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万茜
2023-05-11 07:01
  • 万茜
  • 万茜 - 教授-江南大学-物联网工程学院-个人资料

近期热点

资料介绍

个人简历


教育经历:\r
2009.08 - 2013.08香港中文大学电子工程学哲学博士;\r
2008.09 - 2009.06香港科技大学电子工程学理学硕士;\r
2004.09 - 2008.06南京大学电子信息科学与技术理学学士。\r
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工作经历:\r
2013.10.07 - 2016.10.08香港中文大学电子工程学学系博士后研究员;\r
2013.09.01 - 2013.10.06香港中文大学电子工程学学系兼任助理研究员;\r
2009.06.01 - 2013.08.31香港中文大学电子工程学学系初级助理研究员。

研究领域


"""""一直从事于二维材料领域(包括graphene

近期论文


X. Wan#,K. Chen# ,Z. Chen,F. Xie, X. Zeng,W. Xie,J. Chen,J. Xu*, Electrochemical Deposition of Large-Area High-Quality MoS2on Graphene in Aqueous Solution2016(under review)\r
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Kun Chen#,Xi Wan#*,J. Xu*, EpitaxialStitching and Stacking Growth of Atomically Thin Transition-Metal Dichalcogenide (TMDCs)Heterojunctions,Adv. Funct. Mater.2016(Revised)\r
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X. Wan#, K. Chen#, W. Xie, J. Wen, H. Chen, J. B. Xu*, Quantitative Analysis of Scattering Mechanisms in Highly Crystalline CVD MoS2through a Self-Limited Growth Strategy by Interface Engineering,Small2016,12, 438-445.\r
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K. Chen#,X. Wan#, W. Xie, J. Wen, Z. Kang, X. Zeng, H. Chen, J. Xu*, Lateral Built-In Potential of Monolayer MoS2–WS2In-Plane Heterostructures by a Shortcut Growth Strategy,Adv. Mater.2015,27, 6431-6437.\r
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K. Chen#, X. Wan#, J. Wen, W. Xie, Z. Kang, X. Zeng, H. Chen, J. B. Xu*, Electronic Properties of MoS2–WS2Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy,Acs Nano2015,9, 9868-9876.\r
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X. Wan#, K. Chen#,, J. Xu*, Interface engineering for CVD graphene: current status and progress,Small2014,10, 4443-4454.\r
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X. Wan, K. Chen, J. Du, D. Q. Liu, J. Chen, X. Lai, W. G. Xie, J. B. Xu*, Enhanced Performance and Fermi-Level Estimation of Coronene-Derived Graphene Transistors on Self-Assembled Monolayer Modified Substrates in Large AreasJ. Phys. Chem. C2013,117, 4800-4807.\r
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K. Chen#,X. Wan#, D. Liu, Z. Kang, W. Xie, J. Chen, Q. Miao, J. Xu*, Quantitative determination of scattering mechanism in large-area graphene on conventional and SAM-functionalized substrates at room temperatureNanoscale2013,5, 5784-5793.\r
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K. Chen#,X. Wan#, J. B. Xu*, Controllable modulation of the electronic properties of graphene and silicene by interface engineering and pressure,J. Mater. Chem. C2013,1, 4869-4878.\r
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X. Wan#, K. Chen#, D. Q. Liu, J. Chen, Q. Miao, J. B. Xu*, High-Quality Large-Area Graphene from Dehydrogenated Polycyclic Aromatic Hydrocarbons,Chem. Mater.2012,24, 3906-3915.

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