个人简历
教育经历2015年7月获得清华大学微电子学与固体电子学博士学位；2010年7月本科毕业于吉林大学电子科学与技术专业;工作经历2019年1月~ 至今 华东师范大学 副教授;2016年4月~2018年12月 华东师范大学 讲师;开授课程本科生：《半导体器件原理及仿真设计》《集成电路工艺原理》研究生：《现代半导体器件物理》科研项目1. 国家自然科学基金青年基金(61704056)：具备波动性表征的10nm及以下FinFET精准射频模型研究，2018/01~2020/12，主持2. 上海市科委杨帆计划项目(17YF1404700)：基于三维全波电磁场分析的FinFET微波小信号模型及波动性研究，2017/05~ 2020/05; 主持3. 国家科技重大专项 (2016ZX02301003): 22nm FD-SOI MOSFET栅围寄生效应及建模, 项目参与人瞄准我国集成电路发展的战略需求，近年来一直专注于深纳米工艺VLSI核心器件及模型的研究，与上海集成电路研发中心、华力微电子、华为海思等保持着长期密切的合作。聚焦于后摩尔时代3-5nm技术节点VISL核心器件，深入开展GAA- FET、NCFET、CFET以及RFET机理、模型及工艺涨落特性研究。以第一作者/通讯作者在IEEE Transactions on Electron Devices、IEEE Transactions on Microwave theory and Techniques、IEEE Transactions on Device and Materials Reliability、IEEE Access等期刊上发表SCI论文47篇。代表性专利：1.孙亚宾, 李小进, 石艳玲等；一种改善 SOI 工艺中混合结构边缘凸起的方法，20180724，申请号: 201810818673.62.孙亚宾, 李小进, 石艳玲等；一种非对称型结构的可重构场效应晶体管，20180724，申请号: 201810818638.43.孙亚宾, 李小进, 石艳玲等；一种非对称型的可重构场效应晶体管(RFET)， 20190425，申请号：201910337000.34.孙亚宾, 李小进, 石艳玲等；一种具有双层侧墙结构的纳米片环栅场效应晶体管，20190605，申请号：201910486506.05.孙亚宾, 李小进, 石艳玲等；一种源漏抬升 FDS0I 器件的栅围寄生互连电容提取方法，20190425，申请号: 201910675037.76.孙亚宾, 李小进, 石艳玲等；一种非对称沟道介质环场效应晶体管，20190715，申请号: 201910634807.37.孙亚宾, 李小进, 石艳玲等；一种非对称边墙、垂直堆叠沟道结构的可重构场效应晶体管，20190726，申请号: 201910683374.08.孙亚宾, 李小进, 石艳玲等；超大规模集成电路工艺的后道互连寄生电容电阻的建模方法，20191031，申请号: 201910911923.59.孙亚宾, 李小进, 石艳玲等；一种铁电材料可重构场效应晶体管，20191015，申请号: 201910978165.910.孙亚宾, 李小进, 石艳玲等；一种自实现反相器功能的互补式垂直环栅场效应晶体管，20191018，申请号: 201910993319.111.孙亚宾, 李小进, 石艳玲等；一种非对称侧墙结构的纳米片环栅场效应晶体管，申请号: 201911034668.712.孙亚宾, 李小进, 石艳玲等；一种非对称栅氧结构的纳米片环栅场效应晶体管，申请号: 201910880148.113.孙亚宾, 李小进, 石艳玲等；一种静态随机存取存储器；2019.11.26，申请号: 201911170922.614.孙亚宾, 李小进, 石艳玲等；一种源漏外延场效应晶体管栅围电容的建模方法，已经上报，15.孙亚宾, 李小进, 石艳玲等；一种双金属功函数栅的可重构场效应晶体管，已经上报荣誉及奖励2017年入选上海市扬帆人才计划;
研究领域
深纳米工艺半导体器件及模型""
近期论文
(48) Xianglong Li, Yabin Sun*, Xiaojin Li, Yanling Shi, Ziyu Liu*, Jun Xu, Analysis of Metal Work-Function Modulation Effect in Reconfigurable Field Effect Transistor, Accepted by IEEE Transactions on Electron Devices, 2020(XXX), XX-XX(47) Ziyu Liu, Yabin Sun*, Xiaojin Li, Yanling Shi, Characterization and Modeling Degradation of Current Gain in Bipolar Transistor Exposed to Heavy Ion Radiation, Accepted by Materials Science in Semiconductor Processing, 2020(XXX), XX-XX(46) Renhua Liu, Xiaojin Li, Yabin Sun, Yanling Shi, A Vertical Combo Spacer to Optimize Electrothermal Characteristics of 7-nm Nanosheet Gate-All-Around Transistor, IEEE Transactions on Electron Devices, 2020,67(6), 2249-2254 (45) Renhua Liu, Yabin Sun, Qin Huang, Xiaojin Li, Yanling Shi et.al, Simulation of location and size effects on performance adjustment in hybrid N-type MOSFETs, Materials Science in Semiconductor Processing, 2020, vol.111, 104971(44) Xianglong Li, Yabin Sun, Xiaojin Li, Yanling Shiet.al, Electronic Assessment of Novel Arch-shaped Asymmetrical Reconfigurable Field-Effect Transistor, IEEE Transactions on Electron Devices, 2020,67(4),1894-1901(43) Junya Sun, Xiaojin Li, Yabin Sun, and Yanling Shi, Impact of Geometry, Doping, Temperature, and Boundary Conductivity on Thermal Characteristics of 14-nm Bulk and SOI FinFETs, IEEETransactions on Device and Materials Reliability, 2020, 20(1), 119-127(42) Yan Yao, Yabin Sun, Xiaojin Li, Yanling Shi et.al, Novel Reconfigurable Field-effect Transistor with Asymmetric Spacer Engineering at Drain Side, IEEE Transactions on Electron Devices, 2020, 