient Perovskite Solar Cells with Low Temperature Processed Compact TiO2 Layer Via Anodic Oxidation, ACS Applied Materials and Interfaces, 2016, 8 (20): 12836–12842. 3. Xiaowan Dai, Tao Chen, Hongkun Caib*, Hongbin Wen,Yun Sun, Improving Performance of Organic-Silicon Heterojunction Solar Cells Based on Textured Surface via Acid Processing, ACS Applied Materials and Interfaces 2016, 8, 14572−14577. 4. Hongbin Wen, Hongkun Cai*, Yangyang Du, Xiaowan Dai, Yun Sun, Jian Ni, Juan Li, Dexian Zhang, Jianjun Zhang, Improving the organic/Si heterojunction hybrid solar cell property by optimizing PEDOT:PSS film and with amorphous silicon as back surface field, Appl. Phys. A (2017) 123:14. 5. Yangyang Du, Hongkun Cai*, Hongbin Wen, Yuxiang Wu, Zhenglong Li, Jian Xu, Like Huang, Jian Ni, Juan Li, Jianjun Zhang, Revealing the Unfavorable Role of Superfluous CH3NH3PbI3 Grain Boundary Traps in Perovskite Solar Cells on Carriers Collection, RSC Adv., 2016, DOI:10.1039/C6RA15512J. 6. Xiaowan Dai, Hongkun Cai*, Dexian Zhang, Guifeng Chen, Yong Wang, Wei Liu, Yun Sun, Annealing induced amorphous/crystalline silicon interface passivation by hydrogen atom diffusion, Journal of Materials Science: Materials in Electronics, 2016, 27(1):705–710. 7. Yangyang Du, Hongkui Cai*, Jian Ni, Juan Li, Xiaoxiang Sun, Yuxiang Wu, Jianjun Zhang*, Air-processed, efficient CH3NH3PbI3-xClx perovskite solar cells with organic polymer PTB7 as a hole-transport layer, RSC Advances, 2015, 5: 66981–66987.

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