个人简历

闫大为，博士(后)，1981年生，山东枣庄人，电子工程系副教授，硕士生导师，美国IEEE会员。2011年毕业于南京大学电子科学与工程系获博士学位（师从杰青陆海教授），美国范德堡大学电子工程系访问学者，合作导师为国际知名学者IEEE FellowDaniel M Feelwood教授。主要研究方向为宽禁带III族氮化物半导体器件物理和工艺，目前的主要兴趣为GaN HEMTs的电学可靠性和高性能紫外探测器的研制；在国际重要学术刊物上已发表SCI论文50多篇，以第一和责任作者已发表科技论文20多篇，包括微电子器件领域顶级SCI期刊IEEE Electronic Device letters，IEEE Transactions on ElectronDevices,IEEE Photonics Technology Letters, Applied Physics Letters等，被引次数300余次，单篇最高次数81次；建设了固态器件特性测试和分析实验室，搭建了完备的半导体器件测试系统，包括变温电流-电压，电容-电压特性测试系统，低频噪音测试系统，光谱响应测试系统，电致发光测试系统，和微光成像测试系统等；多家SCI期刊评审人，包括APL, EDL,TED，JAP,ScientificReports和ACS Applied interface and materials等；主持的纵向课题包括：江苏省自然科学基金项目，中国博士后一等资助项目，中央高校基础科研重点项目和国家自然科学基金青年项目。

研究领域

GaN HEMTs的电学可靠性和高性能紫外探测器的研制

近期论文

[1]. Linna Zhao, Dawei Yan*, Zihui Zhang, Bin Hua, Guofeng Yang, Yanrong Cao, Enxia Zhang, Daniel M Fleetwood,Temperature-Dependent Efficiency Droop in GaN-Based Blue LEDs, IEEE Electron Device Letters,39(4), 528-531,2018.
[2]. Linna Zhao, Leilei Chen, Dawei Yan*, Guofeng Yang, Xiaofeng Gu, Bin Liu, and Hai Lu, Tunneling-hopping transport model for reverse leakage current in InGaN/GaN blue light-emitting diodes, IEEE Photonics Technology Letters, 29(17),1447-1450,2017.
[3]. Wenjie Mou, Linna Zhao, Leilei Chen, Dawei Yan*, Huarong Ma, Guofeng Yang, Feng Xie, and Xiaofeng Gu, GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates, Solid-State Electronics, 133: 78-82, 2017.
[4]. Dawei Yan,Hai Lu*, Dunjun Chen, Rong Zhang, and Youdou Zheng, Forward tunneling current in GaN-based blue light-emitting diodes, Appl. Phys. Lett.96, 083504, 2010.
[5]. Dawei Yan, Hai Lu*, Dongsheng Cao, Dunjun Chen, Rong Zhang, and Youdou Zheng, On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors, Appl. Phys. Lett.97, 153503, 2010.
[6]. Jian Ren, WenjieMou, Linna Zhao,Dawei Yan*, Zhiguo Yu, Guofeng Yang, Shaoqing Xiao, and XiaofengGu, A comprehensive study of reverse current degradation mechanisms in Au/Ni/n-GaNSchottky diodes, IEEE Transactions on Electron Devices, 2017 64(2): 407-411.
[7]. Dawei Yan, Jian Ren, Guofeng Yang, Shaoqing Xiao, XiaofengGu*, and Hai Lu*, Surface acceptor-like trap model for gate leakage current degradation in lattice-matched InAlN/GaN HEMTs, IEEE Electron Device Letters, 2015 36(12): 1281-1283.
[8]. Jian Ren, Dawei Yan*, Guofeng Yang, Fuxue Wang, Shaoqing Xiao, and XiaofengGu, Current transport mechanisms in lattice-matched InAlN/GaNSchottky diodes, Journal of Applied Physics, 117,154503,2015.
[9]. Dawei Yan, Jinping Jiao, Jian Ren, Guofeng Yang, and XiaofengGu*, Forward current transport mechanisms in Ni/Au-AlGaN/GaNSchottky diodes, Journal of Applied Physics, 114, 144511, 2013.
[10]. Dawei Yan, Hai Lu*, Dunjun Chen, Rong Zhang, and Youdou Zheng, Distribution of deep-level traps at atomic-layer-deposited Al2O3/n-GaN interface, Solid-State Electronics, 72, 56, 2012.