个人简历

指导学科
门类：工学
一级学科：材料科学与工程（可授工学、理学学位）
个人简介
2012.09-2016.06 武汉大学物理科学与技术学院 微电子科学与工程 本科
2016.09-2021.06 武汉大学物理科学与技术学院 材料物理与化学 工学博士
2021.07- 广西大学资源环境与材料学院 助理教授

主持（参与）的主要科研项目
广西大学引进高层次人才科研启动项目，40万，在研，主持
二维层状材料及其异质器件集成，重大研究计划，在研，参与
磁性二维材料、异质结的可控制备及其新型量子器件，面上项目，在研，参与
招生信息
1. 材料科学与工程，学术型硕士研究生，资源环境与材料学院
2. 材料工程，专业型硕士研究生，资源环境与材料学院

研究领域

1. 低维半导体场效应晶体管的异质集成
2. 基于低维半导体的新型量子器件""

近期论文

共发表SCI论文15篇，其中第一作者或共同第一作者6篇（#表示共同第一作者）
1. Huang H, Jiang B, Zou X, Zhao X, Liao L*. Black phosphorus electronics. Science Bulletin. 2019;64(15):1067-79. (SCI一区，IF=11.780)
2. Huang H, Liu X, Liu F, Liu C, Liang X, Zhang Z, et al. Comprehensive insights into effect of van der Waals contact on carbon nanotube network field-effect transistors. Applied Physics Letters. 2019;115(17):173503. (SCI二区，IF= 3.791)
3. Huang H#, Guan H#, Su M, Zhang X, Liu Y, Liu C, et al. Gate-tunable linear magnetoresistance in molybdenum disulfide field-effect transistors with graphene insertion layer. Nano Research. 2021, 14(6):1814-1818. (SCI一区，IF=8.897)
4. Huang H, Wang L, Lv Y, Zou X, Liu X, et al. High-Performance WSe₂ n-Type Field-Effect Transistors Enabled by InOₓ Damage-Free Doping. IEEE Electron Device Letters. 2021;42(7):1081-1084. (SCI二区，IF=4.187)
5. Jiang B#, Huang H#, Chen R, Li G, Flandre D, Wan D, et al. Black phosphorus field effect transistors stable in harsh conditions via surface engineering. Applied Physics Letters. 2020;117(11):111602. (SCI二区，IF=3.791)
6. Wan D#, Huang H#, Wang Z, Liu X, Liao L. Recent advances in long-term stable black phosphorus transistors. Nanoscale. 2020;12(39):20089-99. (SCI二区，IF=7.790)
7. Zou X, Xu J, Huang H, et al. A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2. Nanotechnology, 2018, 29(24): 245201. (SCI二区，IF=3.874)
8. Guan H, Tang N, Huang H, et al. Inversion symmetry breaking induced valley Hall effect in multilayer WSe2. ACS nano, 2019, 13(8): 9325-9331. (SCI一区，IF=15.881)
9. Yang Z, Hong H, Liu F, et al. High‐performance photoinduced memory with ultrafast charge transfer based on MoS2/SWCNTs network van der waals heterostructure. Small, 2019, 15(3): 1804661. (SCI一区，IF=13.281)
10. Yang G, Shao Y, Niu J, et al. Possible luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals. Nature communications, 2020, 11(1): 1-7. (SCI一区，IF=14.919)
11. Zhao X, Yin Q, Huang H, et al. Van der Waals epitaxy of ultrathin crystalline PbTe nanosheets with high near-infrared photoelectric response. Nano Research, 2021, 14: 1955-1960. (SCI一区，IF=8.897)
12. Zhu X, Lin F, Zhang Z, et al. Enhancing performance of a GaAs/AlGaAs/GaAs nanowire photodetector based on the two-dimensional electron–hole tube structure. Nano letters, 2020, 20(4): 2654-2659. (SCI一区，IF=11.189)
13. Wan D, Jiang B, Huang H, et al. High voltage gain WSe2 complementary compact inverter with buried gate for local doping. IEEE Electron Device Letters, 2020, 41(6): 944-947. (SCI二区，IF=4.187)
14. Wang Y, Zhong F, Wang H, et al. Photogating-controlled ZnO photodetector response for visible to near-infrared light. Nanotechnology, 2020, 31(33): 335204. (SCI二区，IF=3.874)
15. Wan D, Wang Q, Huang H, et al. Hysteresis-free MoS2 metal semiconductor field-effect transistors with van der Waals Schottky junction. Nanotechnology, 2021, 32(13): 135201. (SCI二区，IF=3.874)