个人简历

教育经历
2013/10-2014/01，日本东京大学，物性研究所，访问学习；
2010/09-2015/06，厦门大学，微电子学与固体电子学，工学博士；
2006/09-2010/06，扬州大学，物理学，理学学士。

工作经历
2020/4-至今，华东师范大学，电子工程系，副教授；
2017/12-2020/3，华东师范大学，电子工程系，专任副研究员；
2015/9-2017/11，华东师范大学，电子工程系，博士后。
个人简介
Guoen Weng was born in Fujian Province, China, in 1988. He received the B.S. degree in physics in 2010 from Yangzhou University, Yangzhou, China, and the Ph.D. degree in microelectronics and solid electronics in 2015 from Xiamen University, Xiamen, China. He is now an Associate Professor at East China Normal University, Shanghai, China. His current research interests include III-nitride semiconductor lasers, vertical-cavity surface-emitting lasers, and lead halide-based perovskite materials and optoelectronic devices.

开授课程
1. 固态器件物理学(上)—固体物理 （本科）
2. LED技术与应用 （本科）
3. 微电子学与固体电子学研究方法 （研究生）
承担项目
1. 国家自然科学基金(青年项目), 61704055, 氮化物增益开关超短脉冲垂直腔面发射激光器研究, 2018/01-2020/12。
2. “幸福之花”先导研究基金项目(智能+)子课题——激光雷达用超快半导体激光芯片设计及工艺开发，2020/01-2022/12。
专利
[1]一种多波长GaN基垂直腔面发射激光器的有源区结构设计，翁国恩，陈少强，胡小波，梅洋，发明授权，专利号: 201710891721.X
[2]一种基于聚合物微球制备纳米级图形化蓝宝石衬底的方法，翁国恩，陈少强，胡小波，涂亮亮，魏明德，发明授权，专利号: ZL201710024540.7
[3]一种纳米级图形化蓝宝石衬底及其制备方法和应用，翁国恩，陈少强，胡小波，涂亮亮，魏明德，发明授权，专利号: ZL201610651489.8
[4]一种基于纳米压印技术制备图形化蓝宝石衬底的方法，陈少强，翁国恩，胡小波，涂亮亮，魏明德，发明授权，专利号: ZL201610051094.4
[5]一种氮化镓基谐振腔气体传感器的制备方法, 张保平(导师), 翁国恩, 梅洋, 张江勇, 应磊莹, 发明授权, 专利号: ZL201510094227.1
[6]一种多结太阳能电池子结之间发光耦合效率的检测装置及方法，陈少强，胡小波，翁国恩，发明授权，专利号: ZL201710148607.8
[7]双光源激发光致发光检测半导体缺陷的装置及其检测方法，胡小波，陈少强，翁国恩，发明授权，专利号: ZL201710150530.8
[8]一种基于图形化衬底的低阈值光泵浦随机激光器，翁国恩，陈少强，田姣，陈诗明，胡小波，申请号: 201910046828.3
[9]一种多波长GaN基非对称量子阱面发射激光器及其制备方法，翁国恩，陈少强，胡小波，申请号: 201710888773.1
[10]一种缩短脉冲并获得可调皮秒脉冲的方法，陈少强，陈宇豪，翁国恩，胡小波，申请号: 201910661122.8
[11]一种发光波长可调谐的GaN基垂直腔面发射光源, 张保平, 梅洋, 许荣彬, 翁国恩, 应磊莹, 郑志威, 申请号: 201711072492.5

研究领域

氮化物垂直腔面发射激光器，低维材料制备及性能测试""

