研究领域
主要从事二维半导体纳米材料带隙调控及其光电性能研究，运用化学气相沉积系统（CVD）、高分辨透射电镜（HRTEM）、Raman光谱仪、荧光光谱仪（PL）、电子束曝光系统（EBL）等多种制备分析手段研究各种半导体生长规律、原子结构、光电子学性能等。
近期论文
(1) Honglai Li, Xiao Wang, Xiaoli Zhu, Xiangfeng Duan, Anlian Pan* Composition modulation in one-dimensional and two-dimensional chalcogenide semiconductor nanostructures. Chem. Soc. Rev. 2018,47, 7504-7521 (一区，IF=40.2) (2) Honglai Li, Hongjun Liu, Linwei Zhou, et al. Strain-Tuning Atomic Substitution in Two-Dimensional Atomic Crystals. ACS Nano, 2018, 12: 4853–4860（一区，IF=13.7） (3) Honglai Li, Xueping Wu, Hongjun Liu, et al. Composition-Modulated Two-Dimensional Semiconductor Lateral Heterostructures via Layer-Selected Atomic Substitution. ACS Nano, 2017, 11(1): 961–967（一区，IF=13.7） (4) Honglai Li, Qinglin Zhang, Xidong Duan, et al. Lateral growth of composition graded atomic layer MoS2(1−x)Se2x nanosheets. J. Am. Chem. Soc., 2015, 137(16): 5284–5287（一区，IF=14.36） (5) Honglai Li, Xidong Duan, Xueping Wu, et al. Growth of alloy MoS2xSe2(1−x) nanosheets with fully tunable chemical compositions and optical properties. J. Am. Chem. Soc., 2014, 136(10): 3756–3759（一区，IF=14.36） (6) Xueping Wu#, Honglai Li#, Hongjun Liu#, et al. Spatially composition-modulated two-dimensional WS2xSe2(1-x) nanosheets. Nanoscale, 2017, 9, 4707–4712（并列第一作者，一区，IF=7.37） (7) Xidong Duan, Chen Wang, Jonathan C. Shaw, Rui Cheng, Yu Chen, Honglai Li, et al. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions. Nat. Nanotechnol., 2014, 9: 1024–1030（Nature子刊，IF=38.99） (8) Xinliang Chen, Honglai Li, Zhaoyang Qi, et al. Synthesis and optoelectronic properties of quaternary GaInAsSb alloy nanosheets. Nanotechnol., 2016, 27: 505602 (9) Yaqin Zou, Honglai Li, Pinyun Ren, et al. Microphotoluminescence of individual ZnSe nanoribbons. Mater. Lett., 2014, 129: 118–121 (10) Cuihuan Ge, Honglai Li, Xiaoli Zhu*, Anlian Pan*. Band gap engineering of atomically thin two-dimensional semiconductors. Chin. Phys. B, 2017, 26(3): 034208 (11) Jianzhe Liu, Congxin Xia, Honglai Li, Anlian Pan*. High on/off ratio photosensitive field effect transistors based on few layer SnS2. Nanotechnol., 2016, 27: 34LT01 (12) Yankun Yang, Tiefeng Yang, Honglai Li, et al. High performance photodetectors based on high quality InP nanowires. Chin. Phys. B, 2016, 25(11): 118106
