代天军，男，汉族，1987年出生，毕业于电子科技大学电子薄膜与集成器件国家重点实验室，曾参研多项国家重点研究项目，目前在电子与通信工程学院从事教学与科研工作，在研项目1项。近五年来在Journal of Alloys and Compounds, Nanophotonics，Journal of Materials Science，IEEE Electron Device Letters等国内外知名期刊上发表论文12篇，其中以第一作者身份发表SCI论文5篇。
研究领域
二维半导体薄膜及其器件应用，集成电路设计""
近期论文
1. T.J. Dai, et al. Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition [J]. Journal of Electronic Materials, 2018, 47: 6709-6715.2. T.J. Dai, et al. Layer-controlled synthesis of wafer-scale MoSe2 nanosheets for photodetector arrays [J]. Journal of Materials Science, 2018, 53: 8436-8444.3. T.J. Dai, et al. Synthesis of Few-Layer 2H-MoSe2 Thin Films with Wafer-level Homogeneity for High-Performance Photodetector [J], Nanophotonics, 2018, 7: 1959–1969.4. T.J. Dai, et al. High performance photodetectors constructed on atomically thin few-layer MoSe2 synthesized using atomic layer deposition and a chemical vapor deposition chamber [J], Journal of Alloys and Compounds, 2019, 785: 951-957.5. T.J. Dai, et al. Two-Dimensional MoSe2/Graphene Heterostructure Thin Film with Wafer-Scale continuity via Van der Waals Epitaxy [J], Chemical Physics Letters, 2020, 755: 137762.6. Y.X. Ren, T.J. Dai, et al. Fabrication of lead selenide thin film photodiode for near-infrared detection via O-2-plasma treatment [J], Journal of Alloys and Compounds, 2018, 753(15):6-10.7. Y.X. Ren, T.J. Dai, et al. Fabrication of High-Gain Photodetector With Graphene–PbSe Heterostructure [J]. IEEE Electron Device Letters, 2019, 40:48-50.