近期论文

[1] Guo-En Weng, Shao-Qiang Chen, Yang Mei, Yue-Jun Liu, Hidefumi Akiyama, Xiao-Bo Hu, Jian-Ping Liu, Bao-Ping Zhang, and Jun-Hao Chu, “Multiwavelength GaN-Based Surface-Emitting Lasers and Their Design Principles”, Ann. Phys. (Berlin) 1900308 (2019). (SCI二区, Outside Front Cover, IF: 3.276)
[2] Guo-En Weng, Jiao Tian, Shi-Ming Chen, Juan-Juan Xue, Ji-Yu Yan, Xiao-Bo Hu, Shao-Qiang Chen, Zi-Qiang Zhu, and Jun-Hao Chu, “Giant reduction of the random lasing threshold in CH3NH3PbBr3 perovskite thin films by using a patterned sapphire substrate”, Nanoscale 11, 10636–10645 (2019). (SCI一区, Outside Front Cover, IF: 6.97)
[3] Guo-En Weng, Juan-Juan Xue, Jiao Tian, Xiao-Bo Hu, He-Chun Lin, Shao-Qiang Chen, Zi-Qiang Zhu, and Jun-Hao Chu, “Picosecond Random Lasing Based on Three-Photon Absorption in Organometallic Halide CH3NH3PbBr3 Perovskite Thin Films”, ACS Photonics 5, 2951–2959 (2018). (SCI一区, IF: 7.143)
[4] Guo-En Weng, Shao-Qiang Chen, Bao-Ping Zhang, Xiao-Bo Hu, Shigeyuki Kuboya, and Kentaro Onabe, “Dynamics of carrier tunneling and recombination in asymmetric coupled InGaN multiple quantum wells”, Optics Express25(20), 24745–24755 (2017). (SCI二区, Editor’s Pick, IF: 3.561)
[5] Yang Mei*, Guo-En Weng* (co-first), Bao-Ping Zhang, Jian-Ping Liu, Werner Hofmann, Lei-Ying Ying, Jiang-Yong Zhang, Zeng-Cheng Li, Hui Yang, and Hao-Chung Kuo, “Quantum dot vertical-cavity surface-emitting lasers covering the ‘green gap’”, Light: Science & Applications 6, e16199 (2017). (SCI一区, IF: 14)
[6] Guo-En Weng, Shao-Qiang Chen, Takashi Ito, Hidefumi Akiyama, Xiao-Bo Hu, and Bao-Ping Zhang, “Emission characteristics of high-gain GaN-based Vertical-Cavity Surface-Emitting Lasers”, 33rd International Conference on the Physics of Semiconductors, IOP Conf. Series: Journal of Physics: Conf. Series 864, 012083 (2017). (EI论文)
[7] Guo-En Weng, Yang Mei, Jian-Ping Liu, Werner Hofmann, Lei-Ying Ying, Jiang-Yong Zhang, Yi-Kun Bu, Zeng-Cheng Li, Hui Yang, and Bao-Ping Zhang, “Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers”, Optics Express 24(14), 15546–15553 (2016).(SCI二区, IF: 3.561)
[8]Guo-En Weng, Wan-Ru Zhao, Shao-Qiang Chen, Hidefumi Akiyama, Zeng-Cheng Li, Jian-Ping Liu and Bao-Ping Zhang, “Stronglocalizationeffect and carrier relaxationdynamics in self-assembled InGaN quantum dotsemitting in the green”, Nanoscale Research Letters10: 31, (2015).(SCI二区, IF: 3.159)
[9] Guo-En Weng, Bao-Ping Zhang, Ming-Ming Liang, Xue-Qin Lv, Jiang-Yong Zhang, Lei-Ying Ying, Zhi-Ren Qiu, H. Yaguchi, S. Kuboya, K. Onabe, Shao-Qiang Chen, and H. Akiyama, “Opticalpropertiesandcarrierdynamicsinasymmetric coupled InGaN multiplequantumwells”, Functional Materials Letters6(2), 1350021 (2013).(SCI四区, IF: 1.388)
[10] Guo-En Weng,An-Kai Ling, Xue-Qin Lv, Jiang-Yong Zhang,andBao-Ping Zhang, “III-Nitride-based quantum dots and their optoelectronic applications”, Nano-Micro Letters3(3), 200–207(2011). (SCI一区, IF: 9.043)
[11] Jiao Tian, Guo-En Weng,You-Yang Wang, Xiao-Bo Hu, Shao-Qiang Chen, and Jun-Hao Chu, “Random lasing in ZnO Nanopowders Based on Multiphoton Absorption for Ultrafast Upconversion Application”, ACSApplied Nano Materials 2, 1909–1919 (2019).
[12] Juan-Juan Xue, Xiao-Bo Hu, Yi-Xin Guo, Guo-En Weng, Jin-Chun Jiang, Shao-Qiang Chen, Zi-Qiang Zhu, Jun-Hao Chu, and Hidefumi Akiyama, “Diagnosis of Perovskite Solar Cells Through Absolute Electroluminescence-Efficiency Measurements”, Frontiers in Physics 7: 166 (2019).
