个人简历

研究经历
本人于2013年6月在中国科学院上海微系统与信息技术研究所获得微电子与固体电子学专业博士学位，所在科室为美国科学院院士、中国分子束外延MBE研究领域创始人李爱珍老师所建立的化合物半导体实验室。博士毕业后，同年8月前往美国亚利桑那州立大学分子束外延MBE实验室开展博士后研究工作。2018年1月入选华南师范大学“青年英才”计划，于华南先进光电子研究院任职特聘副研究员。
博士期间主要取得以下研究成果：1，首次采用气态源MBE实现Ge基InAs量子点通讯波段1.31um量子点激光器室温连续激射；2，在稀Bi化合物半导体领域，首次成功外延生长GaAs基晶格匹配四元InGaPBi、InAlPBi单晶薄膜材料；3，成功制备室温连续激射GaSb基InGaAsSb量子阱2.0-2.7微米室温连续激射激光器，并利用五元InAlGaAsSb势垒实现InGaAsSb量子阱结构室温3.5微米以上发光，为国内领先水平。关于气态源MBE制备Ge基InAs量子点激光器的工作成为2015年第17届InternationalConferenceonTransparentOpticalNetworks邀请报告。
博士后工作期间牵头负责世界首台III-V/II-VI集成于同一生长室的MBE设备搭建，并成功使其在项目执行期内实现高质量III-V/II-VI异质结构的外延生长以及与UCSD合作完成美国国防高级研究计划局的高灵敏度量子光电探测器项目
专利申请
1.王朋龚谦曹春芳丁彤彤“一种硅基砷化镓复合衬底的制备方法”CN105826169A,08/03/2016.
2.龚谦王朋曹春芳丁彤彤“GaAs分子束外延生长过程中As原子最高结合律的测量方法”CN105632965A,06/01/2016.
3.王庶民潘文武李耀耀王朋王凯吴晓燕崔健“一种半导体材料、半导体薄膜及其制备方法”CN104810454A,07/29/2015.

近期论文

1.MaxwellB.Lassise,PengWang,BrianD.Tracy,GuopengChen,DavidJ.Smith,Yong-HangZhang,GrowthofII-VI/III-Vheterovalentquantumstructures.JournalofVacuumScience&TechnologyB.2018,36:02D110.
2.PengWang,WenwuPan,XiaoyanWu,JuanjuanLiu,ChunfangCao,ShuminWang,andQianGong,InfluenceofGaAsBimatrixonopticalandstructuralpropertiesofInAsquantumdots.NanoscaleResearchLetters.2016,11:280.
3.PengWang,WenwuPan,ChunfangCao,XiaoyanWu,QianGongandShuminWang,InfluenceofdopinginInPbufferonphotoluminescencebehaviorofInPBi.JapaneseJournalofAppliedPhysics.2016,55:115503.
4.PengWang,QimiaoChen,XiaoyanWu,ChunfangCao,ShuminWang,QianGong,DetailedstudyoftheinfluenceofInGaAsmatrixonthestrainreductionintheInAsdot-in-wellstructure.NanoscaleResearchLetters.2016,11:119.
5.PengWang,WenwuPan,Xiaoyan,ShuminWang,QianGong,HerteroepitaxygrowthofGaAsBionGe(100)substratebygassourcemolecularbeamepitaxy.AppliedPhysicsExpress.2016,9:045502.
6.PengWang,WenwuPan,KaiWang,XiaoyanWu,LiYue,QianGongandShuminWang,InvestigationtothedeepcenterrelatedpropertiesoflowtemperaturegrownInPBiwithHallandphotoluminescence.AIPAdvances,2015,5:127104.
7.PengWang,ChanglianJin,HuahanZhan,XiaohangChen,FuchunXu,YinghuiZhou,HuiqiongWang,JunyongKang.EffectsofdifferentsubstratesurfacemodificationsontheepitaxialZnO/Si.JournalofCrystalGrowth,2013,378:245-250.
8.PengWang,ChanglianJin,XuefengWu,HuahanZhanetal.QualityimprovementofZnOthinlayersovergrownonSi(100)substratesatroomtemperaturebynitridationpretreatment.AIPAdvances,2012,2:022139.
9.XuYiZhao,PengWang,ChunfangCao,JinyiYan,FangxingZha,HailongWang,QianGong.AnnealingeffectoftheInAsdot-in-wellstructuregrownbyMBE.JournalofCrystalGrowth,2017,480:115-118.
10.KaiWang,PengWang,WenwuPan,XiaoyanWu,QianGongandShuminWang,GrowthofsemiconductoralloyInGaPBionInPbymolecularbeamepitaxy.Semicond.Sci.Technol.,2015,30:094006.
11.LiYue,PengWang,KaiWang,Xiaoyanwu,WenwuPan,YaoyaoLi,etal.,NovelInGaPBisinglecrystalgrownbymolecularbeamepitaxy,AppliedPhysicsExpress,2015,8:041201.
12.WenwuPan,PengWang,XiaoyanWu,KaiWang,JianCui,LiYue,etal.,GrowthandmaterialpropertiesofInPBithinfilmsusinggassourcemolecularbeamepitaxy.JournalofAlloysandCompounds,2015,656:777.
13.ChanglianJin,PengWang,HuahanZhan,OptimizationsofZnO/Si(100)withZnO/ZnMgOsuperlatticebufferlayersgrownbymolecularbeamepitaxy.AdvancedMaterialsResearch,2013,706:172-175.