段嘉楠
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简要介绍:段嘉楠,2014年于华中科技大学获光电信息工程学士学位,2019年于法国巴黎萨克雷大学获光电子物理学博士学位, 曾获2020年法国矿业电信联盟基金会(Fondation Mines-Telecom)最佳博士论文奖。2019-2020年在法国巴黎国立高等电信学院从事博士后研究工作。在Photonics Research, Nanophotonics, APL Photonics, IEEE Journal of Selected Topics in Quantum Electronics, Optics Letters, Applied Physics Letters等期刊发表论文16篇。在SPIE Photonics West, SPIE Photonics Asia, CSW-IPRM, IEEE IPC等国际学术会议发表论文28篇,做口头报告10次,谷歌学术引用200余次。招生信息:目前每年招收硕士研究生2名,欢迎有光电子,电子学,物理学等背景,有科研热情和读博意向的同学加入。提供法国巴黎萨克雷大学(Université Paris-Saclay),法国巴黎理工学院(Institut Polytechnique de Paris),美国加州大学圣芭芭拉分校(UCSB)博士联合培养机会。工作经历2020-至今,助理教授,哈尔滨工业大学(深圳)电子与信息工程学院2019-2020,博士后,法国巴黎理工学院 (Institut Polytechnique de Paris),巴黎高等电信学院 (Télécom Paris)教育经历2016-2019,博士,法国巴黎萨克雷大学 (Université Paris-Saclay),电子与光电子和微纳米技术专业2013-2016,硕士,法国巴黎萨克雷大学 (Université Paris-Saclay),电子、电气能源与自动化专业2010-2014,学士,华中科技大学,光学与电子信息学院,光电信息工程专业社团经历2019-2020, 第33届全法中国学者学生联合会,副主席2018-2019, 第11届巴黎地区公派学者学生联谊会,理事长学术活动IEEE Journal of Selected Topics in Quantum Electronics, APL Photonics, Journal of Lightwave Technology, Optics Communication等期刊审稿人。个人荣誉1. 2020年法国矿业与电信联盟基金会最佳博士论文奖。2. 2019年驻法大使馆“杰出志愿者”称号。3. 2016-2019年法国高等教育署博士奖学金。4. 2016-2019年国家留学基金委公派奖学金。研究领域
1. 超窄线宽半导体激光器2. 量子点激光器光学反馈特性3. 量子点激光器光注入锁定和四波混频效应4. 量子点锁模激光器,量子点频率梳激光器非线性特性""近期论文
2020[16] Y. Zhou, J. Duan, F. Grillot, and C. Wang, “Optical noise of two-state lasing quantum dot lasers,” IEEE Journal of Quantum Electronics, Vol. 56(6), (2020). (JCR Q2 IF:2.384)[15] J. Duan, Y. Zhou, B. Dong, H. Huang, J. Norman, D. Jung, Z. Zhang, C. Wang, J. Bowers and F. Grillot, “Effect of the p-doping on the intensity noise of epitaxial quantum dot lasers on silicon,” Optics Letters, Vol. 45, No. 18 (2020). (JCR Q1 IF:3.714)[14] B. Dong, X. Labriolle, S. Liu, M. Dumont, H. Huang, J. Duan, J. Norman, J. Bowers, and F. Grillot, “1.3 μm passively mode-locked quantum dot lasers epitaxially grown on silicon: material properties and optical feedback stabilization,” Journal of Physics: Photonics, 2, 045006, (2020).[13] F. Grillot, J. Norman, J. Duan, Z. Zhang, B. Dong, H. Huang, W. Chow and J. Bowers, “Physics and applications of quantum dot lasers for silicon photonics,” Nanophotonics, 20190570, (2020). (JCR Q1 IF:7.491, Invited review)[12] F. Koster, J. Duan, B. Dong, H. Huang, F. Grillot and K. Lüdge, “Temperature dependent linewidth rebroadening in quantum dot semiconductor lasers,” Journal of Physics D: Applied Physics, Vol. 53, No. 23, (2020). (JCR Q1 IF:3.169)[11] S. Gomez, H. Huang, J. Duan, S. Combrié, G. Baili, A. de Rossi, F. Grillot, “High coherence collapse of a hybrid III-V/Si semiconductor laser with a large quality factor”, Journal of Physics: Photonics, 2, 025005 (2020).