[13] Xiao-Bo Hu, Jia-Hua Tao, You-Yang Wang, Juan-Juan Xue, Guo-En Weng, Chuan-Jun Zhang, Shao-Qiang Chen, Zi-Qiang Zhu, and Jun-Hao Chu, “5.91%-efficient Sb2Se3 solar cells with a radio-frequency magnetron-sputtered CdS buffer layer”, Applied Materials Today 16, 367–374 (2019).
[14] Jia-Hua Tao, Xiao-Bo Hu, Juan-Juan Xue, You-Yang Wang, Guo-En Weng, Shao-Qiang Chen, Zi-Qiang, and Jun-Hao Chu, “Investigation of electronic transport mechanism in Sb2Se3 thin-film solar cells”, Solar Energy Materials and Solar Cells 197, 1–6 (2019).
[15] Xiao-Bo Hu, Teng-Fei Chen, Jian-Yu Hong, Shao-Qiang Chen, Guo-En Weng, Zi-Qiang Zhu, Jun-Hao Chu, “Diagnosis of GaAs solar-cell resistance via absolute electroluminescence imaging and distributed circuit modeling”, Energy 174, 85–90 (2019).
[16] Shi-Ming Chen, Xiao-Bo Hu, Jia-Hua Tao, Juan-Juan Xue, Guo-En Weng, Jin-Chun Jiang, Xiu-Xu Shen, and Shao-Qiang Chen, “Effects of substrate temperature on material and photovoltaic properties of magnetron-sputtered Sb2Se3 thin films”, Applied Optics 58(11), 2823–2827 (2019).
[17] Ting-Ting Chen, Ke Li, Hui-Bing Mao, Ye Chen, Ji-Qing Wang, and Guo-En Weng, “Photoluminescence Investigation of the InP/ZnS Quantum Dots and Their Coupling with the Au Nanorods”, Journal of Electronic Materials 48, 3497–3503 (2019).
[18] Xiao-Bo Hu, Jia-Hua Tao, Guo-En Weng, Jin-Chun Jiang, Shao-Qiang Chen, Zi-Qiang Zhu, and Jun-Hao Chu, “Investigation of electrically-active defects in Sb2Se3 thin-film solar cells with up to 5.91% efficiency via admittance spectroscopy”, Solar Energy Materials and Solar Cells 186, 324–329 (2018).
[19] Xu-Min Bao, Yue-Jun Liu, Guo-En Weng, Xiao-Bo Hu, and Shao-Qiang Chen, “ABC-model analysis of gain-switched pulse characteristics in low-dimensional semiconductor lasers”, Quantum Electronics 48(1), 7–12 (2018).
[20] Xiao-Bo Hu, Jia-Hua Tao, Shi-Ming Chen, Juan-Juan Xue, Guo-En Weng, Kai Jiang, Zhi-Gao Hu, Jin-Chun Jiang, Shao-Qiang Chen, Zi-Qiang Zhu, and Jun-Hao Chu, “Improving the efficiency of Sb2Se3 thin-film solar cells by post annealing treatment in vacuum dondition”, Solar Energy Materials and Solar Cells 187, 170–175 (2018).
[21] Yang Mei, Rong-Bin Xu, Guo-En Weng, Huan Xu, Lei-Ying Ying, Zhi-Wei Zheng, Hao Long, Bao-Ping Zhang, Werner Hofmann, Jian-Ping Liu, Jian Zhang (Jr.), Mo Li, and Jian Zhang (Sr.), “Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet”, Applied Physics Letters 111(12), 121107 (2017).
[22] Xiao-Bo Hu*, Liang-Qing Zhu*, Guo-En Weng, and Shao-Qiang Chen, “Accessing externally induced spatially-resolved strain in GaAs thin-film solar cells by electroluminescence imaging”, Solar Energy Materials and Solar Cells (2017).
[23]Xiao-Bo Hu, Guo-En Weng, Shao-Qiang Chen, and K. Akimoto, “Investigation of Deep-level Defects in CuGaSe2 Thin-film Solar Cells by Transient Photo-capacitance Spectroscopy”, 33rd International Conference on the Physics of Semiconductors, IOP Conf. Series: Journal of Physics: Conf. Series 864, 012077 (2017).
[24] Xiao-Bo Hu, Teng-Fei Chen, Juan-Juan Xue, Guo-En Weng, Shao-Qiang Chen, Hidefumi Akiyama, and Zi-Qiang Zhu, “Absolute electroluminescence imaging diagnosis of GaAs thin-film solar cells”, IEEE Photonics Journal9, 1–6 (2017).
[25] Xiao-Bo Hu, Juan-Juan Xue, Jiao Tian, Guo-En Weng, and Shao-Qiang Chen, “Effect of Cu/Ga ratio on deep-level defects in CuGaSe2 thin films studied by photocapacitance measurements with two-wavelength excitation”, Applied Optics 56(14), 4090–4094 (2017).
[26] Xiao-Bo Hu, Juan-Juan Xue, Jiao Tian, Guo-En Weng, and Shao-Qiang Chen, “Investigation of deep-level defects in CuGaSe2 thin-film solar cells using photocapacitance methods”, Applied Optics 56(8), 2330–2335 (2017).