67(2),751-757--------------------------------------------- 2019 ----------------------------------------------------(41) Yabin Sun, Ziyu Liu, Jun Fu, Yanling Shi, Xiaojin Li, Degradation and annealing characteristics of NPN SiGe HBT exposed to heavy ions irradiation, Radiation Physics and Chemistry 165 (2019) 108433 (40) Qin Huang, Renhua Liu, Yabin Sun, Xiaojin Li, Yanling Shi, Changfeng Wang, Duanquan Liao, Ming Tian, Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs, SCIENCE CHINA Information Sciences, 2019 (62), 069407:1~069407:3 (39) Yabin Sun, Ziyu Liu, Xiaojin Li, Yanling Shi, Distributed Small-signal Equivalent Circuit Model and Parameter Extraction for SiGe HBT,IEEE Access, 2019(7), 5865~5873 --------------------------------------------- 2018 ----------------------------------------------------(38) Jian Qin, Yabin Sun, Analytical Low Frequency AC NBTI Compact Modeling with H2 Locking and Electron Fast Capture and Emission, Journal of Electronic Testing:Theory and Applications, 2018, 34(5), 599-605 (37) Junya Sun, Renhua Liu, Xiaojin Li, Yabin Sun, and Yanling Shi, Self-Heating Effects Investigation on Nanoscale FinFET and Its Thermal Resistance Modeling, 2018 IEEE 14th International Conference on Solid-Sate and Integrated Circuit Technology(ICSICT), 2018.10.31~2018.11.03(36) Zhen Zhou, Yabin Sun, Xiaojin Li and Yanling Shi, Impact of channel and spacer engineering on DC and RF performance of Gate-all- around FET，2018 IEEE 14th International Conference on Solid-Sate and Integrated Circuit Technology(ICSICT), 2018.10.31~2018.11.03 (35) Yue Zhuo, Yabin Sun, Xiaojin Li and Yanling Shi, Statistical Variability Analysis in Vertically Stacked Gate All Around FETs at 7 nm Technology，2018 IEEE 14th International Conference on Solid-Sate and Integrated Circuit Technology(ICSICT), 2018.10.31~2018.11.03 (34) Xiaojin Li*,Jian Qing,Yabin Sun, Yan Zeng, Yanling Shi and Yuheng Wang, Analytical Layout Dependent NBTI Degradation Modeling Based on Non-Uniformly Distributed Interface Traps, IEEE Transactions on Device and Materials Reliability 2018, 18(3), 397-403(33) Xiaojin Li*, Jian Qing,Yabin Sun,Yan Zeng, Yanling Shi and Yuheng Wang, Linear and Resolution Adjusted On-chip Aging Detecting of NBTI Degradation, IEEE Transactions on Device and Materials Reliability, 2018, 18(3), 383-390 (32) Yabin Sun, Ziyu Liu Jun Fu, Xiaojin Li, Yanling Shi, Investigation of Total Dose Effects in SiGe HBTs under Different Exposure Conditions, Radiation Physics and chemistry, 2018(151), 84-89 (31) Yabin Sun,Ziyu Liu, Xiaojin Li, Jiaqi Ren, Fanglin Zheng, and Yanling Shi,Analytical Gate Fringe Capacitance Model for Nanoscale MOSFET with Layout Dependent Effect and Process Variations, Journal of Physics D: Applied Physics, 2018(51), 275104(30) Muyang Qin, Yabin Sun, Xiaojin Li and Yanling Shi, Analytical Parameter Extraction for Small- Signal Equivalent Circuit of 3D FinFET into Sub-THz Range, IEEE Access, 2018(6), 19752-19761 --------------------------------------------- 2017 ----------------------------------------------------(29) Yabin Sun, Weili Xu, Xiaohong Fu, Zihan Sun, Junyong Wang, et.al., Evaluation of lattice dynamics, infrared optical properties and visible emissions of hexagonal GeO2 films prepared by liquid phase deposition, Journal of Materials Chemistry C, 2017(5), 12792--1279(28) Chengsheng