个人简历

许磊，河南省教育厅学术技术带头人，河南省高校青年骨干教师。主持国家自然科学基金面上项目等，在ACS Applied Materials & Interfaces、IEEEElectron Device Letters、Applied Physics Letters、IEEE Transactions on Electron Devices等权威期刊上发表SCI文章20余篇，获得发明专利2项。
个人学习经历
1996-2000年，河南大学物理学专业，理学学士学位
2004-2006年，武汉大学微电子学与固体电子学专业，工学硕士学位
2009-2015年，武汉大学微电子学与固体电子学专业，工学博士学位
承担的教学任务
主讲电子材料与元器件等课程。
承担的科研项目
1. 金属元素与氢共掺杂下氧化锌薄膜缺陷调控研究及器件研制（基金号11574083），国家自然科学基金面上项目，主持。
2、B位离子对二维三角磁铁多铁性调控与机制研究（基金号U1804125）,国家自然科学基金联合项目，参与。
3. 高性能不含铟的非晶ZnSnO基薄膜晶体管研制（2015GGJS-103），河南省高校青年骨干教师资助计划项目，主持。

研究领域

薄膜电子器件及光电探测应用""

近期论文

1. Abliz,A.; Xu, L.; Wan, D.; Duan, H.; Wang, J.; Wang, C.; Luo, S.; Liu, C., Effects ofyttrium doping on the electrical performances and stability of ZnO thin-filmtransistors. Applied Surface Science 2019, 475, 565-570.
2. Abliz,A.; Wan, D.; Yang, L.; Mamat, M.; Chen, H.; Xu, L.; Wang, C.; Duan, H.,Investigation on the electrical performances and stability of W-doped ZnOthin-film transistors. Materials Science in Semiconductor Processing 2019, 95,54-58.
3. Li,G.; Abliz, A.; Xu, L.; Andre, N.; Liu, X.; Zeng, Y.; Flandre, D.; Liao, L.,Understanding hydrogen and nitrogen doping on active defects in amorphousIn-Ga-Zn-O thin film transistors. Applied Physics Letters 2018, 112 (25).
4. Abliz,A.; Wan, D.; Chen, J.-Y.; Xu, L.; He, J.; Yang, Y.; Duan, H.; Liu, C.; Jiang,C.; Chen, H.; Guo, T.; Liao, L., Enhanced Reliability of In-Ga-ZnO Thin-FilmTransistors Through Design of Dual Passivation Layers. IEEE Transactions onElectron Devices 2018, 65 (7), 2844-2849.
5. Abliz,A.; Gao, Q.; Wan, D.; Liu, X.; Xu, L.; Liu, C.; Jiang, C.; Li, X.; Chen, H.;Guo, T.; Li, J.; Liao, L., Effects of Nitrogen and Hydrogen Codoping on theElectrical Performance and Reliability of InGaZnO Thin -Film Transistors. AcsApplied Materials & Interfaces 2017, 9 (12), 10798-10804.
6. Xu,L.; Chen, Q.; Liao, L.; Liu, X.; Chang, T.-C.; Chang, K.-C.; Tsai, T.-M.;Jiang, C.; Wang, J.; Li, J., Rational Hydrogenation for Enhanced Mobility andHigh Reliability on ZnO-based Thin Film Transistors: From Simulation toExperiment. Acs Applied Materials & Interfaces 2016, 8 (8), 5408-5415.
7. Wan,D.; Liu, X.; Xu, L.; Liu, C.; Xiao, X.; Guo, S.; Liao, L., The Study forSolution-Processed Alkali Metal-Doped Indium-Zinc Oxide Thin-Film Transistors. IEEEElectron Device Letters 2016, 37 (1), 50-52.
8. Abliz,A.; Wang, J.; Xu, L.; Wan, D.; Liao, L.; Ye, C.; Liu, C.; Jiang, C.; Chen, H.;Guo, T., Boost up the electrical performance of InGaZnO thin film transistorsby inserting an ultrathin InGaZnO:H layer. Applied Physics Letters 2016, 108(21).
9. Abliz,A.; Huang, C.-W.; Wang, J.; Xu, L.; Liao, L.; Xiao, X.; Wu, W.-W.; Fan, Z.;Jiang, C.; Li, J.; Guo, S.; Liu, C.; Guo, T., Rational Design of ZnO:H/ZnOBilayer Structure for High-Performance Thin-Film Transistors. Acs AppliedMaterials & Interfaces 2016, 8 (12), 7862-7868.
10. Zhang,Z.; Zou, X.; Xu, L.; Liao, L.; Liu, W.; Ho, J.; Xiao, X.; Jiang, C.; Li, J.,Hydrogen gas sensor based on metal oxide nanoparticles decorated graphenetransistor. Nanoscale 2015, 7 (22), 10078-10084.
11. Xu,L.; Huang, C.-W.; Abliz, A.; Hua, Y.; Liao, L.; Wu, W.-W.; Xiao, X.; Jiang, C.;Liu, W.; Li, J., The different roles of contact materials between oxidationinterlayer and doping effect for high performance ZnO thin film transistors. Applied Physics Letters 2015, 106 (5).
12. Wang,J.; Zou, X.; Xiao, X.; Xu, L.; Wang, C.; Jiang, C.; Ho, J. C.; Wang, T.; Li,J.; Liao, L., Floating Gate Memory-based Monolayer MoS2 Transistor with MetalNanocrystals Embedded in the Gate Dielectrics. Small 2015, 11 (2), 208-213.
13. Li,Z.; Xu, L.; Abliz, A.; Hua, Y.; Li, J.; Shi, Y.; Liu, W.; Liao, L., ElectricalProperties in Group IV Elements-Doped ZnO Thin-Film Transistors. Journal ofDisplay Technology 2015, 11 (8), 670-673.
14. Xu,L.; Li, Z.; Liu, X.; Wang, J.; Xiao, X.; Jiang, C.; Liu, Y.; Chen, W.; Li, J.;Liao, L., Tunable Electrical Properties in High-Valent Transition-Metal-DopedZnO Thin-Film Transistors. IEEE Electron Device Letters 2014, 35 (7), 759-761.