[10] H. Huang, J. Duan, B. Dong, J. Norman, D. Jung, J.E.Bowers and F. Grillot, “Epitaxial quantum dot lasers on silicon: systematic investigation of the optical feedback sensitivity with different temperature and doping profiles,” APL Photonics, 5, 016103, (2020). (JCR Q1 IF:4.864)2019[9] B. Dong, H. Huang, J. Duan, G. Kurczveil, D. Liang, R. G. Beausoleil, and F. Grillot, “Frequency comb dynamics of a 1.3-μm hybrid-silicon quantum dot semiconductor laser with optical injection,” Optics Letters, Vol.44, Iss.23, pp. 5755-5758, (2019) (JCR Q1 IF:3.714)[8] B. Dong, J. Duan, C. Shang, H. Huang, A. B. Sawadogo, D. Jung, Y. Wan, J. E. Bowers and F. Grillot, “Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55 μm InP-based InAs quantum dash lasers,” Applied Physics Letters, 115, 091101, (2019). (JCR Q1 IF:3.597)[7] J. Duan, H. Huang, B. Dong, J. C. Norman, Z. Zhang, J. E. Bowers and F. Grillot, “Dynamic and nonlinear properties of epitaxial quantum dot lasers on silicon for isolator-free integration,” Photonics Research, Vol. 7, No.11, (2019). (JCR Q1 IF:6.099)[6] Y. Zhou, J. Duan, H. Huang, X. Y. Zhao, C. F. Cao, Q. Gong, F. Grillot and C. Wang, “Intensity Noise and Pulse Oscillations of an InAs/GaAs Quantum Dot Laser on Germanium,” IEEE Journal of Selected Topics in Quantum Electronics, Vol. 25, No. 6, (2019). (JCR Q1 IF:4.917)[5] J. Duan, H. Huang, B. Dong, D. Jung, J. C. Norman, J. E. Bowers and F. Grillot, “1.3-μm Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon,” IEEE Photonics Technology Letters, Vol. 31, No. 5, (2019). (JCR Q2 IF:2.451)2018[4] J. Duan, X. G. Wang, Y. G. Zhou, C. Wang and F. Grillot, “Carrier-Noise Enhanced Relative Intensity Noise of Quantum Dot Lasers,” IEEE Journal of Quantum Electronics, Vol. 54(6), (2018). (JCR Q2 IF:2.384)[3] H. Huang, J. Duan, D. Jung, A. Y. Liu, Z. Zhang, J. Norman, J. E. Bowers and F. Grillot, “Analysis of the optical feedback dynamics in InAs/GaAs quantum dots lasers directly grown on silicon,” Journal of the Optical Society of America B, Vol. 35, No. 11, (2018). (JCR Q2 IF:2.180)[2] J. Duan, H. Huang, D. Jung, Z. Zhang, J. Norman, J. E. Bowers and F. Grillot, “Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor,” Applied Physics Letters, 112, 251111 (2018). (Top Articles in Photonics and Optoelectronics) (JCR Q1 IF:3.597)[1] J. Duan, H. Huang, Z. G. Lu, P. Poole, C. Wang and F. Grillot, “Narrow spectral linewidth in InAs/InP quantum dot distributed feedback lasers,” Applied Physics Letters, 112, 121102 (2018). (JCR Q1 IF:3.597)会议期刊列表2021[28] F. Grillot, J. Duan, S. Zhao, B. Dong, H. Huang, J. Norman, and J. Bowers, \标签: 电子与信息工程学院 哈尔滨工业大学(深圳)
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