Liu, Fanglin Zheng, Yabin Sun*, Xiaojin Li* and Yanling Shi, Highly Flexible SRAM Cells Based on Novel Tri-Independent-Gate FinFET, Superlattices and Microstructures 110(2017) 330-338(27) Yan Zeng, Xiaojin Li*, Yabin Sun*, Yanling Shi, Ao Guo, Shaojian Hu, Jian Qing, Detailed Study of NBTI Characterization in 40-nm CMOS Process Using Comprehensive Models, Chin. Phys. B Vol.26, No. 10 (2017) 108503 (26) Yabin Sun, Xiaojin Li*, Jinzhong Zhang* and Yanling Shi, Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout, Chin. Phys. B Vol. 26, No. 9 (2017) 098502(25) Chengsheng Liu, Fanglin Zheng, Yabin Sun*, Xiaojin Li*, Yanling Shi, Novel tri-independent-gate FinFET for multi-current modes control, Superlattices and Microstructures Vol.109 (2017) 374-381(24) Yabin Sun, Jun Fu, Yudong Wang, Wei Zhou, Xiaojin Li, and Yanling Shi, Novel Method to Determine Base Resistance in SiGe HBT from Small-Signal S-Parameters, Microwave and Optical Technology Letters, 59(3), 555-560, Mar. 2017(23) Fanglin Zheng, Chengsheng Liu, Jiaqi Ren, Yanling Shi, Yabin Sun, Xiaojin Li*, Analytical capacitance model for 14 nm FinFET considering dual-k spacer, Chin. Phys. B Vol. 26, No. 7 (2017) 077303(22) Yan Zeng, Xiaojin Li, Yanling Wang, Yabin Sun, Yanling Shi, Ao Guo, et.al, Analytical long-term NBTI recovery model with slowing diffusivity and locking effect of hydrogen considered, Microelectronics Reliability, 75(2017) 20-26 --------------------------------------------- 2016 ----------------------------------------------------(21) Yabin Sun, Jun Fu, Yudong Wang, Wei Zhou, Zhihong Liu, Xiaojin Li, Yanling Shi, Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT, Microelectronics Reliability, 65, 41-46, Oct. 2016(20) Yabin Sun*, Jun Fu, Yudong Wang, Wei Zhou, Xiaojin Li, Yanling Shi, In-suit investigation of DC characteristics degradation in SiGe HBT included by halogen lamp irradiation, Superlattices and Microstructures, 98, 62~69, Oct. 2016(19) Yabin Sun, Jun Fu, Yudong Wang, Wei Zhou, Wei Zhang, Zhihong Liu, Direct analytical parameter extraction for SiGe HBTs T-topology small-signal equivalent circuit, Superlattices and Microstructures, 94, 223~230, Apr. 2016(18) Jiaqi Ren, Lijie Sun, Fanglin Zheng,Yabin Sun*, Xiaojin Li, Yanling Shi, Gate-to-source/drain Fringing Capacitance Model with Process Variation of MOSFET in 40nm Generation, 2016 IEEE 13th International Conference on Solid-State and Integrated Circuit Technology, Hangzhou, China, Oct. 2016, 808-810 (17) Yabin Sun, Jun Fu, Jun Xu et.al, Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model, Chin. Phys. B, 25(4), 048501, Apr. 2016(16) Jun Zhang, Yufeng Guo*, Yabin Sun, Kemeng Yang, Hong Lin, Xiaojuan Xia, Changchun Zhang, A new physical insight of RESURF effects based on gradual charge appointment concept for Bulk Silicon Lateral Power Devices, Superlattices and Microstructures, 92, 111~123, Apr. 2016 --------------------------------------- Before 2015-----------------------------------------------(15) Yabin Sun, Jun Fu, Ji Yang, Jun Xu, Yudong Wang, Wei Zhou, Jie Cui, Gaoqing Li, Zhihong Liu, An Improved Small-Signal Model for SiGe HBT Under Off-state, Derived from Distributed Network and Corresponding Model Parameter Extraction, IEEE Transactions on Microwave Theory and Techniques, 63(10), 3131-3141, Oct. 2015(14) Yabin Sun, Jun