[27] Shao-Qiang Chen, Takahiro Nakamura, Takashi Ito, Xu-Min Bao, Hidekazu Nakamae, Guo-En Weng, Xiao-Bo Hu, Masahiro Yoshita, Hidefumi Akiyama, Jian-Ping Liu, Masao Ikeda, and Hui Yang, “Picosecond tunable gain-switched blue pulses from GaN laser diodes with nanosecond current injections”, Optics Express 25(12), 13046–13054 (2017).
[28] Tian-Tian Wang, Hong-Mei Deng, Hui-Yi Cao, Wen-Liang Zhou, Guo-En Weng, Shao-Qiang Chen, Ping-Xiong Yang, and Jun-Hao Chu, “Structural, optical and magnetic modulation in Mn and Mg co-doped BiFeO3 films grown on Si substrates”, Materials Letters 199, 116–119 (2017).
[29] Xiao-Bo Hu, Juan-Juan Xue, Jiao Tian, Guo-En Weng, and Shao-Qiang Chen, “Influence of Se beam pressure on deep-level defects in Cu(In,Ga)Se2 thin films studied by photocapacitance and time-resolved photoluminescence measurements”, Applied Optics 56(5), 1291–1295 (2017).
[30] Shao-Qiang Chen, Sheng-Xi Diao, Peng-Tao Li, Takahiro Nakamura, Masahiro Yoshita, Guo-En Weng, Xiao-Bo Hu, Yan-Ling Shi, Yi-Qing Liu, and Hidefumi Akiyama, “Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers”, Scientific Reports 7: 6878 (2017).
[31] Ben-Long Guo, Hong-Mei Deng, Xue-Zhen Zhai, Wen-Liang Zhou, Xian-Kuan Meng, Guo-En Weng, Shao-Qiang Chen, Ping-Xiong Yang, and Jun-Hao Chu, “Cr doping-induced structral phase transition, optical tuning and magnetic enhancement in BiFeO3 thin films”, Materials Letters 186, 198–201 (2017).
[32]Wan-Ru Zhao, Guo-En Weng, Jian-Yu Wang, Jiang-Yong Zhang, Hong-Wei Liang, Takashi Sekiguchi, and Bao-Ping Zhang, “Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells”, Nanoscale Research Letters 10: 459, (2015).
[33] Yong-Ping Zeng, Wen-Jie Liu, Guo-En Weng, Wan-Ru Zhao, Hai-Jie Zuo, Jian Yu, Jiang-Yong Zhang, Lei-Ying Ying, and Bao-Ping Zhang, “Effect of In Diffusion on the Property of Blue Light-Emitting Diodes”, Chinese Physics Letters 32, 064207 (2015).
[34]Wan-Ru Zhao,Guo-En Weng,Ming-Ming Liang,Zeng-Cheng Li,Jian-Ping Liu,Jiang-Yong Zhang,andBao-Ping Zhang, “Temperature Dependence of Emission Properties of Self-Assembled InGaNQuantum Dots”, Chinese Physics Letters31(11), 114205 (2014).
[35] Li Sun, Guo-En Weng, Ming-Ming Liang, Lei-Ying Ying, Xue-Qin Lv, Jiang-Yong Zhang, and Bao-Ping Zhang, “Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs”, Physica E60, 166–169 (2014).
[36] Ming-Ming Liang,Guo-En Weng,Jiang-Yong Zhang, Xiao-MeiCai,Xue-Qin Lv,Lei-Ying Ying, andBao-Ping Zhang,“Influence of barrier thickness on the structural and optical propertiesof InGaN/GaN multiple quantum wells”, Chinese Physics B 23(5), 054211 (2014).
[37] 孙丽，张江勇，陈明，梁明明，翁国恩，张保平，“p-GaN 退火对InGaN 量子阱光学性能的影响”,Semiconductor Technology 38(1), 35–39 (2013).
[38] Xiao-Long Hu, Wen-Jie Liu, Guo-En Weng, Jiang-Yong Zhang, Xue-Qin Lv, Ming-Ming Liang,Ming Chen, Hui-Jun Huang, Lei-Ying Ying, and Bao-Ping Zhang,“Fabrication and Characterization of High-QualityFactorGaN-Based Resonant-Cavity BlueLight-Emitting Diodes”, IEEE Photonics Technology Letters 24(17), 1472–1474 (2012).
[39] Wen-Jie Liu, Xiao-Long Hu, Jiang-Yong Zhang, Guo-En Weng, Xue-Qin Lv, Hui-Jun Huang,Ming Chen, Xiao-Mei Cai, Lei-Ying Ying, and Bao-Ping Zhang, “Low-temperature bonding technique for fabrication ofhigh-power GaN-based blue vertical light-emitting diodes”, Optical Materials 34, 1327–1329 (2012).
[40] Shuo Lin, Bao-Ping Zhang, Shen-Wei Zeng, Xiao-Mei Cai, Jiang-Yong Zhang, S.Wu, An-Kai Ling, and Guo-En Weng, “Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells”, Solid-State Electronics 63, 105–109 (2011).