个人简历

孙文红，学习经历
1984.9-1988.7，兰州大学物理系学士
1988.9-1991.7，兰州大学物理系硕士
1991.8-1996.7，兰州大学物理系博士
工作经历：
2017.4-现在广西大学物理技术与工程学院,教授（八桂学者）
2006.5-2017.3SensorElectronicTechnology,Inc.,研发部主任
2002.3-2006.5UniversityofSouthCarolina,副教授，ResearchFellow
2000.8-2002.3IMRE(Singapore),ResearchFellow
1991.9-1996.8电子工业部第十三研究所,高级工程师，工程师主持（或参与）的主要科研项目光电信息研究中心建设（T312009721-杰出人才,八桂学者配套专项)
八桂学者人才项目（T3120099202,自制区人才项目）授权专利：
1.US9722139B2:“Non-UniformMultipleQuantumWellStructure”,2017.
2.USpatent2013/0193480:“EpitaxyTechniqueforReducingThreadingDislocationsinStressedSemiconductorCompounds”,2017.
3.USpatent9105792:“PatternedLayerDesignforGroupIIINitrideLayerGrowth”,2015.
4.USpatent9831382B2:“EpitaxyTechniqueforGrowingSemiconductorCompounds”,2017.
5.USpatent9330906,“STRESSRELIEVINGSEMICONDUCTORLAYER”,2016.
6.USpatent9537054B2“SEMICONDUCTORSTRUCTUREWITHREDUCEDBOWINGANDINCREASEDRELIABILITY”,2017.

研究领域

宽禁带半导体材料与器件

近期论文

1.MaxShatalov,WenhongSun,RakeshJain,AlexLunev,XuhongHu,AlexDobrinsky,YuriBilenko,JinweiYang,GregoryGarrett,MichaelWraback,MichaelShur,andRemisGaska,“HighPowerAlGaNUltravioletLightEmitters”,Semicond.Sci.Technol.29,084007(2014).
2.M.Shatalov,W.Sun,A.Lunev,X.Hu,A.Dobrinsky,Y.Bilenko,J.Yang,M.Shur,R.Gaska,C.Moe,G.Garrett,M.Wraback,“AlGaNDeep-UltravioletLight-EmittingDiodeswithExternalQuantumEfficiencyabove10%”,Appl.Phys.Express5,082101(2012).
3.W.Sun*,M.Shatalov,J.Deng,X.Hu,J.Yang,A.Lunev,Y.Bilenko,M.Shur,andR.Gaska,“EfficiencyDroopin245-247nmAlGaNLight-EmittingDiodeswithContinuousWave2mWOutputPower”,Appl.Phys.Lett.96,061102(2010).
4.W.H.Sun*,J.P.Zhang,J.W.Yang,H.P.Maruska,M.A.Khan,R.Liu,andF.A.Ponce,“FineStructureofAlN/AlGaNSuperlatticeGrownbyPulseAtomicLayerEpitaxyfordislocationfiltering”,Appl.Phys.Lett.87,211915(2005).
5.W.H.Sun*,J.W.Yang,J.P.Zhang,M.E.Gaevski,C.Q.Chen,J.W.Li,Z.Gong,M.Su,andM.AsifKhan,“n-Al0.75Ga0.25NEpilayersfor250nmEmissionUltravioletLightEmittingDiodes”,Phys.Stat.Sol.(c)2,2083(2005).
6.W.H.Sun,J.P.Zhang,V.Adivarahan,A.Chitnis,M.Shatalov,S.Rai,S.WuV.Mandavilli,J.W.Yang,andM.A.Khan,“AlGaNBased280nmLight-EmittingDiodeswithcontinuouswavepowersinexcessof1.5mW”,Appl.Phys.Lett.85,531(2004).
7.W.H.Sun,V.Adivarahan,M.Shatalov,Y.B.Lee,S.Wu,J.W.Yang,andM.A.Khan,“ContinuousWaveMilliwattPowerAlGaNLightEmittingDiodesat280nm”,JPNJ.Appl.Phys.43,L1419(2004).
8.W.H.Sun*,J.W.Yang,C.Q.Chen,J.P.Zhang,M.E.Gaevski,E.Kuokstis,V.Adivarahan,H.M.Wang,Z.Gong,M.Su,andM.AsifKhan,“GaN/AlGaNmultiplequantumwellsona-planeGaNpillarsforstripe-geometrynonpolarultravioletlight-emittingdevices”,Appl.Phys.Lett.83,2599(2003).
9.W.H.Sun*,E.Kuokstis,M.Gaevski,J.P.Zhang,C.Q.Chen,H.M.Wang,J.W.Yang,G.Simin,M.AsifKhan,R.Gaska,andM.S.Shur,“Strongultravioletemissionfromnon-polarAlGaN/GaNquantumwellsgrownoverr-planesapphiresubstrates”,Phys.Stat.Sol.(a)200,48(2003).
10.W.H.Sun*,S.J.Chua,L.S.Wang,andX.H.Zhang,“OutgoingmultiphononresonantRamanscatteringandluminescenceinBe-andC-implantedGaN”,J.Appl.Phys.91,4917(2002).
11.W.H.Sun,J.C.Zhang,L.Dai,K.M.Chen,andG.G.Qin.“Gamma-rayirradiationeffectsonFouriertransforminfraredgrazingincidencereflection-absorptionspectraoftheGaNfilms”,J.Phys.:Condens.Matter.13,5931(2001).
12.W.H.Sun,S.T.Wang,J.C.Zhang,K.M.Chen,G.G.Qin,Y.Z.Tong,Z.J.Yang,G.Y.Zhang,Y.M.Pu,Q.L.Zhang,\