Fu, Ji Yang, Jun Xu, Yudong Wang, Wei Zhou, Jie Cui, Gaoqing Li, Zhihong Liu et.al,Novel analytical parameters extraction for SiGe HBTs bansed on the rational function fitting, Superlattices and Microstructure, 80, 11–19, Apr. 2015(13) Yabin Sun, Jun Fu, Ji Yang, Jun Xu, Yudong Wang, Wei Zhou, Jie Cui, Gaoqing Li, Zhihong Liu,Impact of bias conditions on performance degradation in SiGe HBTs irradiated by 10MeV Br ion, Microelectronics Reliability, 54, 2728–2734, Dec. 2014(12) Yabin Sun, Jun Fu, Ji Yang, Jun Xu, Yudong Wang, Wei Zhou, Jie Cui, Gaoqing Li, Zhihong Liu,Comparison of total dose effects on SiGe HBT induced by different swift heavy ions irradiation for space application, Chin. Phys. B, Vol. 23, No. 11, 116104, Nov. 2014(11) Yabin Sun, Jun Fu, Ji Yang, Jun Xu, Yudong Wang, Wei Zhou, Jie Cui, Gaoqing Li, Zhihong Liu, Novel method to determine base resistance in SiGe HBT HICUM based on rational function fitting, 2014 IEEE 12th International Conference on Solid-States and Integrated Circuit Technology, Oct. 2014(10) Yabin Sun, Jun Fu, Ji Yang, Jun Xu, Yudong Wang, Wei Zhou, Jie Cui, Gaoqing Li, Zhihong Liu, Degradation differences in the forward and reverse current gain of 25MeV Si ion irradiated SiGe HBTs, Physica B- Condensed Matter, 449 (2014) 186–192, Sep. 2014(9) Ji Yang, Jun Fu, Yabin Sun, Yudong Wang, Wei Zhou, Jie Cui, Gaoqing Li, Novel extraction of emitter resistance of SiGe HBTs from forward-Gummel measurements, 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Jul. 2014(8) Yabin Sun, Jun Fu, Ji Yang, Jun Xu, Yudong Wang, Wei Zhou, Jie Cui, Gaoqing Li, Zhihong Liu, Bias dependence of ionizing radiation damage in SiGe HBTs at different dose dates, Physica B- Condensed Matter, 434, 95–100, Feb. 2014(7) Yabin Sun, Jun Fu, Ji Yang, Jun Xu, Yudong Wang, Wei Zhou, Jie Cui, Gaoqing Li, Zhihong Liu, Investigation of bias dependence on enhanced low dose rate sensitivity in SiGe HBTs for space application, Nuclear Instruments and Methods in Physics Research A, 738, 82–86, Feb. 2014(6) Yabin Sun, Jun Fu, Ji Yang, Jun Xu, Yudong Wang, Wei Zhou, A Comparison of 10MeV Chlorine and 20MeV Bromine Ion Irradiation Effects on SiGe HBTs for Space Application, 2013 IEEE International Semiconductor Device Research Symposium (ISDRS), Dec. 2013(5) Yabin Sun, Jun Fu, Ji Yang, Jun Xu, Yudong Wang, Wei Zhou, Irradiation Effects of 25MeV Silicon Ions on SiGe Heterojunction Bipolar Transistors, Nuclear Instruments and Methods in Physics Research B, 312, 77–83, Oct. 2013(4) Yabin Sun, Jun Fu, Jun Xu, Yudong Wang, Wei Zhou, Wei Zhang, Jie Cui, Gaoqing Li, Zhihong Liu, Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rate, Acta Phys. Sin. Vol. 62, No. 19, 196104, Oct. 2013(3) Yabin Sun, Jun Fu, Ji Yang, Jun Xu, Yudong Wang, Wei Zhou, The Reliability of SiGe HBT under Swift Heavy Ion Irradiation, 2013 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Jun. 2013(2) Yabin Sun, Jun Fu, Ji Yang, Jun Xu, Yudong Wang, Wei Zhou, A Single-event transient induced by pulsed laser in silicon–germanium heterojunction bipolar transistor, Chin. Phys. B, Vol. 22, No. 5 (2013) 05610, May. 2013(1) Yabin Sun, Jun Fu, Ji Yang, Jun Xu, Yudong Wang, Wei Zhou, The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors, Radiation Effects & Defects in Solids, Vol. 168, No. 4, 253–263, Apr. 2013
